Patents by Inventor Herong ZHENG

Herong ZHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150308237
    Abstract: The present disclosure provides a managed pressure drilling (MPD) system and methods for assessing and optimizing. For example, reliability models such as Failure Modes and Effects Analysis (FMEA), Fault Tree Analysis (FTA), Ishikawa diagram, Pareto chart, Reliability Block Diagram (RBD) are used in assessing the system reliability. The MPD drilling system is suitable for offshore drilling operations.
    Type: Application
    Filed: April 29, 2014
    Publication date: October 29, 2015
    Applicants: Sinopec Tech Houston, LLC., China Petroleum & Chemical Corporation
    Inventors: Sheng ZHAN, Jinhai ZHAO, Herong ZHENG, Weiping XU
  • Publication number: 20150308191
    Abstract: The present disclosure provides methods and systems for monitoring a drilling system, including methods and systems for estimating the life consumption of downhole drilling tools. The system employs a plurality of sensors that provide sensor signals related to the status of components in the drilling system. The sensor signals are analyzed using Functional Principal Component Analysis (FPCA) to give estimations for one or more performance metrics, including the life consumption of downhole drilling tools.
    Type: Application
    Filed: April 29, 2014
    Publication date: October 29, 2015
    Applicants: Sinopec Tech Houston, LLC., China Petroleum & Chemical Corporation
    Inventors: Sheng ZHAN, Jinhai ZHAO, Herong ZHENG, Weiping XU
  • Publication number: 20150313010
    Abstract: The present disclosure provides the printed circuit board assembly suitable for operating downhole at high temperatures. The printed circuit board assembly has a ceramic circuit board with a plurality of chips installed on it. At least one of the chips has an aluminum nitride or a silicon nitride substrate. In some of the chips, aluminum nitride is used as the oxide layer in a Si-on-Insulator configuration. In other chips, integrated circuits are fabricated on a substrate made from aluminum nitride, silicon nitride, silicon carbide, or sapphire.
    Type: Application
    Filed: April 29, 2014
    Publication date: October 29, 2015
    Applicants: SINOPEC TECH HOUSTON, LLC., CHINA PETROLEUM & CHEMICAL CORPORATION
    Inventors: Sheng ZHAN, Jinhai ZHAO, Herong ZHENG, Weiping XU