Abstract: A semiconductor device includes an active pattern extending in a first direction, a plurality of gate structures on the active pattern spaced in the first direction, and including a gate electrode extending in a second direction, a source/drain pattern between adjacent gate structures, a silicide mask pattern on the source/drain pattern, an upper surface of the silicide mask pattern being lower than an upper surface of the gate electrode, a source/drain contact on the source/drain pattern connected to the source/drain pattern, and a contact silicide film between the source/drain contact and the source/drain pattern in contact with a bottom surface of the silicide mask pattern, wherein a height from a lowermost part of the source/drain pattern to a lowermost part of the source/drain contact is smaller than a height from the lowermost part of the source/drain pattern to the bottom surface of the silicide mask pattern.

Abstract: The present invention relates to a safe driving guide system using a Global Positioning System (GPS), which informs a driver of unexpected conditions when the unexpected conditions occur on roads throughout the nation, prevents operational errors from being generated even though location-specific road condition information is indicated between a road being traveled and some other road at the time of driving a vehicle, and provides a means for detecting a sudden start, a sudden stop, sudden deceleration or sudden acceleration in the case where the vehicle suddenly starts, stops, decelerates or accelerates, respectively, thus enabling the driver to safely drive the vehicle.