Patents by Inventor Hide Nagai

Hide Nagai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic element having low saturation magnetization
    Patent number: 8476723
    Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.
    Type: Grant
    Filed: June 14, 2011
    Date of Patent: July 2, 2013
    Assignees: Grandis, Inc., Renesas Electronics Corporation
    Inventors: Hide Nagai, Zhitao Diao, Yiming Huai
  • Magnetic Element Having Low Saturation Magnetization
    Publication number: 20110241141
    Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.
    Type: Application
    Filed: June 14, 2011
    Publication date: October 6, 2011
    Applicants: RENESAS TECHNOLOGY CORPORATION, GRANDIS INC.
    Inventors: Hide Nagai, Zhitao Diao, Yiming Huai
  • Magnetic element having low saturation magnetization
    Patent number: 7982275
    Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer. The free layer is includes low saturation magnetization materials.
    Type: Grant
    Filed: August 22, 2007
    Date of Patent: July 19, 2011
    Assignees: Grandis Inc., Renesas Technology Corporation
    Inventors: Hide Nagai, Zhitao Diao, Yiming Huai
  • Magnetic Element Having Low Saturation Magnetization
    Publication number: 20090050991
    Abstract: A magnetic device including a magnetic element is described. The magnetic element includes a fixed layer having a fixed layer magnetization, a spacer layer that is nonmagnetic, and a free layer having a free layer magnetization. The free layer is changeable due to spin transfer when a write current above a threshold is passed through the first free layer.
    Type: Application
    Filed: August 22, 2007
    Publication date: February 26, 2009
    Inventors: Hide Nagai, Zhitao Diao, Yiming Huai