Patents by Inventor Hideaki Kawakami

Hideaki Kawakami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9256110
    Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: February 9, 2016
    Assignee: Xenogenic Development Limited Liability Company
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 9123821
    Abstract: To make it possible to form a metal electrode of low electrical contact resistance on a conductive indium-containing oxide semiconductor layer constituting a device active layer of a thin-film transistor or the like. Between an indium-containing oxide semiconductor layer and a metal electrode layer provided above this layer for passing device operating current, which can reduce indium oxide or the like of the oxide semiconductor layer. A metallic oxide layer and a metal layer are formed using as material a metal film including an easily oxidable metal, and further an indium-rich layer in which reduced indium is accumulated is formed at a boundary between the metallic oxide layer and the metal layer.
    Type: Grant
    Filed: September 5, 2013
    Date of Patent: September 1, 2015
    Assignee: Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Mayumi Naito, Pilsang Yun, Hideaki Kawakami
  • Patent number: 8895978
    Abstract: An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced. A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103, and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107, wherein the intermediate layer 106 includes a first region 106a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106b whose indium atomic concentration is less than that of the first region.
    Type: Grant
    Filed: June 30, 2011
    Date of Patent: November 25, 2014
    Assignee: Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Pilsang Yun, Hideaki Kawakami
  • Patent number: 8866140
    Abstract: Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor 10 of the present invention includes a semiconductor layer 4 composed of oxide semiconductor, a source electrode 5 and a drain electrode 6 that are layers composed mainly of copper, and oxide reaction layers 22 provided between the semiconductor layer 4 and each of the source electrode 5 and drain electrode 6, and high-conductance layers 21 provided between the oxide reaction layers 22 and semiconductor layer 4.
    Type: Grant
    Filed: January 2, 2013
    Date of Patent: October 21, 2014
    Assignee: Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Pilsang Yun, Hideaki Kawakami
  • Publication number: 20140225119
    Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
    Type: Application
    Filed: February 12, 2014
    Publication date: August 14, 2014
    Applicant: Altiam Services Ltd. LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 8681282
    Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
    Type: Grant
    Filed: April 23, 2012
    Date of Patent: March 25, 2014
    Assignee: Altiam Services Ltd. LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Publication number: 20140070207
    Abstract: To make it possible to form a metal electrode of low electrical contact resistance on a conductive indium-containing oxide semiconductor layer constituting a device active layer of a thin-film transistor or the like. Between an indium-containing oxide semiconductor layer and a metal electrode layer provided above this layer for passing device operating current, which can reduce indium oxide or the like of the oxide semiconductor layer. A metallic oxide layer and a metal layer are formed using as material a metal film including an easily oxidable metal, and further an indium-rich layer in which reduced indium is accumulated is formed at a boundary between the metallic oxide layer and the metal layer.
    Type: Application
    Filed: September 5, 2013
    Publication date: March 13, 2014
    Applicant: ADVANCED INTERCONNECT MATERIALS, LLC
    Inventors: Junichi KOIKE, Mayumi NAITO, Pilsang YUN, Hideaki KAWAKAMI
  • Publication number: 20130168671
    Abstract: An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced. A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103, and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107, wherein the intermediate layer 106 includes a first region 106a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106b whose indium atomic concentration is less than that of the first region.
    Type: Application
    Filed: June 30, 2011
    Publication date: July 4, 2013
    Applicant: ADVANCED INTERCONNECT MATERIALS, LLC
    Inventors: Junichi Koike, Pilsang Yun, Hideaki Kawakami
  • Patent number: 8451394
    Abstract: The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.
    Type: Grant
    Filed: April 20, 2010
    Date of Patent: May 28, 2013
    Assignee: Altiam Services Ltd. LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Publication number: 20130112972
    Abstract: Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor 10 of the present invention includes a semiconductor layer 4 composed of oxide semiconductor, a source electrode 5 and a drain electrode 6 that are layers composed mainly of copper, and oxide reaction layers 22 provided between the semiconductor layer 4 and each of the source electrode 5 and drain electrode 6, and high-conductance layers 21 provided between the oxide reaction layers 22 and semiconductor layer 4.
    Type: Application
    Filed: January 2, 2013
    Publication date: May 9, 2013
    Applicant: ADVANCED INTERCONNECT MATERIALS, LLC
    Inventors: Junichi KOIKE, Pilsang YUN, Hideaki KAWAKAMI
  • Publication number: 20120267628
    Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
    Type: Application
    Filed: April 23, 2012
    Publication date: October 25, 2012
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 8164701
    Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
    Type: Grant
    Filed: August 13, 2009
    Date of Patent: April 24, 2012
    Assignee: Advanced Interconnect Materials, LLC.
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 8089158
    Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: January 3, 2012
    Assignee: Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 8084860
    Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.
    Type: Grant
    Filed: September 23, 2009
    Date of Patent: December 27, 2011
    Assignee: Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 7782413
    Abstract: The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.
    Type: Grant
    Filed: May 9, 2007
    Date of Patent: August 24, 2010
    Assignees: Tohoku University, Advanced Interconnect Materials LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Publication number: 20100201901
    Abstract: The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.
    Type: Application
    Filed: April 20, 2010
    Publication date: August 12, 2010
    Applicants: Tohoku University, Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Publication number: 20100045887
    Abstract: In a liquid crystal display (LCD) device having a thin film transistor (TFT), the TFT includes a source electrode, a drain electrode and a semiconductor layer. At least one of the source electrode and drain electrode includes a first layer including copper and a second layer forming an oxide layer and covering the first layer. The semiconductor layer has a substantially linear current-voltage relationship with said source electrode or drain electrode including said first and second layers, when a voltage is applied between the semiconductor layer and said source electrode or drain electrode.
    Type: Application
    Filed: August 13, 2009
    Publication date: February 25, 2010
    Applicants: Tohoku University, Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Publication number: 20100018614
    Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.
    Type: Application
    Filed: September 23, 2009
    Publication date: January 28, 2010
    Applicants: Tohoku University, Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 7642552
    Abstract: A liquid crystal display device including gate wiring or a gate electrode formed on a substrate on a TFT side of the TFT liquid crystal display device, wherein the wiring or the electrode has a structure of being held between two different insulation layers or insulators, and the structure is comprised of a first layer mainly consisting of copper and a second layer consisting of an oxide covering an outer circumferential part of the first layer, further, the second layer has compositional formula of CuxMnySizO (0<X<Y, 0<Z<Y).
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: January 5, 2010
    Assignees: Tohoku University, Advanced Interconnect Materials, LLC
    Inventors: Junichi Koike, Hideaki Kawakami
  • Patent number: 7633164
    Abstract: The present invention includes a liquid crystal display device having an oxide film having high adhesiveness to a substrate to thereby prevent oxidation of a wiring material or the like, and includes, an electrode or a terminal electrode having high conductivity, and a manufacturing method therefor. Consequently, in the present invention, a liquid crystal display device has an electrode terminal of a TFT substrate, wherein the electrode is formed on an insulator and is comprised of a conductive layer mainly consisting of copper and an oxide covering an outer part, further the oxide is a layered structure of transparent electrodes, the layered portion having ohmic contact, and the oxide mainly consists of manganese oxide.
    Type: Grant
    Filed: April 10, 2007
    Date of Patent: December 15, 2009
    Assignees: Tohoku University, Advanced Interconnect Materials LLC
    Inventors: Junichi Koike, Hideaki Kawakami