Patents by Inventor Hi Jung Kim
Hi Jung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11848043Abstract: A memory device includes memory cells connected to a first word-line, wherein the memory cells include a data region in which data is stored and a counting value backup region in which the number of times the first word-line is activated is backed up, a counting table for storing a first row address corresponding to the first word-line and a first counting value as a counting result of the number of times the first word-line is activated, and a comparator configured to compare the first counting value with a first backed-up counting value stored in the counting value backup region; and when the first counting value is greater than the first backed-up counting value, back up the first counting value in the counting value backup region, or when the first backed-up counting value is greater than the first counting value, overwrite the first backed-up counting value into the counting table.Type: GrantFiled: March 8, 2022Date of Patent: December 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jung Min You, Ho-Youn Kim, Won-Hyung Song, Hi Jung Kim
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Publication number: 20230144366Abstract: A volatile memory device may include; a first sense amplifier, a second sense amplifier spaced apart from the first sense amplifier in a first direction, a first mat disposed between the first sense amplifier and the second sense amplifier and including a first bit line connected to the first sense amplifier and a second bit line connected to the second sense amplifier, a third sense amplifier spaced apart from the second sense amplifier in a second direction, a fourth sense amplifier spaced apart from the third sense amplifier in the first direction, and a second mat disposed between the third sense amplifier and the fourth sense amplifier and including a first complementary bit line connected to the first sense amplifier.Type: ApplicationFiled: July 28, 2022Publication date: May 11, 2023Inventors: JAE PIL LEE, HI JUNG KIM, KWANG SOOK NOH
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Publication number: 20230042955Abstract: A memory device includes memory cells connected to a first word-line, wherein the memory cells include a data region in which data is stored and a counting value backup region in which the number of times the first word-line is activated is backed up, a counting table for storing a first row address corresponding to the first word-line and a first counting value as a counting result of the number of times the first word-line is activated, and a comparator configured to compare the first counting value with a first backed-up counting value stored in the counting value backup region; and when the first counting value is greater than the first backed-up counting value, back up the first counting value in the counting value backup region, or when the first backed-up counting value is greater than the first counting value, overwrite the first backed-up counting value into the counting table.Type: ApplicationFiled: March 8, 2022Publication date: February 9, 2023Inventors: Jung Min YOU, Ho-Youn KIM, Won-Hyung SONG, Hi Jung KIM
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Patent number: 9059418Abstract: Provided is a method for manufacturing a significantly high efficient solar cell having a novel structure and superior stability, and which can be mass-produced from an inexpensive material from an inexpensive material for enabling the easy commercial availability thereof. More particularly, the method of the present invention comprises the following step: (a) depositing slurry containing metal oxide particles and heat-treating the slurry to form a porous electron transporting layer; (b) forming inorganic semiconductors on surfaces of the metal oxide particles for the porous electron-transporting layer; and (c) impregnating the porous electron-transporting layer having the inorganic semiconductor formed thereon with a solution containing an organic photovoltaic material so as to form a hole transporting layer.Type: GrantFiled: February 18, 2011Date of Patent: June 16, 2015Assignee: Korea Research Institute of Chemical TechnologyInventors: Sang Il Seok, Sang Hyuk Im, Jeong Ah Chang, Jae Hui Rhee, Yong Hui Lee, Hi Jung Kim
