Patents by Inventor Hideaki Ikegawa

Hideaki Ikegawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for forming electrode on semiconductor device
    Patent number: 4224115
    Abstract: Semiconductor substrates electroplated with nickel-palladium alloy consisting of above 50 to 80 atomic percent nickel and below 50 to 20 atomic percent palladium exhibit excellent thermal stability.
    Type: Grant
    Filed: June 26, 1978
    Date of Patent: September 23, 1980
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Aiichiro Nara, Hisao Kondo, Takeji Fujiwara, Hideaki Ikegawa
  • Nickel-palladium Schottky junction in a cavity
    Patent number: 4223327
    Abstract: A Schottky barrier semiconductor device comprising a semiconductor substrate having a hole in part of one of its main surfaces, a surface protecting film formed on the main surface and having a flange-like part extending over the edge of the hole, and a barrier metal formed on the entire wall of the hole including areas underneath the flange-like portion. The barrier metal film thus formed prevents concentration of an electric field at the edge of the interface between the barrier metal and the semiconductor substrate, thereby improving the reverse breakdown characteristics.
    Type: Grant
    Filed: May 24, 1978
    Date of Patent: September 16, 1980
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Aiichiro Nara, Hisao Kondo, Takeji Fujiwara, Hideaki Ikegawa