Abstract: SRAM devices and methods of fabricating the same are disclosed, by which a process margin and a degree of device integration are enhanced by reducing the number of contact holes of an SRAM device unit cell using local interconnections. A disclosed example device includes first and second load elements; first and second drive transistors; a common gate electrode connected in one body to a gate electrode of the first load element and a gate electrode of the first drive transistor to apply a sync signal to the gate electrodes; the common gate electrode overlapping with a junction layer of the second load element and a junction layer region of the second drive transistor; the common gate electrode being electrically connected to an upper line via a plug in one contact hole.

Abstract: A method of fabricating a semiconductor device uses selective epitaxial growth (SEG), by which leakage current generation is minimized using lateral SEG growth in case a contact intrudes a shallow track isolation feature. The method includes steps of forming a sidewall spacer on a gate, selectively growing an epitaxial layer in a lateral direction relative to the sidewall spacer and the gate, and forming a contact on the epitaxial layer.

Abstract: Methods of forming a device isolation layer in a semiconductor substrate are disclosed. A disclosed method includes: forming a trench in a field area of a semiconductor substrate, growing a SiON layer on an inside of the trench by annealing in an ambience of NO gas, and filling the trench with a trench-fill material.