Patents by Inventor Hideaki Kawakami
Hideaki Kawakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9256110Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.Type: GrantFiled: February 12, 2014Date of Patent: February 9, 2016Assignee: Xenogenic Development Limited Liability CompanyInventors: Junichi Koike, Hideaki Kawakami
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Patent number: 9123821Abstract: To make it possible to form a metal electrode of low electrical contact resistance on a conductive indium-containing oxide semiconductor layer constituting a device active layer of a thin-film transistor or the like. Between an indium-containing oxide semiconductor layer and a metal electrode layer provided above this layer for passing device operating current, which can reduce indium oxide or the like of the oxide semiconductor layer. A metallic oxide layer and a metal layer are formed using as material a metal film including an easily oxidable metal, and further an indium-rich layer in which reduced indium is accumulated is formed at a boundary between the metallic oxide layer and the metal layer.Type: GrantFiled: September 5, 2013Date of Patent: September 1, 2015Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Mayumi Naito, Pilsang Yun, Hideaki Kawakami
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Patent number: 8895978Abstract: An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced. A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103, and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107, wherein the intermediate layer 106 includes a first region 106a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106b whose indium atomic concentration is less than that of the first region.Type: GrantFiled: June 30, 2011Date of Patent: November 25, 2014Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Pilsang Yun, Hideaki Kawakami
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Patent number: 8866140Abstract: Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor 10 of the present invention includes a semiconductor layer 4 composed of oxide semiconductor, a source electrode 5 and a drain electrode 6 that are layers composed mainly of copper, and oxide reaction layers 22 provided between the semiconductor layer 4 and each of the source electrode 5 and drain electrode 6, and high-conductance layers 21 provided between the oxide reaction layers 22 and semiconductor layer 4.Type: GrantFiled: January 2, 2013Date of Patent: October 21, 2014Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Pilsang Yun, Hideaki Kawakami
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Publication number: 20140225119Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.Type: ApplicationFiled: February 12, 2014Publication date: August 14, 2014Applicant: Altiam Services Ltd. LLCInventors: Junichi Koike, Hideaki Kawakami
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Patent number: 8681282Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.Type: GrantFiled: April 23, 2012Date of Patent: March 25, 2014Assignee: Altiam Services Ltd. LLCInventors: Junichi Koike, Hideaki Kawakami
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Publication number: 20140070207Abstract: To make it possible to form a metal electrode of low electrical contact resistance on a conductive indium-containing oxide semiconductor layer constituting a device active layer of a thin-film transistor or the like. Between an indium-containing oxide semiconductor layer and a metal electrode layer provided above this layer for passing device operating current, which can reduce indium oxide or the like of the oxide semiconductor layer. A metallic oxide layer and a metal layer are formed using as material a metal film including an easily oxidable metal, and further an indium-rich layer in which reduced indium is accumulated is formed at a boundary between the metallic oxide layer and the metal layer.Type: ApplicationFiled: September 5, 2013Publication date: March 13, 2014Applicant: ADVANCED INTERCONNECT MATERIALS, LLCInventors: Junichi KOIKE, Mayumi NAITO, Pilsang YUN, Hideaki KAWAKAMI
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Publication number: 20130168671Abstract: An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced. A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103, and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107, wherein the intermediate layer 106 includes a first region 106a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106b whose indium atomic concentration is less than that of the first region.Type: ApplicationFiled: June 30, 2011Publication date: July 4, 2013Applicant: ADVANCED INTERCONNECT MATERIALS, LLCInventors: Junichi Koike, Pilsang Yun, Hideaki Kawakami
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Patent number: 8451394Abstract: The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.Type: GrantFiled: April 20, 2010Date of Patent: May 28, 2013Assignee: Altiam Services Ltd. LLCInventors: Junichi Koike, Hideaki Kawakami
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Publication number: 20130112972Abstract: Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor 10 of the present invention includes a semiconductor layer 4 composed of oxide semiconductor, a source electrode 5 and a drain electrode 6 that are layers composed mainly of copper, and oxide reaction layers 22 provided between the semiconductor layer 4 and each of the source electrode 5 and drain electrode 6, and high-conductance layers 21 provided between the oxide reaction layers 22 and semiconductor layer 4.Type: ApplicationFiled: January 2, 2013Publication date: May 9, 2013Applicant: ADVANCED INTERCONNECT MATERIALS, LLCInventors: Junichi KOIKE, Pilsang YUN, Hideaki KAWAKAMI
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Publication number: 20120267628Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.Type: ApplicationFiled: April 23, 2012Publication date: October 25, 2012Inventors: Junichi Koike, Hideaki Kawakami
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Patent number: 8164701Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.Type: GrantFiled: August 13, 2009Date of Patent: April 24, 2012Assignee: Advanced Interconnect Materials, LLC.Inventors: Junichi Koike, Hideaki Kawakami
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Patent number: 8089158Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.Type: GrantFiled: May 29, 2009Date of Patent: January 3, 2012Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Hideaki Kawakami
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Patent number: 8084860Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.Type: GrantFiled: September 23, 2009Date of Patent: December 27, 2011Assignee: Advanced Interconnect Materials, LLCInventors: Junichi Koike, Hideaki Kawakami
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Patent number: 7782413Abstract: The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.Type: GrantFiled: May 9, 2007Date of Patent: August 24, 2010Assignees: Tohoku University, Advanced Interconnect Materials LLCInventors: Junichi Koike, Hideaki Kawakami
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Publication number: 20100201901Abstract: The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.Type: ApplicationFiled: April 20, 2010Publication date: August 12, 2010Applicants: Tohoku University, Advanced Interconnect Materials, LLCInventors: Junichi Koike, Hideaki Kawakami
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Publication number: 20100045887Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.Type: ApplicationFiled: August 13, 2009Publication date: February 25, 2010Applicants: Tohoku University, Advanced Interconnect Materials, LLCInventors: Junichi Koike, Hideaki Kawakami
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Publication number: 20100018614Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.Type: ApplicationFiled: September 23, 2009Publication date: January 28, 2010Applicants: Tohoku University, Advanced Interconnect Materials, LLCInventors: Junichi Koike, Hideaki Kawakami
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Patent number: 7642552Abstract: A liquid crystal display device including gate wiring or a gate electrode formed on a substrate on a TFT side of the TFT liquid crystal display device, wherein the wiring or the electrode has a structure of being held between two different insulation layers or insulators, and the structure is comprised of a first layer mainly consisting of copper and a second layer consisting of an oxide covering an outer circumferential part of the first layer, further, the second layer has compositional formula of CuxMnySizO (0<X<Y, 0<Z<Y).Type: GrantFiled: January 12, 2007Date of Patent: January 5, 2010Assignees: Tohoku University, Advanced Interconnect Materials, LLCInventors: Junichi Koike, Hideaki Kawakami
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Patent number: 7633164Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.Type: GrantFiled: April 10, 2007Date of Patent: December 15, 2009Assignees: Tohoku University, Advanced Interconnect Materials LLCInventors: Junichi Koike, Hideaki Kawakami