Abstract: An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a rotatable diffracting element prior to imaging it by a sensor and converting it into an electrical signal. The resulting image changes depending on the rotational positioning of the grating. The diffracted image is inspected to identify, localize and classify faulty devices within the DUT.

Abstract: A method for emission testing of a semiconductor device (DUT), by mounting the DUT onto an test bench of an emission tester, the emission tester having an optical detector; electrically connecting the DUT to an electrical tester; applying electrical test signals to the DUT while keeping test parameters constant; inserting an optical filters into an optical path of the emission tester and collecting emission test signal from the optical detector; removing the filter from the optical path and collecting emission test signal from the optical detector. Comparing the images obtained with and without the filter. The filter may be shortpass to obtain emission signal, a bandpass for detecting forward bias, or longpass to obtain thermal signal.

Abstract: An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a rotatable diffracting element prior to imaging it by a sensor and converting it into an electrical signal. The resulting image changes depending on the rotational positioning of the grating. The diffracted image is inspected to identify, localize and classify faulty devices within the DUT.

Abstract: An IR camera is used to image an IC to identify hot spots. The objective of the IR camera is removed and laser optics are inserted into the optical axis of the system. A laser is then used to ablate the encapsulation in a defined area around the optical axis. The IR camera operates in a lock-in mode to obtain phase information of the IR signal from the IC. The phase information is used to obtain a depth estimate of the defect. Predetermined etch rates are then used in conjunction with the depth estimate to generate a timed end-point for the laser ablation.

Abstract: An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a rotatable diffracting element prior to imaging it by a sensor and converting it into an electrical signal. The resulting image changes depending on the rotational positioning of the grating. The diffracted image is inspected to identify, localize and classify faulty devices within the DUT.

Abstract: An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a transparent diffracting grating prior to imaging it by a sensor and converting it into an electrical signal. The resulting image includes the zero order and first order diffraction of the grating. The grating is configured such that the zero order is in registration with emission sites imaged when the grating is outside the optical path.

Abstract: A method for emission testing of a semiconductor device (DUT), by mounting the DUT onto an test bench of an emission tester, the emission tester having an optical detector; electrically connecting the DUT to an electrical tester; applying electrical test signals to the DUT while keeping test parameters constant; serially inserting one of a plurality of shortpass filters into an optical path of the emission tester and collecting emission test signal from the optical detector until all available shortpass filters have been inserted into the optical path; determining appropriate shortpass filter providing highest signal to noise ratio of the emission signal; inserting the appropriate shortpass filter into the optical path; and, performing emission testing on the DUT.

Abstract: An IR camera is used to image an IC to identify hot spots. The objective of the IR camera is removed and laser optics are inserted into the optical axis of the system. A laser is then used to ablate the encapsulation in a defined area around the optical axis. The IR camera operates in a lock-in mode to obtain phase information of the IR signal from the IC. The phase information is used to obtain a depth estimate of the defect. Predetermined etch rates are then used in conjunction with the depth estimate to generate a timed end-point for the laser ablation.

Abstract: A method for emission testing of a semiconductor device (DUT), by mounting the DUT onto an test bench of an emission tester, the emission tester having an optical detector; electrically connecting the DUT to an electrical tester; applying electrical test signals to the DUT while keeping test parameters constant; inserting an optical filters into an optical path of the emission tester and collecting emission test signal from the optical detector; removing the filter from the optical path and collecting emission test signal from the optical detector. Comparing the images obtained with and without the filter. The filter may be shortpass to obtain emission signal, a bandpass for detecting forward bias, or longpass to obtain thermal signal.

Abstract: A non-destructive approach for the 3D localization of buried hot spots in electronic device architectures by use of Lock-in Thermography (LIT). The 3D analysis is based on the principles of thermal wave propagation through different material layers and the resulting phase shift/thermal time delay. With more complex multi level stacked die architectures it is necessary to acquire multiple LIT results at different excitation frequencies for precise hot spot depth localization. Additionally, the use of multiple time-resolved thermal waveforms, measured in a minimized field of view on top of the hot spot location, can be used to speed up the data acquisition. The shape of the resulting waveforms can be analyzed to further increase the detection accuracy and confidence level.

Abstract: Controlled amount of heat is injected into a stacked die using a light beam, and the propagated heat is measuring with LIT camera from the other side of the die. The thermal image obtained can be characterized so that it can be used to calibrate the phase shift from a given stack layer, or can be used to identify defects in the stacked die. The process can be repeated for each die in the stack to generate a reference for future testing. The thermal image can be investigated to detect faults, such as voids in vias, e.g., TSV.

