Abstract: A shift device is provided with a shift lever, a parking switch, and a neutral switch. A transmission is switched to a range, in which the transmission of driving force to driving wheels of a vehicle is started, by the shift lever being operated in two or more directions from a home position and arriving at a specific position. The transmission is switched to a range, in which the transmission of driving force to the driving wheels of the vehicle is interrupted, by the parking switch and the neutral switch being operated in one direction.

Abstract: A shift device is provided with a shift lever, a parking switch, and a neutral switch. A transmission is switched to a range, in which the transmission of driving force to driving wheels of a vehicle is started, by the shift lever being operated in two or more directions from a home position and arriving at a specific position. The transmission is switched to a range, in which the transmission of driving force to the driving wheels of the vehicle is interrupted, by the parking switch and the neutral switch being operated in one direction.

Abstract: A switch member comprising a convex knob portion on which the finger of an operator catches, wherein the knob portion is retained such that it is pivotable around a pivot shaft, a base surface of the knob portion is configured as a curved convex surface, wherein the curved convex surface is configured as a surface whose radius of curvature gradually becomes larger in a pulling direction of the finger catching on the knob portion, is provided.

Abstract: A switch member comprising a convex knob portion on which the finger of an operator catches, wherein the knob portion is retained such that it is pivotable around a pivot shaft, a base surface of the knob portion is configured as a curved convex surface, wherein the curved convex surface is configured as a surface whose radius of curvature gradually becomes larger in a pulling direction of the finger catching on the knob portion, is provided.

Abstract: Provided is a method of manufacturing a semiconductor device in which various kinds of processing conditions such as the polishing time in a CMP step can be always provided most appropriate against a wafer of a product lot even if there is an error in the film thickness or the like generated in a CVD step performed prior to the CMP step. The processing conditions in the CMP step are provided based on the film thickness formed in the prior CVD step. Thereby, even if there is an error in the film thickness generated in the CVD step, the processing conditions in the CMP step are provided most appropriate with the consideration of the error. In detail, based on the CVD film thickness and the target value, a processing condition calculator performs calculation of the actual amount of polishing of the present lot. Then, the processing condition calculator performs calculation based on the data, and the searched polishing rate or the searched updated value. Thereby, the polishing time is calculated.

Abstract: Disclosed herein is a polishing device including a polishing plate having an upper surface on which a polishing pad is attached, a polishing head having a lower surface opposed to an upper surface of the polishing pad on the polishing plate, for holding a substrate to be polished on the lower surface, and a pressure source for applying a polishing pressure to the polishing head, whereby the substrate held by the polishing head is pressed against the upper surface of the polishing pad under the polishing pressure applied from the pressure source to perform polishing of the substrate. The polishing head is provided with a contact pressure adjusting mechanism capable of adjusting an in-plane contact pressure of the substrate against the upper surface of the polishing pad on the polishing plate at every area of the substrate. Accordingly, the uniformity and the planarity in the plane of the substrate surface to be polished can be improved with a high throughput.

Abstract: Disclosed herein is a polishing device including a polishing plate having an upper surface on which a polishing pad is attached, a polishing head having a lower surface opposed to an upper surface of the polishing pad on the polishing plate, for holding a substrate to be polished on the lower surface, and a pressure source for applying a polishing pressure to the polishing head, whereby the substrate held by the polishing head is pressed against the upper surface of the polishing pad under the polishing pressure applied from the pressure source to perform polishing of the substrate. The polishing head is provided with a contact pressure adjusting mechanism capable of adjusting an in-plane contact pressure of the substrate against the upper surface of the polishing pad on the polishing plate at every area of the substrate. Accordingly, the uniformity and the planarity in the plane of the substrate surface to be polished can be improved with a high throughput.

Abstract: The method and apparatus of polishing and post-processing a substrate by which the particle level after planarization of a semiconductor device by polishing may be reduced. According to the present invention, the substrate of the semiconductor device to be processed is maintained in a wet state since directly after polishing until the end of post-processing.

Abstract: Disclosed herein is a polishing including a polishing plate having an upper surface on which a polishing pad is attached, a polishing head having a lower surface opposed to an upper surface of the polishing pad on the polishing plate, for holding a substrate to be polished on the lower surface, and a pressure source for applying a polishing pressure to the polishing head, whereby the substrate held by the polishing head is pressed against the upper surface of the polishing pad under the polishing pressure applied from the pressure source to perform polishing of the substrate. The polishing head is provided with a contact pressure adjusting mechanism capable of adjusting an in-plane contact pressure of the substrate against the upper surface of the polishing pad on the polishing plate at every area of the substrate. Accordingly, the uniformity and the planarity in the plane of the substrate surface to be polished can be improved with a high throughput.

Abstract: A method of forming a metal plug, including a step of flattening by polishing the surface of a contact plug which is formed by etching back a metal layer, for example, a deposited layer of Blk-W on a substrate. It also makes it possible to print a wiring metal layer by a lithographic process which has thus far been considered difficult to apply to Blk-W. In the method of the invention, a contact hole 3 is opened in an insulation film layer 2 on a substrate 1, and, after coating an adhesion layer 4, a metal layer 5 is deposited on the entire surface. Thereafter, the surface of the metal layer 5 is flattened by a polishing operation, and etched back to form a metal plug 7.

Abstract: A method of forming trench isolation including a burying step of burying trenches by a deposition means for conducting etching and deposition simultaneously and a polishing step of flattening a burying material by polishing is conducted by disposing an isotropic etching step, a multi-layered etching stopper and a protrusion unifying structure. Polishing can be attained with satisfactory flatness uniformly or with no polishing residue even in a portion to be polished in which the etching stopper layer is distributed unevenly. The method can be applied to manufacture of a semiconductor device or the like.

Abstract: A bias ECR plasma CVD apparatus includes an ECR plasma generating chamber and a plasma CVD chamber for forming a film on a substrate by a plasma CVD reaction. A heating device and a cooling device are provided at least in the vicinity of the substrate for maintaining the substrate and the vicinity thereof at a constant temperature. With this construction, the number of contaminant particles deposited on a surface of the substrate in forming the film on the substrate can be reduced.

Abstract: A method of forming trench isolation including a burying step of burying trenches by a deposition means for conducting etching and deposition simultaneously and a polishing step of flattening a burying material by polishing is conducted by disposing an isotropic etching step, a multi-layered etching stopper and a protrusion unifying structure. Polishing can be attained with satisfactory flatness uniformly or with no polishing residue even in a portion to be polished in which the etching stopper layer is distributed unevenly. The method can be applied to manufacture of a semiconductor device or the like.