Abstract: Methods of manufacturing a semiconductor device including a multi-layer of dielectric layers may include forming a metal oxide layer on a semiconductor substrate and forming a multi-layer of silicate layers including metal atoms and silicon atoms, on the metal oxide layer. The multi-layer of silicate layers may include at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer.

Abstract: Methods of manufacturing a semiconductor device including a multi-layer of dielectric layers may include forming a metal oxide layer on a semiconductor substrate and forming a multi-layer of silicate layers including metal atoms and silicon atoms, on the metal oxide layer. The multi-layer of silicate layers may include at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer.

Abstract: A wafer treatment apparatus includes a wafer heating device having a wafer-load region at an upper portion, a shower head opposing the wafer-load region for ejecting/directing a source gas toward the wafer surface, and a reflecting apparatus positioned between the shower head and the heating device for reflecting thermal energy radiated from the heating device back toward the wafer-load region. The reflecting apparatus includes a reflector positioned above and opposing the wafer-load region, and a supporter for supporting the reflector. The reflector may have a flattened reflecting surface facing toward the wafer-load region, or may be a semi-spherical type reflector having a concave mirror facing toward the wafer-load region. The reflector can be controlled to move vertically relative to the wafer.

Abstract: A wafer treatment apparatus includes a wafer heating device having a wafer-load region at an upper portion, a shower head opposing the wafer-load region for ejecting/directing a source gas toward the wafer surface, and a reflecting apparatus positioned between the shower head and the heating device for reflecting thermal energy radiated from the heating device back toward the wafer-load region. The reflecting apparatus includes a reflector positioned above and opposing the wafer-load region, and a supporter for supporting the reflector. The reflector may have a flattened reflecting surface facing toward the wafer-load region, or may be a semi-spherical type reflector having a concave mirror facing toward the wafer-load region. The reflector can be controlled to move vertically relative to the wafer.