Patents by Inventor Hertbert Schafer

Hertbert Schafer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-frequency bipolar transistor and method for the production thereof
    Publication number: 20060038258
    Abstract: A high-frequency bipolar transistor includes an emitter contact adjoining an emitter connection region, a base contact adjoining a base connection region, and a collector contact adjoining a collector connection region. A first insulation layer is disposed on the base connection region. The collector connection region contains a buried layer, which connects the collector contact to a collector zone. A silicide or salicide region is provided on the buried layer and connects the collector contact to the collector zone in a low-impedance manner. A second insulation layer is disposed on the collector connection region but not on the silicide region.
    Type: Application
    Filed: October 20, 2005
    Publication date: February 23, 2006
    Inventors: Josef Bock, Thomas Meister, Reinhard Stengl, Hertbert Schafer