Abstract: The present invention relates to a process for preparing graphene, comprising (i) providing in a chemical deposition chamber a substrate which has a surface S1, (ii) subjecting the substrate to a thermal pre-treatment while feeding at least one gaseous or supercritical oxidant into the chemical deposition chamber so as to bring the surface S1 into contact with the at least one gaseous or supercritical oxidant and obtain a pre-treated surface S2, (iii) preparing graphene on the pre-treated surface S2 by chemical deposition.

Abstract: The present invention relates to the use of an amine precursor of formula I (X1—R1)n—NH(3-n) (I) or its ammonium salts for depositing a graphene film having a nitrogen content of from 0 to 65% by weight on a substrate S1 by chemical vapor deposition (CVD), wherein R1 is selected from (a) C1 to C10 alkanediyl, which may all optionally be interrupted by at least one of O, NH and NR2, (b) alkenediyl, which may all optionally be interrupted by at least one of O, NH and NR2, (c) alkynediyl, which may all optionally be interrupted by at least one of O, NH and NR2, (d) C6 to C20 aromatic divalent moiety, and (e) CO and CH2CO, X1 is selected from H, OH, OR2, NH2, NHR2, or NR22, wherein two groups X1 may together form a bivalent group X2 being selected from a chemical bond, O, NH, or NR2, R2 is selected from C1 to C10 alkyl and a C6 to C20 aromatic moiety which may optionally be substituted by one or more substituents X1, n is 1, 2, or 3.