Abstract: A microcircuit integrating a waveguide with a rectangular cross-section, the microcircuit including a first chip and a second chip assembled on each other, the waveguide being located in a junction zone between chips and extending in parallel to the chips, the waveguide including a first conductive plate located on the side of the first chip and parallel to the first chip, and a second conductive plate, located on the side of the second chip and parallel to the second chip, the waveguide being laterally delimited on one and the other side of the waveguide by one or more electrical connecting elements electrically connecting the first chip to the second chip.

Abstract: The present invention relates to a method for producing an element of a microelectronic device on a support comprising a base layer, an inserted layer and a covering layer. The method includes forming a confinement volume including an etching of the inserted layer selectively to the base layer and to the covering layer, and filling, by a filling material constituting the element, of at least one part of the confinement volume by an epitaxial growth of the material from the side wall. The formation of the confinement volume comprises a formation of a hole through the whole thickness of the covering layer, and the etching is an anisotropic etching done by applying an etching on the inserted layer through the hole.

Abstract: The present invention relates to a method for producing an element of a microelectronic device on a support comprising a base layer, an inserted layer and a covering layer. The method includes forming a confinement volume including an etching of the inserted layer selectively to the base layer and to the covering layer, and filling, by a filling material constituting the element, of at least one part of the confinement volume by an epitaxial growth of the material from the side wall. The formation of the confinement volume comprises a formation of a hole through the whole thickness of the covering layer, and the etching is an anisotropic etching done by applying an etching on the inserted layer through the hole.

Abstract: The invention pertains to a method for manufacturing a microelectronic device on a substrate comprising at least one first electrical component and one second electrical component distributed respectively in first and second levels stacked one on top of the other on the substrate, this method comprising: the manufacture of at least one first arm and one second arm of different lengths, each of these arms directly and mechanically linking an electrical pad to a fixed anchoring point on the substrate, and the electrical pad is made inside the first level and then shifted, prior to the electrical connection of the second component, to a position of connection wherein the upper face of the electrical pad is in contact with the interior of the second level parallel to the substrate.

Abstract: The invention pertains to a method for manufacturing a microelectronic device on a substrate comprising at least one first electrical component and one second electrical component distributed respectively in first and second levels stacked one on top of the other on the substrate, this method comprising: the manufacture of at least one first arm and one second arm of different lengths, each of these arms directly and mechanically linking an electrical pad to a fixed anchoring point on the substrate, and the electrical pad is made inside the first level and then shifted, prior to the electrical connection of the second component, to a position of connection wherein the upper face of the electrical pad is in contact with the interior of the second level parallel to the substrate.