Patents by Inventor Hideaki Asao
Hideaki Asao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9935219Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device 11 according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles 3a coupled together as a light-absorbing layer 3, each of the semiconductor particles 3a including a group I-III-VI compound, each of the semiconductor particles 3a having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.Type: GrantFiled: October 10, 2016Date of Patent: April 3, 2018Assignee: KYOCERA CorporationInventors: Shintaro Kubo, Michimasa Kikuchi, Hideaki Asao, Shinnosuke Ushio
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Publication number: 20170025556Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device 11 according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles 3a coupled together as a light-absorbing layer 3, each of the semiconductor particles 3a including a group I-III-VI compound, each of the semiconductor particles 3a having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.Type: ApplicationFiled: October 10, 2016Publication date: January 26, 2017Inventors: Shintaro KUBO, Michimasa KIKUCHI, Hideaki ASAO, Shinnosuke USHIO
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Publication number: 20160341759Abstract: A sensor comprising: a mass element; a frame surrounding the mass element; a connecting body having flexibility, and connecting the mass element to the frame; a pressure detecting unit; and an acceleration detecting unit. The mass element comprises: a main portion comprising a through-hole passing therethrough from the top surface to the bottom surface; a mounting portion connected to the top surface of the main portion, and surrounding an outer periphery of the through-hole; a first cover portion having flexibility, connected to the mounting portion and covering the through-hole; and a second cover portion, disposed on the bottom surface of the main portion, covering the through-hole, and deformable less than the first cover portion when received an external force.Type: ApplicationFiled: January 26, 2015Publication date: November 24, 2016Inventors: Tokuichi YAMAJI, Yuko YOKOTA, Atsuo HATATE, Hiroki ISHIKAWA, Takeshi SUZUKI, Hideaki ASAO
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Patent number: 9484476Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.Type: GrantFiled: March 15, 2012Date of Patent: November 1, 2016Assignee: KYOCERA CORPORATIONInventors: Shintaro Kubo, Michimasa Kikuchi, Hideaki Asao, Shinnosuke Ushio
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Publication number: 20140345693Abstract: A photoelectric conversion device and a method for producing a photoelectric conversion device are disclosed. The photoelectric conversion device includes a light-absorbing layer. The light-absorbing layer contains a chalcopyrite-based compound, and has a peak intensity ratio IB/IA in a range of 3 to 9, where IA represents a peak intensity of the peak formed by combining a peak of a (220) plane and a peak of a (204) plane in X-ray diffraction, and IB represents a peak intensity of a (112) plane.Type: ApplicationFiled: August 17, 2012Publication date: November 27, 2014Applicant: KYOCERA CORPORATIONInventors: Hideaki Asao, Shintaro Kubo, Shuji Nakazawa, Yusuke Miyamichi, Tatsuya Domoto, Keizo Takeda, Kazuki Yamada, Kotaro Tanigawa, Hiromitsu Ogawa
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Publication number: 20140224333Abstract: A photoelectric converter is disclosed. The photoelectric converter includes a light-absorbing layer. The light-absorbing layer includes a plurality of crystalline grains. The grains contain a Group I-III-VI chalcopyrite compound semiconductor. The light-absorbing layer contains oxygen and an average atomic concentration of oxygen at grain boundaries of the light-absorbing layer is larger than the average atomic concentration of oxygen in the grains of the light-absorbing layer.Type: ApplicationFiled: July 27, 2012Publication date: August 14, 2014Applicant: KYOCERA CORPORATIONInventors: Shintaro Kubo, Hideaki Asao, Seiichiro Inai, Hisakazu Ninomiya, Shuji Nakazawa
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Patent number: 8772826Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.Type: GrantFiled: May 30, 2011Date of Patent: July 8, 2014Assignee: KYOCERA CorporationInventors: Hideaki Asao, Rui Kamada, Shuichi Kasai, Seiji Oguri, Isamu Tanaka, Nobuyuki Horiuchi, Kazumasa Umesato
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Publication number: 20140014177Abstract: It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof.Type: ApplicationFiled: March 15, 2012Publication date: January 16, 2014Applicant: KYOCERA CORPORATIONInventors: Shintaro Kubo, Michimasa Kikuchi, Hideaki Asao, Shinnosuke Ushio
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Publication number: 20130069187Abstract: It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers.Type: ApplicationFiled: May 30, 2011Publication date: March 21, 2013Applicant: KYOCERA CORPORATIONInventors: Hideaki Asao, Rui Kamada, Shuichi Kasai, Seiji Oguri, Isamu Tanaka, Nobuyuki Horiuchi, Kazumasa Umesato