Abstract: A resistive memory comprises a tunnel barrier. The tunnel barrier is in contact with a memory material which has a memory property that can be changed by a write signal. Because of the exponential dependence of the tunnel resistance on the parameters of the tunnel barrier, a change in the memory property has a powerful effect on the tunnel resistance, whereby the information stored in the memory material can be read. A solid electrolyte (ion conductor), for example, is suitable as a memory layer, wherein the ions thereof can be moved relative to the interface with the tunnel barrier by the write signal. The memory layer, however, can also be, for example, a further tunnel barrier, the tunnel resistance of which can be changed by the write signal, for example by displacement of a metal layer present in this tunnel barrier. The invention further provides a method for storing and reading information to and from a memory.

Abstract: Disclosed is a triple-gate or multi-gate component based on the quantum mechanical tunnel effect. The component comprises at least two tunneling electrodes on a substrate that are separated by a gap through which electrons can tunnel. The component comprises an arrangement for applying an electric field to the gap, which is such that the path of an electron tunneling between the tunneling electrodes is elongated as a result of the deflection caused by this field. In general, an arrangement can also be provided for applying an electric field to the gap, this electric field having a field component that is perpendicular to the direction of the tunnel current between the tunneling electrodes and is parallel to the substrate. Since the tunnel current between the tunneling electrodes exponentially depends on the distance traveled by the electrons in the gap, such an electric field has a penetration effect on the tunneling probability and thus on the tunnel current to be controlled.

Abstract: A resistive memory comprises a tunnel barrier. The tunnel barrier is in contact with a memory material which has a memory property that can be changed by a write signal. Because of the exponential dependence of the tunnel resistance on the parameters of the tunnel barrier, a change in the memory property has a powerful effect on the tunnel resistance, whereby the information stored in the memory material can be read. A solid electrolyte (ion conductor), for example, is suitable as a memory layer, wherein the ions thereof can be moved relative to the interface with the tunnel barrier by the write signal. The memory layer, however, can also be, for example, a further tunnel barrier, the tunnel resistance of which can be changed by the write signal, for example by displacement of a metal layer present in this tunnel barrier. The invention further provides a method for storing and reading information to and from a memory.

Abstract: The invention relates to a memory element comprised of an electrode (2), of a ferroelectric layer (3), which is adjacent thereto, of a layer (4), which is made of a non-ferroelectric material and which is adjacent to said ferroelectric layer (3), and of an electrode (5), which is made of a non-ferroelectric material and which is adjacent to layer (4). The electric resistance of the ferroelectric layer and of the non-ferroelectric layer are preferably low. The invention also relates to a method for electronically storing information by writing an item of information into a memory element of the aforementioned type by aligning a polarization in a polarizable layer, and the information is read by determining the polarizing direction by measuring resistance. This renders a particularly fast remanent storage of electronic data possible.

Abstract: Disclosed is a method for producing a magnetic tunnel contact. A metal layer is disposed on a first ferromagnetic layer (1) and is oxidised for producing an insulation layer (3). A second ferromagnetic layer (2) is produced on the insulation layer (3), whereby oxidation of the metal layer is supported by UV-light.

Abstract: The invention relates to an assembly for measuring a magnetic field, comprising at least a first layer assembly (8) and at least a second layer assembly (10), whereby the first layer assembly (8) and the second layer assembly (10) have a hard magnetic layer (16), a layer (18) which acts as a tunnel barrier and lies adjacent to the hard magnetic layer and a soft magnetic layer (20) which lies adjacent to the layer (18) which acts as a tunnel barrier. The layer assemblies (8, 10) are located in a bridge circuit for determining the electric resistance. The invention is characterized in that the second layer assembly (10) also has an electrically conductive anti-ferromagnetic layer (22) lying adjacent to the soft magnetic layer (20), or an electrically conductive artificial anti-ferromagnet lying adjacent to said soft magnetic layer (20). The invention also relates to a method for producing the inventive assembly.

Abstract: The invention relates to an assembly for measuring a magnetic field, comprising at least a first layer assembly (8) and at least a second layer assembly (10), whereby the first layer assembly (8) and the second layer assembly (10) have a hard magnetic layer (16), a layer (18) which acts as a tunnel barrier and lies adjacent to the hard magnetic layer and a soft magnetic layer (20) which lies adjacent to the layer (18) which acts as a tunnel barrier. The layer assemblies (8, 10) are located in a bridge circuit for determining the electric resistance. The invention is characterized in that the second layer assembly (10) also has an electrically conductive anti-ferromagnetic layer (22) lying adjacent to the soft magnetic layer (20), or an electrically conductive artificial anti-ferromagnet lying adjacent to said soft magnetic layer (20). The invention also relates to a method for producing the inventive assembly.