Abstract: Provided is an apparatus for inspecting the back surface of an epitaxial wafer, capable of detecting defects in the back surface of an epitaxial wafer. An epitaxial wafer back surface inspection apparatus has an optical system including an annular fiber optic illuminator and an imaging unit which are placed perpendicular to the back surface of an epitaxial wafer; and a scanning unit operating the optical system in parallel with the back surface to scan the back surface. A light source of the annular fiber optic illuminator is composed of either blue LEDs or red LEDs.

Abstract: Provided is an apparatus for inspecting the back surface of an epitaxial wafer, capable of detecting defects in the back surface of an epitaxial wafer. An epitaxial wafer back surface inspection apparatus has an optical system including an annular fiber optic illuminator and an imaging unit which are placed perpendicular to the back surface of an epitaxial wafer; and a scanning unit operating the optical system in parallel with the back surface to scan the back surface. A light source of the annular fiber optic illuminator is composed of either blue LEDs or red LEDs.

Abstract: Since vapor-phase growth of an epitaxial film is performed on the surface of a mirror surface silicon wafer which is not subjected to final polishing, and the surface of the epitaxial film is thereafter subjected to HCl gas etching, the mirror polishing step is simplified, and the productivity is improved, that enables a reduction in cost, and it is possible to suppress the surface roughness of the epitaxial film as well.

Abstract: A susceptor for epitaxial layer forming apparatus provided in a layer forming chamber of an epitaxial layer forming apparatus includes: a recessed portion which is provided to accommodate a semiconductor wafer therein and has an approximately circular shape in plan view; and a protruding portion which is provided in the recessed portion in order to support the semiconductor wafer and has an approximately circular shape in plan view. The diameter of the protruding portion is smaller than that of the recessed portion, and the diameter of the protruding portion is set to be a size allowing reaction gas supplied for vapor-phase growth reaction to circulate through an entire boundary between the protruding portion and the semiconductor wafer when the semiconductor wafer is placed in the recessed portion.