Abstract: Provided herein is a TSV measuring interferometer that uses a variable field stop that adjusts such that a light is focused at an inlet and at a bottom surface of a TSV when measuring a diameter and depth of the TSV, thereby reducing a measurement time and result data, the interferometer also using a telecentric lens that adjusts the light injected into the TSV to be a straight line, so as to obtain a sufficient amount of light reaching the bottom surface to improve the accuracy of measurement even in a TSV having a large aspect ratio.

Abstract: Provided herein is a TSV measuring interferometer that uses a variable field stop that adjusts such that a light is focused at an inlet and at a bottom surface of a TSV when measuring a diameter and depth of the TSV, thereby reducing a measurement time and result data, the interferometer also using a telecentric lens that adjusts the light injected into the TSV to be a straight line, so as to obtain a sufficient amount of light reaching the bottom surface to improve the accuracy of measurement even in a TSV having a large aspect ratio.

Abstract: A plasma monitoring device includes a plasma supplier including a power supply, a reaction gas supply line, and an emission nozzle for emitting plasma, which is generated therein, toward an object; a camera unit for obtaining an image of the plasma emission state; and a controller for obtaining a measurement value by converting pixel information of the image into a numerical value and comparing it with a reference value, which is a measurement value in a normal emission state, to check the plasma emission state. The camera unit obtains an image of the plasma emission state, and the controller analyzes the image to obtain a measurement value, which is used to monitor the state of plasma in real time and control the amount of reaction gas supplied to the plasma supplier and the plasma discharge condition, so that plasma is evenly emitted from the plasma supplier.

Abstract: A plasma monitoring device includes a plasma supplier including a power supply, a reaction gas supply line, and an emission nozzle for emitting plasma, which is generated therein, toward an object; a camera unit for obtaining an image of the plasma emission state; and a controller for obtaining a measurement value by converting pixel information of the image into a numerical value and comparing it with a reference value, which is a measurement value in a normal emission state, to check the plasma emission state. The camera unit obtains an image of the plasma emission state, and the controller analyzes the image to obtain a measurement value, which is used to monitor the state of plasma in real time and control the amount of reaction gas supplied to the plasma supplier and the plasma discharge condition, so that plasma is evenly emitted from the plasma supplier.

Abstract: Disclosed is a system and a method for detecting and repairing alien materials on a semiconductor wafer. The system includes a transfer arm for transferring and aligning a wafer, an inspection unit, on which the wafer is seated, and which obtains an image of the wafer surface, an analysis module for analyzing the alien material appearing in the image obtained by the inspection unit, and a repair unit for repairing the alien material according to information regarding the analyzed alien material. The simple construction of the system and method for detecting and repairing alien materials on a wafer reduces the manufacturing cost, avoids the loss of manufacturing cost, and increases the semiconductor chip yield ratio.

Abstract: Disclosed is a laser processing device for processing a surface of an object with laser beams. The laser processing device includes: a laser beam generating unit for projecting laser beams; and a micromirror device having a plurality of micromirrors, the micromirrors being configured to reflect and transfer at least a part of laser beams projected from the laser beam generating unit to the surface of the object in a pattern for processing the surface of the object in a desired shape. The micromirrors of the micromirror device are capable of selectively switching the light path of the laser beams projected from the laser beam generating unit. According to the present invention, a surface of an object can be either two-dimensionally or three-dimensionally processed in a desired shape with laser beams.