Patents by Inventor Heung S. Kim

Heung S. Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8618888
    Abstract: An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate an output signal oscillating at a frequency in response to a first control signal and a second control signal. The second circuit may be configured to generate the second control signal in response to (i) an input voltage and (ii) the output signal. The second circuit (i) generates the second control signal by comparing a peak voltage of the output signal to the input voltage and (ii) adjusts an amplitude of the control signal in response to the comparison.
    Type: Grant
    Filed: July 14, 2009
    Date of Patent: December 31, 2013
    Assignee: LSI Corporation
    Inventor: Heung S. Kim
  • Patent number: 8513987
    Abstract: In a high frequency mode a multiphase voltage-controlled oscillator (VCO) generates a first plurality of signals where each has the desired frequency and a different phase. A phase interpolator generates the signal at the desired frequency and the desired phase using a first plurality of signals. In a low frequency mode the VCO generates a second plurality of signals where each has a frequency which is a multiple of the desired frequency and a different phase. A multiphase frequency divider generates a third plurality of signals by dividing the frequency of the second plurality to the desired frequency while maintaining a phase relationship with the second plurality of signals. The phase interpolator generates the signal at the desired frequency and the desired phase using the third plurality.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: August 20, 2013
    Assignee: SK hynix memory solutions inc.
    Inventors: Heung S. Kim, Kenneth J. Evans
  • Publication number: 20090273407
    Abstract: An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate an output signal oscillating at a frequency in response to a first control signal and a second control signal. The second circuit may be configured to generate the second control signal in response to (i) an input voltage and (ii) the output signal. The second circuit (i) generates the second control signal by comparing a peak voltage of the output signal to the input voltage and (ii) adjusts an amplitude of the control signal in response to the comparison.
    Type: Application
    Filed: July 14, 2009
    Publication date: November 5, 2009
    Inventor: Heung S. Kim
  • Patent number: 7567140
    Abstract: An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate an output signal oscillating at a frequency in response to a first control signal and a second control signal. The second circuit may be configured to generate the second control signal in response to (i) an input voltage and (ii) the output signal. The second circuit (i) generates the second control signal by comparing a peak voltage of the output signal to the input voltage and (ii) adjusts an amplitude of the control signal in response to the comparison.
    Type: Grant
    Filed: July 30, 2007
    Date of Patent: July 28, 2009
    Assignee: LSI Corporation
    Inventor: Heung S. Kim
  • Patent number: 7271676
    Abstract: An apparatus comprising a first circuit and a second circuit. The first circuit may be configured to generate an output signal oscillating at a first frequency in response to (i) a first control signal, and (ii) a second control signal. The second circuit may be configured to generate the second control signal in response to (i) an input signal having a voltage and (ii) the output signal. The second circuit may be configured to compare a peak voltage of the output signal to the input voltage.
    Type: Grant
    Filed: October 24, 2005
    Date of Patent: September 18, 2007
    Assignee: LSI Corporation
    Inventor: Heung S. Kim
  • Patent number: 6906595
    Abstract: An apparatus comprising an amplifier, a first resistor and a second resistor. The amplifier (i) comprises a first transistor and a second transistor and (ii) may be configured to generate an output signal in response to an input signal. The first resistor may be connected between an emitter of the second transistor and a signal ground. The second resistor may be connected between the emitter of the second transistor and a base of the first transistor. A gain of the amplifier may be adjusted by varying a value of the first resistor and a value of the second resistor.
    Type: Grant
    Filed: August 30, 2003
    Date of Patent: June 14, 2005
    Assignee: LSI Logic Corporation
    Inventors: Heung S. Kim, Lapoe E. Lynn
  • Patent number: 5319158
    Abstract: A coil integrated semi-conductor device and method of making the same is disclosed. First to third metal layers are in sequence formed on a semi-conductor device. The first and third metal layers of equal width are connected to each other through contact holes, to define a hollow region which is filled with the second metal layer disposed centrally therein and a circumferential region surrounding the second metal layer. The first and third metal layers are used as a coil and the second metal layer is used as a core of magnetic material. The circumferential region surrounding the second metal layer is filled with different dielectric layers. According to the invention, a coil capable of exerting the magnetic field effect can be integrated in a semiconductor chip. This makes it possible contemplation of compactness, integration and preciseness of devices in the form that the coil is wound around the care.
    Type: Grant
    Filed: July 10, 1992
    Date of Patent: June 7, 1994
    Assignee: Goldstar Electron Co., Ltd.
    Inventors: Kyung S. Lee, Heung S. Kim
  • Patent number: 5025180
    Abstract: The present invention relates to a level translator which translates TTL level signals to ECL level. The translating speed is enhanced by making the input circuit of the level translator which receives the TTL data signal composed of an emitter coupled pair such that the circuit does not act in saturation mode. Also, by designing the circuit to make current flow from the pull-up transistor of the TTL transfer through the resistance of the present invention when the TTL data is high level, and to make current flow through the pull-down transistor of the driving TTL circuit into the TTL to ECL level translator when low level, the present invention makes the time delay from the driving TTL circuit to the ECL receiving circuit very small.
    Type: Grant
    Filed: July 5, 1988
    Date of Patent: June 18, 1991
    Assignee: SamSung Semiconductor and Telecommunication Co. Ltd.
    Inventors: Heung S. Kim, Chan K. Myung