Abstract: An acceleration sensor includes: a moving electrode extending in at least one of a first direction and a second direction perpendicular to the first direction, and including a plurality of planar patterns connected with each other; and an opposing electrode forming a capacitance with the moving electrode, wherein the plurality of planar patterns include: a first frame pattern; a first anchor pattern fixing the moving electrode to a surrounding structure; a first spring pattern connecting the first frame pattern and the first anchor pattern and having a stretching direction of the first direction; a second spring pattern connecting the first frame pattern and the first anchor pattern and having a stretching direction of the second direction; a wing pattern; and a third spring pattern connecting the first frame pattern and the wing pattern and having a stretching direction of a third direction perpendicular to the first and second directions.

Abstract: An acceleration sensor includes: a moving electrode extending in at least one of a first direction and a second direction perpendicular to the first direction, and including a plurality of planar patterns connected with each other; and an opposing electrode forming a capacitance with the moving electrode, wherein the plurality of planar patterns include: a first frame pattern; a first anchor pattern fixing the moving electrode to a surrounding structure; a first spring pattern connecting the first frame pattern and the first anchor pattern and having a stretching direction of the first direction; a second spring pattern connecting the first frame pattern and the first anchor pattern and having a stretching direction of the second direction; a wing pattern; and a third spring pattern connecting the first frame pattern and the wing pattern and having a stretching direction of a third direction perpendicular to the first and second directions.

Abstract: A switching type six-axis force-torque sensor is provided which includes: a sensor substrate attached to a structural body to be measured. A first measuring unit is installed at one side in respect to a central portion of the sensor substrate and measures strain and a second measuring unit is installed on the sensor substrate at a position that faces the first measuring unit in respect to the central portion and measures strain. Further, a third measuring unit is installed at a position that is orthogonal to a connecting line, which connects the first measuring unit and the second measuring unit, and measures strain and a fourth measuring unit is installed at a position that faces the third measuring unit in respect to the central portion and measures strain.

Abstract: A method of joining semiconductor substrates includes: forming an alignment key on a first semiconductor substrate; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a first metal layer and a second metal layer on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined.

Abstract: A method of joining semiconductor substrates, which may include: forming an alignment key on a first semiconductor substrate; forming an insulating layer on the first semiconductor substrate and the alignment key; forming a first metal layer pattern and a second metal layer pattern on the insulating layer; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a third metal layer pattern and a fourth metal layer pattern on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined, is provided.

Abstract: A method of joining semiconductor substrates includes: forming an alignment key on a first semiconductor substrate; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a first metal layer and a second metal layer on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined.

Abstract: A method of joining semiconductor substrates, which may include: forming an alignment key on a first semiconductor substrate; forming an insulating layer on the first semiconductor substrate and the alignment key; forming a first metal layer pattern and a second metal layer pattern on the insulating layer; forming a first protrusion and a second protrusion, and an alignment recess positioned between the first protrusion and the second protrusion on a second semiconductor substrate; forming a third metal layer pattern and a fourth metal layer pattern on the first protrusion and the second protrusion, respectively; and joining the first semiconductor substrate and the second semiconductor substrate, in which the alignment key is positioned at the alignment recess when the first semiconductor substrate and the second semiconductor substrate are joined, is provided.

Abstract: A switching type six-axis force-torque sensor is provided which includes: a sensor substrate attached to a structural body to be measured. A first measuring unit is installed at one side in respect to a central portion of the sensor substrate and measures strain and a second measuring unit is installed on the sensor substrate at a position that faces the first measuring unit in respect to the central portion and measures strain. Further, a third measuring unit is installed at a position that is orthogonal to a connecting line, which connects the first measuring unit and the second measuring unit, and measures strain and a fourth measuring unit is installed at a position that faces the third measuring unit in respect to the central portion and measures strain.

Abstract: The present disclosure relates to a piezoresistive sensor that improves measurement precision by using a piezoresistive pattern that increases a piezoresistive deformation rate. An embodiment of the present disclosure provides a piezoresistive sensor that may include: a semiconductor substrate, four beams formed as a cross-shape with reference to a central body of the semiconductor substrate, and sixteen piezoresistive patterns formed on a top of the four beams, wherein sixteen piezoresistive patterns are formed as an “X” shape and are disposed on the four beams so as to form four piezoresistive pattern groups.

Abstract: Disclosed is a strain gauge type force-torque sensor and a method for manufacturing the same. More specifically, a first sensor structure having a convex part on a bonding surface thereof and a second sensor structure having a concave part bonded to the convex part of the first sensor structure are formed. The gauge film is formed by installing a strain gauge on a flexible film. The gauge film is compressively interposed between the bonding surface of the first sensor structure having the convex part and a bonding surface of the second sensor structure having the concave part to initially deform the gauge film. The first sensor structure and the second sensor structure are fixed to each other in a state where the gauge film is initially deformed.

Abstract: Disclosed is a strain gauge type force-torque sensor and a method for manufacturing the same. More specifically, a first sensor structure having a convex part on a bonding surface thereof and a second sensor structure having a concave part bonded to the convex part of the first sensor structure are formed. The gauge film is formed by installing a strain gauge on a flexible film. The gauge film is compressively interposed between the bonding surface of the first sensor structure having the convex part and a bonding surface of the second sensor structure having the concave part to initially deform the gauge film. The first sensor structure and the second sensor structure are fixed to each other in a state where the gauge film is initially deformed.