Abstract: In a bonding configuration for a semiconductor device package, the bonding angles of the bonding wires are maintained within acceptable limits, without causing an increase in the chip die size, and without necessitating the use of the corner rule. In this manner, the occurrence of shorting between adjacent bonding wires can be mitigated or eliminated, and device net die count during fabrication can be increased.

Abstract: A semiconductor wafer includes a plurality of passive device units, which are electrically connected across scribe lines. Passive device chips in the wafer that are adjacent to one another in a first direction are electrically connected in parallel, while passive device units adjacent to one another in a second direction are connected in series. By selecting a number of adjacent passive device units extending in the first and second direction, and separating the selected units from the wafer along the corresponding scribe lines, a passive device chip having a desired electrical characteristic (e.g., capacitance or resistance) can be obtained. Such passive device chips may be assembled in a semiconductor package where they are electrically connected to active devices.