Patents by Inventor Heyun Yin
Heyun Yin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180174843Abstract: A method of etching a workpiece comprising two or more materials is disclosed. The method involves using physical sputtering as the etching method where the processing parameters of the sputtering process are tuned to achieve a desired etch rate selectivity. The method includes determining the etch rate of each material disposed on the workpiece as a function of various processing parameters, such as ion species, ion energy, incidence angle and temperature. Once the relationship between etch rate and these parameters is determined for each material, a set of values for these processing parameters may be chosen to achieve the desired etch rate selectivity.Type: ApplicationFiled: December 16, 2016Publication date: June 21, 2018Inventors: Kevin Anglin, Tristan Ma, Morgan D. Evans, John Hautala, Heyun Yin
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Patent number: 10002764Abstract: A method of etching a workpiece comprising two or more materials is disclosed. The method involves using physical sputtering as the etching method where the processing parameters of the sputtering process are tuned to achieve a desired etch rate selectivity. The method includes determining the etch rate of each material disposed on the workpiece as a function of various processing parameters, such as ion species, ion energy, incidence angle and temperature. Once the relationship between etch rate and these parameters is determined for each material, a set of values for these processing parameters may be chosen to achieve the desired etch rate selectivity.Type: GrantFiled: December 16, 2016Date of Patent: June 19, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Kevin Anglin, Tristan Ma, Morgan D. Evans, John Hautala, Heyun Yin
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Patent number: 8679960Abstract: A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.Type: GrantFiled: October 12, 2010Date of Patent: March 25, 2014Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: George D. Papasouliotis, Vikram Singh, Heyun Yin, Helen L. Maynard, Ludovic Godet
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Patent number: 8507372Abstract: A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.Type: GrantFiled: May 24, 2012Date of Patent: August 13, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: George D. Papasouliotis, Vikram Singh, Heyun Yin
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Publication number: 20120295430Abstract: A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.Type: ApplicationFiled: May 24, 2012Publication date: November 22, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: George D. Papasouliotis, Vikram Singh, Heyun Yin
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Patent number: 8202792Abstract: A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.Type: GrantFiled: April 22, 2010Date of Patent: June 19, 2012Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: George D. Papasouliotis, Vikram Singh, Heyun Yin
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Publication number: 20110086501Abstract: A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles using an ion implanter. During the ion implant, due to the nature of the implant process, a film may be deposited on the surfaces, wherein the thickness of this film is thicker on the horizontal surfaces. The presences of this film may adversely alter the properties of the substrate. To rectify this, a second process step is performed to remove the film deposited on the horizontal surfaces. In some embodiments, an etching process is used to remove this film. In some embodiments, a material modifying step is used to change the composition of the material comprising the film. This material modifying step may be instead of, or in addition to the etching process.Type: ApplicationFiled: October 12, 2010Publication date: April 14, 2011Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: George D. Papasouliotis, Vikram Singh, Heyun Yin, Helen L. Maynard, Ludovic Godet
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Patent number: 7863194Abstract: A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.Type: GrantFiled: April 14, 2010Date of Patent: January 4, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Heyun Yin, George D. Papasouliotis, Vikram Singh
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Publication number: 20100273322Abstract: A technique for conformal processing of a substrate having a non-planar surface is disclosed. The technique includes several stages. In a first stage, some surfaces of the substrate are effectively processed. During a second stage, these surfaces are treated to limit or eliminate further processing of these surfaces. During a third stage, other surfaces of the substrate are processed. In some applications, the surfaces that are perpendicular, or substantially perpendicular to the flow of particles are processed in the first and second stages, while other surfaces are processed in the third stage. In some embodiments, the second stage includes the deposition of a film on the substrate.Type: ApplicationFiled: April 22, 2010Publication date: October 28, 2010Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: George D. Papasouliotis, Vikram Singh, Heyun Yin
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Publication number: 20100240201Abstract: A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.Type: ApplicationFiled: April 14, 2010Publication date: September 23, 2010Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATE,INC.Inventors: Heyun YIN, George D. Papasouliotis, Vikram Singh
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Patent number: 7737013Abstract: A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.Type: GrantFiled: October 21, 2008Date of Patent: June 15, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Heyun Yin, George D. Papasouliotis, Vikram Singh
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Publication number: 20100048018Abstract: A method of fabricating metal interconnects with reduced electromigration includes depositing metal interconnects on a substrate comprising electronic devices. A layer is deposited on the metal interconnects. The layer is doped with at least one dopant having a dopant concentration that increases an electromigration resistance of the metal atoms.Type: ApplicationFiled: August 25, 2008Publication date: February 25, 2010Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Atul Gupta, Heyun Yin, Vikram Singh
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Publication number: 20090117735Abstract: A first species and a second species are implanted into a conductor of a substrate, which may be copper. The first species and second species may be implanted sequentially or at least partly simultaneously. Diffusion of the first species within the conductor of the substrate is prevented by the presence of the second species. In one particular example, the first species is silicon and the second species is nitrogen, although other combinations are possible.Type: ApplicationFiled: October 21, 2008Publication date: May 7, 2009Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Heyun YIN, George D. Papasouliotis, Vikram Singh