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Patent number: 8587044Abstract: A complementary logic device includes: an insulating layer formed on a substrate; a source electrode formed of a ferromagnetic body on the insulating layer; a gate insulating film; a gate electrode formed on the gate insulating film and controlling a magnetization direction of the source electrode; a channel layer formed on each of a first side surface and a second side surface of the source electrode and transmitting spin-polarized electrons from the source electrode; a first drain electrode formed on the first side surface of the source electrode; and a second drain electrode formed on the second side surface of the source electrode, wherein a magnetization direction of the first drain electrode and a magnetization direction of the second drain electrode are antiparallel to each other. Therefore, not only characteristics of low power and high speed but also characteristics of non-volatility and multiple switching by spin may be obtained.Type: GrantFiled: November 2, 2012Date of Patent: November 19, 2013Assignee: Korea Institute of Science and TechnologyInventors: Hyun Cheol Koo, Hyung Jun Kim, Joon Yeon Chang, Suk Hee Han, Hi Jung Kim
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Publication number: 20130065354Abstract: Provided is a method for manufacturing a significantly high efficient solar cell having a novel structure and superior stability, and which can be mass-produced from an inexpensive material from an inexpensive material for enabling the easy commercial availability thereof. More particularly, the method of the present invention comprises the following step: (a) depositing slurry containing metal oxide particles and heat-treating the slurry to form a porous electron transporting layer; (b) forming inorganic semiconductors on surfaces of the metal oxide particles for the porous electron-transporting layer; and (c) impregnating the porous electron-transporting layer having the inorganic semiconductor formed thereon with a solution containing an organic photovoltaic material so as to form a hole transporting layer.Type: ApplicationFiled: February 18, 2011Publication date: March 14, 2013Applicant: Korea Research Institute of Chemical TechnologyInventors: Sang Il Seok, Sang Hyuk Im, Jeong Ah Chang, Jae Hui Rhee, Yong Hui Lee, Hi Jung Kim
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Publication number: 20120312375Abstract: Provided is a highly efficient solar cell having a novel structure and excellent stability, and which may be mass-produced from an inexpensive material for enabling easy commercial availability thereof. More particularly, the solar cell of the present invention comprises: a porous inorganic electron-transporting layer containing metallic oxide particles; a light absorber containing inorganic semiconductors; and an organic hole transporting layer containing an organic photo-voltaic material.Type: ApplicationFiled: February 18, 2011Publication date: December 13, 2012Applicant: KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGYInventors: Sang Il Seok, Sang Hyuk Im, Jeong Ah Chang, Jae Hui Lee, Yong Hui Lee, Hi Jung Kim
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Patent number: 7095070Abstract: In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.Type: GrantFiled: March 12, 2004Date of Patent: August 22, 2006Assignee: Korea Institute of Science and TechnologyInventors: Woo Young Lee, Kyung Ho Shin, Suk Hee Han, Joon Yeon Chang, Hi Jung Kim, Dal Young Kim, Kwan Hyi Lee, Kyoung Il Lee, Min Hong Jeun
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Patent number: 7084468Abstract: Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.Type: GrantFiled: March 15, 2004Date of Patent: August 1, 2006Assignee: Korea Institute of Science and TechnologyInventors: Woo Young Lee, Suk Hee Han, Joon Yeon Chang, Hi Jung Kim, Han Joo Lee, Woong Jun Hwang, Moo Whan Shin, Young Keun Kim
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Patent number: 7063986Abstract: A 3 group–5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.Type: GrantFiled: August 3, 2004Date of Patent: June 20, 2006Assignee: Korea Institute of Science and TechnologyInventors: Woo Young Lee, Suk Hee Han, Joon Yeon Chang, Hi Jung Kim, Jung Mi Lee, Jae Min Myoung
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Publication number: 20050094923Abstract: The invention relates to a fabrication of an integrated optical isolator using a Multi-Mode Interference (MMI) structure and a cladding layer comprising magneto-optical material, which remove needless reflection generated in the course of light propagation and make short length integration possible. Thus, the invention uses nonreciprocal phase shift effect that optical characteristics are altered according to the direction of light propagation. In order to fabricate a light waveguide optical isolator, an input light should be separated into two light waveguides having the same power. That is, for the purpose of reducing the length of optical isolator device, the waveguide length needed to separate an input light into two light waveguides should be shortened. Since the light waveguide length of MMI structure is much shorter than the length of Mach-Zehnder light waveguide for separating an input light into two waveguides, the length of optical isolator device using MMI structure can be reduced.Type: ApplicationFiled: September 30, 2004Publication date: May 5, 2005Applicant: Korea Institute of Science and TechnologyInventors: Young-Il Kim, Tae-Hoon Yoon, Seok Lee, Deok-Ha Woo, Sun-Ho Kim, Hi-Jung Kim, Gwan-Su Lee, Sung-Kyu Kim, Min-Chul Park, Chang-Wan Son
