Patents by Inventor Hichem Abdallah

Hichem Abdallah has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method for power detection in a power amplifier using an adjustable load
    Patent number: 8452243
    Abstract: A power amplifier system includes a first power detector configured to detect a forward power output of a power amplifier, the first power detector configured to provide a first power detector output and an adjustable load coupled to the output of the power amplifier and configured to receive the first power detector output, the adjustable load configured to provide an adjustable impedance at the output of the power amplifier in response to one of the output of the power amplifier and the first power detector output.
    Type: Grant
    Filed: August 14, 2009
    Date of Patent: May 28, 2013
    Assignee: Skyworks Solutions, Inc.
    Inventors: Dima Prikhodko, Hichem Abdallah, Sergey Nabokin, Gene A. Tkachenko
  • System And Method For Power Detection In A Power Amplifier Using An Adjustable Load
    Publication number: 20090318093
    Abstract: A power amplifier system includes a first power detector configured to detect a forward power output of a power amplifier, the first power detector configured to provide a first power detector output and an adjustable load coupled to the output of the power amplifier and configured to receive the first power detector output, the adjustable load configured to provide an adjustable impedance at the output of the power amplifier in response to one of the output of the power amplifier and the first power detector output.
    Type: Application
    Filed: August 14, 2009
    Publication date: December 24, 2009
    Inventors: Dima Prikhodko, Hichem Abdallah, Sergey Nabokin, Gene A. Tkachenko
  • Semiconductor component with integrated capacitance structure having a plurality of metallization planes
    Patent number: 7061746
    Abstract: A semiconductor component includes an insulating layer, which is configured on a semiconductor substrate and in which a capacitor structure is formed. The capacitor structure has at least two parallel metallization planes, whereby at least one of the planes is configured in a lattice and inhomogeneous structure, which are electrically connected to the first metallization plane, extended at least partially into the cavities of the latticework metallization plane.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: June 13, 2006
    Assignee: Infineon Technologies AG
    Inventors: Hichem Abdallah, Jürgen Öhm
  • Semiconductor component comprising an integrated capacitor structure tha has a plurality of metallization planes
    Publication number: 20050219790
    Abstract: A semiconductor component includes an insulating layer, which is configured on a semiconductor substrate and in which a capacitor structure is formed. Said capacitor structure comprises at least two parallel metallization planes, whereby at least one of said planes is configured in a lattice and inhomogeneous structure, which are electrically connected to the first metallization plane, extended at least partially into the cavities of the latticework metallization plane.
    Type: Application
    Filed: April 17, 2003
    Publication date: October 6, 2005
    Inventors: Hichem Abdallah, Jurgen Ohm