Patents by Inventor Heung Teak Bae

Heung Teak Bae has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Epitaxial wafer and switch element and light-emitting element using same
    Patent number: 11309389
    Abstract: An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm2 or less.
    Type: Grant
    Filed: November 21, 2013
    Date of Patent: April 19, 2022
    Assignee: LX Semicon Co., Ltd.
    Inventors: Seok Min Kang, Ji Hye Kim, Heung Teak Bae
  • Deposition apparatus
    Patent number: 9926625
    Abstract: Disclosed is a deposition apparatus. The deposition apparatus includes a susceptor into which reactive gas is introduced, and a wafer holder provided in the susceptor to receive a substrate or a wafer. The wafer holder comprises a gas feeding part provided at a lateral side of the wafer holder.
    Type: Grant
    Filed: September 5, 2012
    Date of Patent: March 27, 2018
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Heung Teak Bae
  • Process of surface treatment for wafer
    Patent number: 9719189
    Abstract: Disclosed is a process of surface treatment of a substrate. The method of treating a surface of a substrate comprises preparing the substrate, and performing an etching process with respect to a surface of the substrate. The etching process comprises a step of introducing etching gas to the surface of the substrate, and the etching gas comprises a halogen compound and a silane compound.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: August 1, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventor: Heung Teak Bae
  • EPITAXIAL WAFER AND SWITCH ELEMENT AND LIGHT-EMITTING ELEMENT USING SAME
    Publication number: 20150295049
    Abstract: An epitaxial wafer includes an epitaxial layer disposed on a substrate. The epitaxial layer includes a first semiconductor layer disposed on the substrate and a second semiconductor layer disposed on the first semiconductor layer and having a thickness that is thicker than that of the first semiconductor layer. A surface defect density of the second semiconductor layer is 0.1/cm2 or less.
    Type: Application
    Filed: November 21, 2013
    Publication date: October 15, 2015
    Inventors: Seok Min Kang, Ji Hye Kim, Heung Teak Bae
  • Process of Surface Treatment for Wafer
    Publication number: 20140290566
    Abstract: Disclosed is a process of surface treatment of a substrate. The method of treating a surface of a substrate comprises preparing the substrate, and performing an etching process with respect to a surface of the substrate. The etching process comprises a step of introducing etching gas to the surface of the substrate, and the etching gas comprises a halogen compound and a silane compound.
    Type: Application
    Filed: August 21, 2012
    Publication date: October 2, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Heung Teak Bae
  • DEPOSITION APPARATUS
    Publication number: 20140290581
    Abstract: Disclosed is a deposition apparatus. The deposition apparatus comprises a susceptor into which reaction gas is introduced; a holder supporting a substrate in the susceptor; and a rotating driver for rotating the holder.
    Type: Application
    Filed: June 21, 2012
    Publication date: October 2, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Seok Min Kang, Moo Seong Kim, Heung Teak Bae, Seo Yong Ha
  • DEPOSITION APPARATUS
    Publication number: 20140230734
    Abstract: Disclosed is a deposition apparatus. The deposition apparatus includes a susceptor into which reactive gas is introduced, and a wafer holder provided in the susceptor to receive a substrate or a wafer. The wafer holder comprises a gas feeding part provided at a lateral side of the wafer holder.
    Type: Application
    Filed: September 5, 2012
    Publication date: August 21, 2014
    Applicant: LG INNOTEK CO., LTD.
    Inventor: Heung Teak Bae