Abstract: A flexible display device includes: a first flexible substrate and a second flexible substrate facing each other; a display part positioned on a surface of the first flexible substrate facing the second flexible substrate and including a plurality of thin film transistors and a plurality of light emitting elements; a color filter positioned on a surface of the second flexible substrate facing the first flexible substrate; an overcoat layer positioned between the display part and the color filter and covering the color filter; a gas barrier layer positioned between the display part and the overcoat layer and covering the overcoat layer; and an encapsulation part including a filler positioned between the display part and the gas barrier layer, and a sealant positioned at an outside of the filler, and an area of the gas barrier layer is larger than an area of the encapsulation part.

Abstract: A flexible display device includes: a first flexible substrate and a second flexible substrate facing each other; a display part positioned on a surface of the first flexible substrate facing the second flexible substrate and including a plurality of thin film transistors and a plurality of light emitting elements; a color filter positioned on a surface of the second flexible substrate facing the first flexible substrate; an overcoat layer positioned between the display part and the color filter and covering the color filter; a gas barrier layer positioned between the display part and the overcoat layer and covering the overcoat layer; and an encapsulation part including a filler positioned between the display part and the gas barrier layer, and a sealant positioned at an outside of the filler, and an area of the gas barrier layer is larger than an area of the encapsulation part.

Abstract: A flexible display device includes: a first flexible substrate and a second flexible substrate facing each other; a display part positioned on a surface of the first flexible substrate facing the second flexible substrate and including a plurality of thin film transistors and a plurality of light emitting elements; a color filter positioned on a surface of the second flexible substrate facing the first flexible substrate; an overcoat layer positioned between the display part and the color filter and covering the color filter; a gas barrier layer positioned between the display part and the overcoat layer and covering the overcoat layer; and an encapsulation part including a filler positioned between the display part and the gas barrier layer, and a sealant positioned at an outside of the filler, and an area of the gas barrier layer is larger than an area of the encapsulation part.

Abstract: A flexible display device includes: a first flexible substrate and a second flexible substrate facing each other; a display part positioned on a surface of the first flexible substrate facing the second flexible substrate and including a plurality of thin film transistors and a plurality of light emitting elements; a color filter positioned on a surface of the second flexible substrate facing the first flexible substrate; an overcoat layer positioned between the display part and the color filter and covering the color filter; a gas barrier layer positioned between the display part and the overcoat layer and covering the overcoat layer; and an encapsulation part including a filler positioned between the display part and the gas barrier layer, and a sealant positioned at an outside of the filler, and an area of the gas barrier layer is larger than an area of the encapsulation part.

Abstract: A photoelectric device includes: a semiconductor substrate including monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed on the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon.

Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.

Abstract: Method of manufacturing a photovoltaic device and a photovoltaic device manufactured by using the method. The method includes forming a first conductive-type semiconductor layer using a first impurity on a semiconductor substrate, performing doping on a region of the first conductive-type semiconductor layer using a laser such that the region of the first conductive-type semiconductor layer has a higher concentration of the first impurity than a remaining portion of the first conductive-type semiconductor layer, performing edge isolation to form a groove portion at an edge portion of a rear surface of the semiconductor substrate, forming an antireflection layer on a front surface of the semiconductor substrate, forming a first metal electrode on the front surface of the semiconductor substrate, and forming a second metal electrode and a second conductive-type semiconductor layer including a second impurity that is different from the first impurity, on the rear surface of the semiconductor substrate.

Abstract: A method of manufacturing a solar cell includes preparing a base substrate having a first conductive type; diffusing an impurity having a second conductive type (opposite the first conductive type) into the base substrate to form an emitter layer having a first impurity concentration on the base substrate and a by-product layer on the emitter layer; irradiating a laser beam onto the emitter layer corresponding to a first region of the base substrate to form a front contact portion having a second impurity concentration higher than the first impurity concentration; irradiating the laser beam onto the by-product layer to remove the by-product layer corresponding to the first region; removing the by-product layer from an area outside of the first region; forming an anti-reflection layer on the base substrate; forming a front electrode on the anti-reflection layer corresponding to the first region; and forming a back electrode on the base substrate.

Abstract: A method for manufacturing a solar cell is presented. The method includes: forming an amorphous silicon layer on a first surface of a light absorbing layer; doping the amorphous silicon layer with a dopant; forming a dopant layer by diffusing the dopant into the amorphous silicon layer with a laser; forming a semiconductor layer by removing the dopant that remains outside the dopant layer; etching the surface of the semiconductor layer by using an etchant; forming a first electrode on the semiconductor layer; and forming a second electrode on a second surface of the light absorbing layer.