Abstract: An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a transparent diffracting grating prior to imaging it by a sensor and converting it into an electrical signal. The resulting image includes the zero order and first order diffraction of the grating. The grating is configured such that the zero order is in registration with emission sites imaged when the grating is outside the optical path.

Abstract: An apparatus and method for optical probing of a DUT is disclosed. The system enables identifying, localizing and classifying faulty devices within the DUT. A selected area of the DUT is imaged while the DUT is receiving test signals, which may be static or dynamic, i.e., causing certain of the active devices to modulate. Light from the DUT is collected and is passed through a rotatable diffracting element prior to imaging it by a sensor and converting it into an electrical signal. The resulting image changes depending on the rotational positioning of the grating. The diffracted image is inspected to identify, localize and classify faulty devices within the DUT.

Abstract: Controlled amount of heat is injected into a stacked die using a light beam, and the propagated heat is measuring with LIT camera from the other side of the die. The thermal image obtained can be characterized so that it can be used to calibrate the phase shift from a given stack layer, or can be used to identify defects in the stacked die. The process can be repeated for each die in the stack to generate a reference for future testing. The thermal image can be investigated to detect faults, such as voids in vias, e.g., TSV.

Abstract: Controlled amount of heat is injected into a stacked die using a light beam, and the propagated heat is measuring with LIT camera from the other side of the die. The thermal image obtained can be characterized so that it can be used to calibrate the phase shift from a given stack layer, or can be used to identify defects in the stacked die. The process can be repeated for each die in the stack to generate a reference for future testing. The thermal image can be investigated to detect faults, such as voids in vias, e.g., TSV.

Abstract: A method for emission testing of a semiconductor device (DUT), by mounting the DUT onto an test bench of an emission tester, the emission tester having an optical detector; electrically connecting the DUT to an electrical tester; applying electrical test signals to the DUT while keeping test parameters constant; serially inserting one of a plurality of shortpass filters into an optical path of the emission tester and collecting emission test signal from the optical detector until all available shortpass filters have been inserted into the optical path; determining appropriate shortpass filter providing highest signal to noise ratio of the emission signal; inserting the appropriate shortpass filter into the optical path; and, performing emission testing on the DUT.

Abstract: A non-destructive approach for the 3D localization of buried hot spots in electronic device architectures by use of Lock-in Thermography (LIT). The 3D analysis is based on the principles of thermal wave propagation through different material layers and the resulting phase shift/thermal time delay. With more complex multi level stacked die architectures it is necessary to acquire multiple LIT results at different excitation frequencies for precise hot spot depth localization. Additionally, the use of multiple time-resolved thermal waveforms, measured in a minimized field of view on top of the hot spot location, can be used to speed up the data acquisition. The shape of the resulting waveforms can be analyzed to further increase the detection accuracy and confidence level.

Abstract: Controlled amount of heat is injected into a stacked die using a light beam, and the propagated heat is measuring with LIT camera from the other side of the die. The thermal image obtained can be characterized so that it can be used to calibrate the phase shift from a given stack layer, or can be used to identify defects in the stacked die. The process can be repeated for each die in the stack to generate a reference for future testing. The thermal image can be investigated to detect faults, such as voids in vias, e.g., TSV.

Abstract: An optical detector is disclosed, having a plurality of detector cells, each detector cell comprising a light sensor, a charge accumulator, and a switch interposed between the light sensor and the charge accumulator; wherein the light sensor produces electrical current when illuminated by electromagnetic radiation, the charge accumulator accumulate electric charge when receiving the electrical current generated by the light sensor, and the switch is configured to controllably electrically isolate or connect the charge accumulator to light sensor, such that the charge accumulator accumulates charge only when electrically connected by the switch to the light sensor.

Abstract: A non-destructive approach for the 3D localization of buried hot spots in electronic device architectures by use of Lock-in Thermography (LIT). The 3D analysis is based on the principles of thermal wave propagation through different material layers and the resulting phase shift/thermal time delay. With more complex multi level stacked die architectures it is necessary to acquire multiple LIT results at different excitation frequencies for precise hot spot depth localization. Additionally, the use of multiple time-resolved thermal waveforms, measured in a minimized field of view on top of the hot spot location, can be used to speed up the data acquisition. The shape of the resulting waveforms can be analyzed to further increase the detection accuracy and confidence level.