Abstract: An energy-efficient capacitance-to-digital converter (CDC) is provided that utilizes a capacitance-domain successive approximation (SAR) technique. Unlike SAR analog-to-digital converters (ADCs), analysis shows that for SAR CDCs, the comparator offset voltage will result in signal-dependent and parasitic-dependent conversion errors, which necessitates an op-amp-based implementation. The inverter-based SAR CDC contemplated herein provides robust, energy-efficient, and fast operation. The inverter-based SAR CDC may include a hybrid coarse-fine programmable capacitor array. The design of example embodiments is insensitive to analog references, and thus achieves very low temperature sensitivity without the need for calibration. Moreover, this design achieves improved energy efficiency.

Abstract: An energy-efficient capacitance-to-digital converter (CDC) is provided that utilizes a capacitance-domain successive approximation (SAR) technique. Unlike SAR analog-to-digital converters (ADCs), analysis shows that for SAR CDCs, the comparator offset voltage will result in signal-dependent and parasitic-dependent conversion errors, which necessitates an op-amp-based implementation. The inverter-based SAR CDC contemplated herein provides robust, energy-efficient, and fast operation. The inverter-based SAR CDC may include a hybrid coarse-fine programmable capacitor array. The design of example embodiments is insensitive to analog references, and thus achieves very low temperature sensitivity without the need for calibration. Moreover, this design achieves improved energy efficiency.

Abstract: Methods are provided for mitigating problems caused by sneak-paths current during memory cell access in gateless arrays. Example methods contemplated herein utilize adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer memory system to address this sneak-paths problem. The method of the invention is a method for reading a target memory cell located at an intersection of a target row of a gateless array and a target column of the gateless array, the method comprising: —reading a value of the target memory cell; and—calculating an actual value of the target memory cell based on the read value of the memory cell and a component of the read value caused by sneak path current. Utilizing either an “initial bits” strategy or a “dummy bits” strategy in order to calculate the component of the read value caused by sneak path current, example embodiments significantly reduce the number of memory accesses pixel for an array readout.

Abstract: A method for readout of a gated memristor array, a memristor array readout circuit and method of fabrication thereof are provided. In the context of the method, the method includes selecting a row of a memristor array associated with a desired cell, measuring the value of the selected memristor row, and selecting a column of a memristor array associated with the desired cell. The selection of the column and selection of the row selects the desired cell. The method also includes measuring the value of the memristor selected row with the selected desired cell and determining the value of the desired cell based on the value of the selected memristor row and the value of the selected memristor row with the selected desired cell.

Abstract: An energy-efficient capacitance-to-digital converter (CDC) is provided that utilizes a capacitance-domain successive approximation (SAR) technique. Unlike SAR analog-to-digital converters (ADCs), analysis shows that for SAR CDCs, the comparator offset voltage will result in signal-dependent and parasitic-dependent conversion errors, which necessitates an op-amp-based implementation. The inverter-based SAR CDC contemplated herein provides robust, energy-efficient, and fast operation. The inverter-based SAR CDC may include a hybrid coarse-fine programmable capacitor array. The design of example embodiments is insensitive to analog references, and thus achieves very low temperature sensitivity without the need for calibration. Moreover, this design achieves improved energy efficiency.

Abstract: Methods are provided for mitigating problems caused by sneak-paths current during memory cell access in gateless arrays. Example methods contemplated herein utilize adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer memory system to address this sneak-paths problem. The method of the invention is a method for reading a target memory cell located at an intersection of a target row of a gateless array and a target column of the gateless array, the method comprising: —reading a value of the target memory cell; and —calculating an actual value of the target memory cell based on the read value of the memory cell and a component of the read value caused by sneak path current. Utilizing either an “initial bits” strategy or a “dummy bits” strategy in order to calculate the component of the read value caused by sneak path current, example embodiments significantly reduce the number of memory accesses pixel for an array readout.

Abstract: A gas sensor using a metal organic framework material can be fully integrated with related circuitry on a single substrate. In an on-chip application, the gas sensor can result in an area-efficient fully integrated gas sensor solution. In one aspect, a gas sensor can include a first gas sensing region including a first pair of electrodes, and a first gas sensitive material proximate to the first pair of electrodes, wherein the first gas sensitive material includes a first metal organic framework material.

Abstract: A method for readout of a gated memristor array, a memristor array readout circuit and method of fabrication thereof are provided. In the context of the method, the method includes selecting a row of a memristor array associated with a desired cell, measuring the value of the selected memristor row, and selecting a column of a memristor array associated with the desired cell. The selection of the column and selection of the row selects the desired cell. The method also includes measuring the value of the memristor selected row with the selected desired cell and determining the value of the desired cell based on the value of the selected memristor row and the value of the selected memristor row with the selected desired cell.

Abstract: A memristor-based oscillator can be fully implemented without any reactance element.

Abstract: A gas sensor using a metal organic framework material can be fully integrated with related circuitry on a single substrate. In an on-chip application, the gas sensor can result in an area-efficient fully integrated gas sensor solution. In one aspect, a gas sensor can include a first gas sensing region including a first pair of electrodes, and a first gas sensitive material proximate to the first pair of electrodes, wherein the first gas sensitive material includes a first metal organic framework material.

Abstract: A memristor-based oscillator can be fully implemented without any reactance element.