Abstract: An electronic switch with a switching element of the type of a semiconductor switch with the mode of operation of at least one FET, so that due to the technology it also has an internal body diode in inverse operation. A control circuit for executing the operating commands is set up so that gate in inverse operation receives such a voltage that the body diode is still currentless. In addition, a functional unit of the control circuit is set up to cause the switching element to assume the ON conducting state as a function of a commutation voltage or a commutation current, i.e., in inverse operation.

Abstract: Method and device for generating bit information in a subscriber station of a bus system, in particular of the bus of the EIBA, essentially symmetrical AC voltage information being superposed as bit information on a DC voltage of the bus in that a DC voltage potential (19) of a line under inductive loading (9) is pulled, in each case in an active pulse (20) to the potential of another line and an equalizing pulse (22, 23) is formed with subsequent energy recovery. It is provided that the active pulse (20) of the bit information at a bit frequency is formed from individual pulses (17) of higher frequency.

Abstract: A solid-state switching element that works with at least one semiconductor region or a pair of antiserially arranged semiconductor regions having characteristic curves similar to those of FETs. An internal body diode in inverse operation is also provided. In addition to having a drain and a gate, each of the semiconductor regions has two source electrodes, with several cells combined with the electrodes in cell design. One source serves as a load current electrode, called a load source, and the other source is available as a gate electrode, called a control source. The effective semiconductor region of the load source is larger than the effective semiconductor region of the control source.