Abstract: A method for fabricating a vertical semiconductor device may include forming a lower-level stack including a source sacrificial layer over a semiconductor substrate; forming an upper-level stack including dielectric layers and sacrificial layers over the lower-level stack; forming a vertical channel structure including a channel layer that penetrates the upper-level stack and the lower-level stack; forming a slit that penetrates the upper-level stack while exposing the source sacrificial layer; forming a lateral recess that extends from the slit by removing the source sacrificial layer; forming a first contact layer which is coupled to a portion of the channel layer while filling the lateral recess; selectively forming a second contact layer over an exposed surface of the first contact layer; and selectively forming a chemical barrier layer over the second contact layer.

Abstract: An embodiment relates a light-emitting device package and a lighting device. A light-emitting device package according to an embodiment may include a package body 11, a light-emitting device 25 disposed on the package body 11, a molding member 41 disposed on the light-emitting device 25, and a phosphor 30 disposed in the molding member 41. An energy ratio of a first wavelength range of 415 nm to 455 nm of the light-emitting device may be 75% or less of energy of a sunlight source having the first wavelength range. An energy ratio of a second wavelength range of 465 nm to 495 nm of the light-emitting device may be 60% or more of energy of a sunlight source having the second wavelength range. Moreover, the energy ratio of the second wavelength range of 465 nm to 495 nm may be higher than the energy ratio of a first wavelength range of 415 nm to 455 nm in the light-emitting device.

Abstract: An embodiment relates a light-emitting device package and a lighting device. A light-emitting device package according to an embodiment may include a package body 11, a light-emitting device 25 disposed on the package body 11, a molding member 41 disposed on the light-emitting device 25, and a phosphor 30 disposed in the molding member 41. An energy ratio of a first wavelength range of 415 nm to 455 nm of the light-emitting device may be 75% or less of energy of a sunlight source having the first wavelength range. An energy ratio of a second wavelength range of 465 nm to 495 nm of the light-emitting device may be 60% or more of energy of a sunlight source having the second wavelength range. Moreover, the energy ratio of the second wavelength range of 465 nm to 495 nm may be higher than the energy ratio of a first wavelength range of 415 nm to 455 nm in the light-emitting device.

Abstract: Embodiments relate to a light emitting device package including a first lead frame and a second lead frame spaced apart from each other, a light emitting device disposed on the first lead frame, a reflecting part disposed on the first lead frame and the second lead frame and a light transmitting part including a lower end part disposed on the reflecting part, the first lead frame and the second lead frame and an upper end part disposed on the lower end part. The upper end part has a side surface vertically aligned with a location of a sidewall between upper and lower ends of the reflecting part.

Abstract: Embodiments relate to a light emitting device package including a first lead frame and a second lead frame spaced apart from each other, a light emitting device disposed on the first lead frame, a reflecting part disposed on the first lead frame and the second lead frame and a light transmitting part including a lower end part disposed on the reflecting part, the first lead frame and the second lead frame and an upper end part disposed on the lower end part. The upper end part has a side surface vertically aligned with a location of a sidewall between upper and lower ends of the reflecting part.