Patents by Inventor Hermann Willhelm Wendt

Hermann Willhelm Wendt has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of patterning insulating layers using etching techniques that compensate for etch rate variations
    Patent number: 8058176
    Abstract: Methods of forming integrated circuit devices include forming an integrated circuit substrate having an electrically insulating layer thereon and forming a mask layer pattern having at least first and second openings of different size therein, on the electrically insulating layer. First and second portions of the electrically insulating layer extending opposite the first and second openings, respectively, are simultaneously etched at first and second different etch rates. This etching yields a first trench extending adjacent the first opening that is deeper than a second trench extending adjacent the second opening. Then, the bottoms of the first and second trenches are simultaneously etched to substantially the same depths using an etching process that compensates for the first and second different etch rates.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: November 15, 2011
    Assignees: Samsung Electronics Co., Ltd., International Business Machines Corproation, Advanced Micro Devices Corporation, Chartered Semiconductor Manufacturing Ltd., Infineon Technologies AG
    Inventors: Wan-jae Park, Kaushik Arun Kumar, Joseph Edward Linville, Anthony David Lisi, Ravi Prakash Srivastava, Hermann Willhelm Wendt
  • Methods of Patterning Insulating Layers Using Etching Techniques that Compensate for Etch Rate Variations
    Publication number: 20090081873
    Abstract: Methods of forming integrated circuit devices include forming an integrated circuit substrate having an electrically insulating layer thereon and forming a mask layer pattern having at least first and second openings of different size therein, on the electrically insulating layer. First and second portions of the electrically insulating layer extending opposite the first and second openings, respectively, are simultaneously etched at first and second different etch rates. This etching yields a first trench extending adjacent the first opening that is deeper than a second trench extending adjacent the second opening. Then, the bottoms of the first and second trenches are simultaneously etched to substantially the same depths using an etching process that compensates for the first and second different etch rates.
    Type: Application
    Filed: September 26, 2007
    Publication date: March 26, 2009
    Inventors: Wan-jae Park, Kaushik Arun Kumar, Joseph Edward Linville, Anthony David Lisi, Ravi Prakash Srivastava, Hermann Willhelm Wendt