Patents by Inventor Herve Blanck

Herve Blanck has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor with high electron mobility and inhomogeneous layer resistance of the guide channel
    Patent number: 8587032
    Abstract: For an HEMT component, in particular on the basis of GaN, it is proposed, for the purpose of reducing field spikes in the conduction channel, in a partial section of the conduction channel between gate electrode and drain electrode, to set the sheet resistance of the conduction channel such that it is higher than in adjacent regions. Various measures for subsequently increasing the sheet resistance in an area-selective manner are specified.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: November 19, 2013
    Assignee: United Monolithic Semiconductors GmbH
    Inventors: Helmut Jung, Hervé Blanck
  • TRANSISTOR WITH HIGH ELECTRON MOBILITY AND INHOMOGENEOUS LAYER RESISTANCE OF THE GUIDE CHANNEL
    Publication number: 20130049071
    Abstract: For an HEMT component, in particular on the basis of GaN, it is proposed, for the purpose of reducing field spikes in the conduction channel, in a partial section of the conduction channel between gate electrode and drain electrode, to set the sheet resistance of the conduction channel such that it is higher than in adjacent regions. Various measures for subsequently increasing the sheet resistance in an area-selective manner are specified.
    Type: Application
    Filed: May 12, 2011
    Publication date: February 28, 2013
    Applicant: UNITED MONOLITHIC SEMICONDUCTORS GMBH
    Inventors: Helmut Jung, Hervé Blanck
  • Semiconductor component with integrated heat sink
    Patent number: 5719433
    Abstract: A semiconductor component that could be a power transistor type of component comprises mesa-structured elementary bipolar transistors. This component has a thick, metal heat sink of which a part (PI) takes the form of a bridge and a part is in contact with the substrate. The legs of the bridge lie on the entire unit constituted by the mesas. The heat sink made on the front face of the substrate may be connected to the rear face of the substrate comprising a ground plate. The discharging of the heat is thus appreciably fostered.
    Type: Grant
    Filed: July 25, 1996
    Date of Patent: February 17, 1998
    Assignee: Thomson-CSF
    Inventors: Sylvain Delage, Simone Cassette, Herve Blanck, Eric Chartier
  • Bipolar transistor with optimized structure
    Patent number: 5668388
    Abstract: A bipolar transistor in which the emitter possesses a double "mesa" structure so as to achieve the maximum avoidance of the phenomena of electron/hole recombinations that have a deleterious effect on the current gain. The double mesa emitter can be made out of an alternation of materials M.sub.I /M.sub.II having different types of behavior with respect to a pair of etching methods. These materials may be GaInP and GaAs.
    Type: Grant
    Filed: July 5, 1996
    Date of Patent: September 16, 1997
    Assignee: Thomson-CSF
    Inventors: Sylvain Delage, Marie-Antoinette Poisson, Christian Brylinski, Herve Blanck
  • Method for the etching of a heterostructure of materials of the III-V group
    Patent number: 5411632
    Abstract: Disclosed is a method for the etching of at least two layers of semiconductor materials having different natures, with a view to making a mesa for the self-alignment of the metallizations of a transistor. The heterojunction must comprise a first layer of a material containing As, which is etched by reactive ion etching, and a second layer of a material containing P which is etched chemically. Application to the making of HBT type vertical heterojunction transistors.
    Type: Grant
    Filed: November 5, 1993
    Date of Patent: May 2, 1995
    Assignee: Thomson-CSF
    Inventors: Sylvain Delage, Herve Blanck, Simone Cassette