Patents by Inventor Hichem M'Saad

Hichem M'Saad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7638440
    Abstract: Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including forming a dielectric material layer on a surface of the substrate, depositing an amorphous carbon layer on the dielectric material layer by introducing a processing gas comprises one or more hydrocarbon compounds and an argon carrier gas, and generating a plasma of the processing gas by applying power from a dual-frequency RF source, etching the amorphous carbon layer to form a patterned amorphous carbon layer, and etching feature definitions in the dielectric material layer corresponding to the patterned amorphous carbon layer. The amorphous carbon layer may act as an etch stop, an anti-reflective coating, or both.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: December 29, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Yuxiang May Wang, Sudha S. R. Rathi, Michael Chiu Kwan, Hichem M'Saad
  • Publication number: 20090314309
    Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
    Type: Application
    Filed: June 19, 2008
    Publication date: December 24, 2009
    Inventors: Ramprakash Sankarakrishnan, Dale DuBois, Ganesh Balasubramanian, Karthik Janakiraman, Juan Carlos Rocha-Alvarez, Thomas Nowak, Visweswaren Sivaramakrishnan, Hichem M'Saad
  • Publication number: 20090278081
    Abstract: A method for forming a polishing media and an article of manufacture is described. The article of manufacture may be formed into a polishing article. The polishing article includes a polymer base material and a plurality of nano-scale structures disposed in or on the polymer base material.
    Type: Application
    Filed: March 25, 2009
    Publication date: November 12, 2009
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Hichem M'Saad, Lakshmanan Karuppiah, Hung Chih Chen, Jeonghoon Oh, Robert Lum, Stan D. Tsai, Cassio Conceicao, Ashish Bhatnagar, Michael Perry, Kadthala Narendrnath, Yosi Shacham-Diamand
  • Publication number: 20090280580
    Abstract: In one embodiment a method is provided for maintaining a substrate processing surface. The method generally includes performing a set of measurements on the substrate processing surface, wherein the set of measurements are taken using a displacement sensor coupled to a processing surface conditioning arm, determining a processing surface profile based on the set of measurements, comparing the processing surface profile to a minimum profile threshold, and communicating a result of the profile comparison.
    Type: Application
    Filed: May 8, 2009
    Publication date: November 12, 2009
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Antoine P. Manens, Wei-Yung Hsu, Hichem M'Saad
  • Patent number: 7611996
    Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
    Type: Grant
    Filed: March 21, 2005
    Date of Patent: November 3, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Francimar Schmitt, Yi Zheng, Kang Sub Yim, Sang H. Ahn, Lester A. D'Cruz, Dustin W. Ho, Alexandros T. Demos, Li-Qun Xia, Derek R. Witty, Hichem M'Saad
  • Patent number: 7601651
    Abstract: A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.
    Type: Grant
    Filed: January 30, 2007
    Date of Patent: October 13, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Mihaela Balseanu, Meiyee Shek, Li-Qun Xia, Hichem M'Saad
  • Publication number: 20090236214
    Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
    Type: Application
    Filed: March 20, 2008
    Publication date: September 24, 2009
    Inventors: Karthik Janakiraman, Thomas Nowak, Juan Carlos Rocha-Alvarez, Mark A. Fodor, Dale R. Du Bois, Amit Bansal, Mohamad Ayoub, Eller Y. Juco, Visweswaren Sivaramakrishnan, Hichem M'Saad
  • Patent number: 7572337
    Abstract: Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.
    Type: Grant
    Filed: May 16, 2005
    Date of Patent: August 11, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Juan Carlos Rocha-Alvarez, Ganesh Balasubramanian, Tom K. Cho, Deenesh Padhi, Thomas Nowak, Bok Hoen Kim, Hichem M'Saad, Daemian Raj
  • Patent number: 7566655
    Abstract: A process flow integration scheme employs one or more techniques to control stress in a semiconductor device formed thereby. In accordance with one embodiment, cumulative stress contributed by RTP of a nitride spacer and polysilicon gate, and subsequent deposition of a high stress etch stop layer, enhance strain and improve device performance. Germanium may be deposited or implanted into the gate structure in order to facilitate stress control.
    Type: Grant
    Filed: April 5, 2006
    Date of Patent: July 28, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Mihaela Balseanu, Jia Lee, Mei-Yee Shek, Amir Al-Bayati, Li-Qun Xia, Hichem M'Saad
  • Publication number: 20090162259
    Abstract: An ultraviolet (UV) cure chamber enables curing a dielectric material disposed on a substrate and in situ cleaning thereof. A tandem process chamber provides two separate and adjacent process regions defined by a body covered with a lid having windows aligned respectively above each process region. One or more UV sources per process region that are covered by housings coupled to the lid emit UV light directed through the windows onto substrates located within the process regions. The UV sources can be an array of light emitting diodes or bulbs utilizing a source such as microwave or radio frequency. The UV light can be pulsed during a cure process. Using oxygen radical/ozone generated remotely and/or in-situ accomplishes cleaning of the chamber. Use of lamp arrays, relative motion of the substrate and lamp head, and real-time modification of lamp reflector shape and/or position can enhance uniformity of substrate illumination.
    Type: Application
    Filed: February 26, 2009
    Publication date: June 25, 2009
    Inventors: Thomas Nowak, Juan Carlos Rocha-Alvarez, Andrzej Kaszuba, Scott A. Hendrickson, Dustin W. Ho, Sanjeev Baluja, Tom Cho, Josephine Chang, Hichem M'saad
  • Publication number: 20090137132
    Abstract: Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.