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Publication number: 20040179309Abstract: In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated by an electrodepostiting method and a sputtering method and has very great MR characteristics at room temperature, and it can be applied to various spintronics devices.Type: ApplicationFiled: March 12, 2004Publication date: September 16, 2004Applicant: Korea Institute of Science and TechnologyInventors: Woo Young Lee, Kyung Ho Shin, Suk Hee Han, Joon Yeon Chang, Hi Jung Kim, Dal Young Kim, Kwan Hyi Lee, Kyoung Il Lee, Min Hong Jeun
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Publication number: 20040178460Abstract: Disclosed are a spin injection device applicable as a memory and a logical device using a spin valve effect obtained by injecting a carrier spin-polarized from a ferromagnet into a semiconductor at an ordinary temperature, and a spin-polarized field effect transistor.Type: ApplicationFiled: March 15, 2004Publication date: September 16, 2004Applicant: Korea Institute of Science and TechnologyInventors: Woo Young Lee, Suk Hee Han, Joon Yeon Chang, Hi Jung Kim, Han Joo Lee, Woong Jun Hwang, Moo Whan Shin, Young Keun Kim
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Publication number: 20040041217Abstract: A 3 group-5 group compound ferromagnetic semiconductor, comprising one material ‘A’ selected from the group of Ga, Al and In and one material ‘B’ selected from the group consisting of N and P, wherein one material ‘C’ selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material ‘A’, the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.Type: ApplicationFiled: January 14, 2003Publication date: March 4, 2004Applicant: Korea Institute of Science and TechnologyInventors: Woo Young Lee, Suk Hee Han, Joon Yeon Chang, Hi Jung Kim, Jung Mi Lee, Jae Min Myoung
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Patent number: 6649286Abstract: Disclosed is a FeCoNiN-based soft magnetic thin film composition having the formula FexCoyNizNv, wherein x, y, z and v are expressed in at % and satisfy 41≦x≦55, 18≦y≦27, 19≦z≦32, 0<v≦5, and x+y+z+v=100. The Fe-based ultrafine crystalline soft magnetic thin film composition is prepared by the more simplified method and much more excellent soft magnetic properties in the high-frequency than the conventional soft magnetic thin film compositions.Type: GrantFiled: April 20, 2001Date of Patent: November 18, 2003Assignee: Korea Institute of Science and TechnologyInventors: Hi Jung Kim, Suk Hee Han, Ki Hyeon Kim, Yun Myung Kim
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Publication number: 20030208901Abstract: The present invention relates to the method of optimizing of planar type write heads for ultra high density magnetic recording. More particularly, the invention relates to a planar type write head for an ultra high density drive which can record information on a medium with high magneto-crystalline anisotropy.Type: ApplicationFiled: September 12, 2002Publication date: November 13, 2003Inventors: Sang Ho Lim, Hi Jung Kim, Kyoung Suk Kim
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Publication number: 20020160229Abstract: Disclosed is a FeCoNiN-based soft magnetic thin film composition having the formula FexCoyNizNv, wherein x, y, z and v are expressed in at % and satisfy 41≦x≦55, 18≦y≦27, 19≦z≦32, 0<v≦5, and x+y+z+v=100. The Fe-based ultrafine crystalline soft magnetic thin film composition is prepared by the more simplified method and much more excellent soft magnetic properties in the high-frequency than the conventional soft magnetic thin film compositions.Type: ApplicationFiled: April 20, 2001Publication date: October 31, 2002Inventors: Hi Jung Kim, Suk Hee Han, Ki Hyeon Kim, Yun Myung Kim
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Publication number: 20020017341Abstract: Improved Fe—Hf—C—N and Fe—Hf—N materials and preparation methods thereof are disclosed. Such materials possess a high saturation magnetic flux density and an excellent soft magnetic property at a high frequencies of more than tens of MHz, without requiring an additional heat treatment, while avoiding an amorphous phenomenon therein and increasing grain energy. An iron-based soft magnetic thin film alloy has an empirical formula of FexHfyCzNv (where, x, y, z, and v respectively denote atomic %, 68≦x≦85, 4≦y≦10, 0≦z≦12, 3≦v≦20, 15≦y+z+v≦32, and x+y+z+v=100), and its fine structure is formed of nano size crystalline grains including nitrides or carbides of &agr;-Fe and Hf.Type: ApplicationFiled: January 5, 1999Publication date: February 14, 2002Inventors: HI JUNG KIM, SUK HEE HAN, JONGRYOUL KIM, JAE YONG SONG