Abstract: A method and article of manufacture are disclosed comprising substantially increasing the electrical activation and mobility of electrons in a III-V semiconductor material containing minor amounts of oxygen by doping a III-V crystalline material with an n-type dopant and adding or implanting an oxygen reactive element in the III-V material where the doses of dopant and implanted oxygen reactive element are low enough to effect this increase. These doses typically do not exceed about 1E13 cm.sup.-2 and 4.5E12 cm.sup.-2 respecitvely. The added or implanted oxygen reactive element preferably is at a dose less than the n-type dopant. Experimental data indicate that the added or implanted oxygen reactive element acts as a gettering agent to form an oxygen depleted zone between dopant and oxygen reactive element regions.

Abstract: The electrode structure comprises in each section three parallel microbands of identical width, the first and second microband covering first and second optical guides respectively and being separated by a width giving to the propagating line which they form a characteristic impedance equal to the required adaptation impedance; the third microband is far enough away from the second band for the contribution of the former to such characteristic impedance to be negligible. The covering of the first and second optical guides by the first and second microbands alternates from one section to the next section and the passage from a first section to a second section is obtained by a transition zone comprising inclined microbands.