    Type: Application
    Filed: February 4, 2009
    Publication date: May 28, 2009
    Inventors: Ritwik Bhatia, Li-Qun Xia, Chad Peterson, Hichem M'Saad
  • Publication number: 20090104764
    Abstract: A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.
    Type: Application
    Filed: October 22, 2007
    Publication date: April 23, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Mihaela Balseanu, Victor Nguyen, Derek R. Witty, Hichem M'Saad, Haichun Yang, Xinliang Lu, Chien-Teh Kao, Mei Chang
  • Publication number: 20090093132
    Abstract: The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.
    Type: Application
    Filed: October 9, 2007
    Publication date: April 9, 2009
    Inventors: HUIWEN XU, Yijun Liu, Li-Qun Xia, Derek R. Witty, Hichem M'Saad
  • Publication number: 20090093100
    Abstract: The present invention generally provides a method for forming multilevel interconnect structures, including multilevel interconnect structures that include an air gap. One embodiment provides a method for forming conductive lines in a semiconductor structure comprising forming trenches in a first dielectric layer, wherein air gaps are to be formed in the first dielectric layer, depositing a conformal dielectric barrier film in the trenches, wherein the conformal dielectric barrier film comprises a low k dielectric material configured to serve as a barrier against a wet etching chemistry used in forming the air gaps in the first dielectric layer, depositing a metallic diffusion barrier film over the conformal low k dielectric layer, and depositing a conductive material to fill the trenches.
    Type: Application
    Filed: October 9, 2007
    Publication date: April 9, 2009
    Inventors: Li-Qun Xia, Huiwen Xu, Mihaela Balseanu, Meiyee (Maggie Le) Shek, Derek R. Witty, Hichem M'Saad
  • Publication number: 20090093128
    Abstract: Methods for high temperature deposition an amorphous carbon film with improved step coverage are provided. In one embodiment, a method for of depositing an amorphous carbon film includes providing a substrate in a process chamber, heating the substrate at a temperature greater than 500 degrees Celsius, supplying a gas mixture comprising a hydrocarbon compound and an inert gas into the process chamber containing the heated substrate, and depositing an amorphous carbon film on the heated substrate having a stress of between 100 mega-pascal (MPa) tensile and about 100 mega-pascal (MPa) compressive.
    Type: Application
    Filed: October 8, 2007
    Publication date: April 9, 2009
    Inventors: MARTIN JAY SEAMONS, Yoganand N. Saripalli, Kwangduk Douglas Lee, Bok Hoen Kim, Visweswaren Sivaramakrishnan, Wendy H. Yeh, Josephine Ju-Hwei Chang Liu, Amir Al-Bayati, Derek R. Witty, Hichem M'Saad
  • Patent number: 7514125
    Abstract: Methods of making an article having a protective coating for use in semiconductor applications are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: April 7, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Deenesh Padhi, Chiu Chan, Sudha Rathi, Ganesh Balasubramanian, Jianhua Zhou, Karthik Janakiraman, Martin J. Seamons, Visweswaren Sivaramakrishnan, Derek R. Witty, Hichem M'Saad
  • Patent number: 7501354
    Abstract: Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxidizable non-silicon component having thermally labile groups, in a reactive oxygen ambient and in the presence of a plasma. The deposited silicon oxide film is annealed to form dispersed microscopic voids or pores that remain in the nano-porous silicon. Oxidizable non-silicon components with thermally labile groups that leave by-products readily removed from the chamber, include but are not limited to, limonene, carene, cymene, fenchone, vinyl acetate, methyl methacrylate, ethyl vinyl ether, tetrahydrofuran, furan, 2,5 Norbornadiene, cyclopentene, cyclopentene oxide, methyl cyclopentene, 2-cyclopentene-1-one, and 1-butene.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: March 10, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Dustin W. Ho, Derek R. Witty, Helen R. Armer, Hichem M'Saad
  • Patent number: 7501355
    Abstract: Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers.
    Type: Grant
    Filed: June 29, 2006
    Date of Patent: March 10, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Ritwik Bhatia, Li-Qun Xia, Chad Peterson, Hichem M'Saad
  • Publication number: 20090044753
    Abstract: An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
    Type: Application
    Filed: October 21, 2008
    Publication date: February 19, 2009
    Inventors: Deenesh Padhi, Chiu Chan, Sudha Rathi, Ganesh Balasubramanian, Jianhua Zhou, Karthik Janakiraman, Martin J. Seamons, Visweswaren Sivaramakrishnan, Derek R. Witty, Hichem M'Saad
  • Publication number: 20090017640
    Abstract: Methods of forming boron-containing films are provided. The methods include introducing a boron-containing precursor into a chamber and depositing a network comprising boron-boron bonds on a substrate by thermal decomposition or a plasma process. The network may be post-treated to remove hydrogen from the network and increase the stress of the resulting boron-containing film. The boron-containing films have a stress between about ?10 GPa and 10 GPa and may be used as boron source layers or as strain-inducing layers.
    Type: Application
    Filed: July 11, 2008
    Publication date: January 15, 2009
    Inventors: Jeong-Uk Huh, Mihaela Balseanu, Li-Qun Xia, Derek R. Witty, Hichem M'Saad