Abstract: A metal nitride oxide semiconductor (MNOS) memory device having improved memory retention capability is described. Improved memory retention is obtained by ion implanting a non-doping material, such as argon or nitrogen, or a low concentration of an N type dopant, such as phosphorus, into the oxide before depositing the nitride layer. It is believed that the ion implantation results in a nitride-oxide interface conducive to charge storage. The MNOS device produced has a considerably improved memory retention characteristic when compared with an MNOS device which did not have the ion implantation.

Abstract: A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.

Abstract: A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.

Abstract: A protection device for integrated circuits used on television sets is described which protects the devices against damage of the type caused by kinescope arcing.The protection device described comprises a diode having a first region of the same conductivity type as the emitter region of the protected bipolar transistor and a second region of opposite conductivity type to the first region which second region contacts only the collector of the protected transistor. An electrode contacts the first region of the diode over a much larger area than the area the same electrode makes contact to the emitter of the protected bipolar transistor in order to allow large transient currents to go to ground through the diode rather than through the transistor thereby protecting the transistor from destruction due to transient discharges.

Abstract: A monolithic semiconductor device including a resistor comprising a first region of one type conductivity, has means for controllably establishing the value of the resistor comprising two additional regions of the opposite type conductivity disposed respectively on opposite sides of the conductive path of the resistor, whereby the width of the resistor is defined by the extent of the additional regions into the first region. Where the monolithic semiconductor device comprises an integrated circuit device including a lateral transistor, the additional regions may be formed simultaneously with the emitter and collector regions of the transistor while utilizing the same doping mask, whereby any variation in the base width of the transistor is made proportional to the variation in the width of the resistor.

Abstract: A monolithic semiconductor device including a resistor comprising a first region of one type conductivity, has means for controllably establishing the value of the resistor comprising two additional regions of the opposite type conductivity disposed respectively on opposite sides of the conductive path of the resistor, whereby the width of the resistor is defined by the extent of the additional regions into the first region. Where the monolithic semiconductor device comprises an integrated circuit device including a lateral transistor, the additional regions may be formed simultaneously with the emitter and collector regions of the transistor while utilizing the same doping mask, whereby any variation in the base width of the transistor is made proportional to the variation in the width of the resistor.

Abstract: A plastic-packaged semiconductor device includes a semiconductor chip with a hermetic passivation and metallization system, including silicon nitride passivation and noble metal interconnection conductors. The device is highly resistant to degradation in the presence of water vapor and corrosive atmospheres.