Abstract: A server apparatus is connected to a printer in a communicable manner. The printer includes a first printer and other printers. The server apparatus includes a first acquisition section that acquires, when an error occurs in the first printer, error occurrence information indicating that the error has occurred from the first printer, a second acquisition section that acquires, when the error occurrence information is acquired, a first action log indicating the printing action of the first printer, and a normal action log indicating the printing actions of the other printers, which perform the printing actions normally, a comparator that compares the first action log with the normal action log, and an estimator that estimates an item relating to the error from the items contained in the first action log based on the result of the comparison performed by the comparator.

Abstract: A server device is a server device to be coupled to a printer so as to be able to communicate with each other, including an instruction unit configured to transmit a second instruction of making the printer perform a printing operation when an error occurs in the printer, and a first acquisition unit configured to make the printer generate a first operation log as a log related to the printing operation based on the second instruction, and obtain the first operation log from the printer.

Abstract: There is provided a semiconductor device including a first electrode including a first plate portion, the first plate portion including a first surface and a second surface facing the first surface, a plurality of semiconductor chips provided above the second surface, and a second electrode including a second plate portion provided above the semiconductor chips, the second plate portion including a third surface facing the second surface and a fourth surface facing the third surface, the second plate portion including a plurality of protrusion portions provided between the semiconductor chips and the third surface, the protrusion portions being connected to the third surface, each of the protrusion portions including a top surface including the same shape as a shape of each of the semiconductor chips in a plane parallel to the second surface, the second plate portion including a second outer diameter larger than a first diameter of a smallest circle circumscribing the protrusion portions provided on an outerm

Abstract: A semiconductor device includes a semiconductor chip comprising a first and second terminal surfaces. An insulator surrounds an outer circumference of a side surface of the chip. A reinforcing-member is arranged between the side surface of the chip and an inner side surface of the insulator and surrounds the outer circumference of the side surface of the chip. A first and second holders hold the reinforcing-member therebetween at a top and bottom surfaces of the reinforcing-member. The first and second holders comprise protrusions facing an inner wall surface of the reinforcing-member, and the when ?1in represents an inner-diameter of parts of the reinforcing-member opposing to the protrusions, ?1out represents an outer-diameter of the reinforcing-member, ?2 represents an outer-diameter of the protrusion of either the first or the second holder, and ?3 represents an inner diameter of the insulator, the following Expression 1 is satisfied ?1in??2<?1out.

Abstract: A semiconductor device, such as a pressure contact type semiconductor device, includes a frame body comprising ceramic and having an annular cylindrical shape which satisfies a relationship: (2/5E)·(D/t)3?17.4, when the inner diameter of the frame body is D (in mm), the thickness of the frame body in a radial direction is t (in mm), and the Young's modulus of the ceramic is E (in GPa). A plurality of semiconductor elements are enclosed within an interior spaced formed by at least the frame body, a first electrode block disposed on one side of the semiconductor elements, and a second electrode block disposed on another side of the semiconductor elements.

Abstract: A semiconductor device includes a semiconductor chip comprising a first and second terminal surfaces. An insulator surrounds an outer circumference of a side surface of the chip. A reinforcing-member is arranged between the side surface of the chip and an inner side surface of the insulator and surrounds the outer circumference of the side surface of the chip. A first and second holders hold the reinforcing-member therebetween at a top and bottom surfaces of the reinforcing-member. The first and second holders comprise protrusions facing an inner wall surface of the reinforcing-member, and the when ?1in represents an inner-diameter of parts of the reinforcing-member opposing to the protrusions, ?1out represents an outer-diameter of the reinforcing-member, ?2 represents an outer-diameter of the protrusion of either the first or the second holder, and ?3 represents an inner diameter of the insulator, the following Expression 1 is satisfied ?1in??2<?3-?1out.

Abstract: A semiconductor device includes a substrate joined to a base by a first junction material and a semiconductor element joined to the substrate by a second junction material. At least one of the first and second junction materials comprises tin, antimony, and cobalt. In some embodiments, the junction materials comprise cobalt having a weight percentage between 0.05 wt % and 0.2 wt %, antimony with a weight percentage between 1 wt % and 10 wt %, and the balance being substantially tin.

Abstract: According to one embodiment, in a method of testing a semiconductor device, the semiconductor device has a semiconductor element and a substrate which are bonded by bonding material including metal fine particles. Image data of a heat distribution in the semiconductor device are temporally acquired while heating the semiconductor device. A time change of a fractal dimension based on the image data is calculated. An inclination of the time change of the fractal dimension is calculated. The inclination and a reference inclination set in advance are compared. Whether or not the semiconductor device is good is determined.

Abstract: According to one embodiment, between the mounting substrate and the semiconductor chip, there is a joint support layer including a metal or its alloy selected from the group of Cu, Al, Ag, Ni, Cr, Zr and Ti and a melt layer laminated across the joint support layer, and formed of a metal selected from the group of Sn, Zn and In or of an alloy of at least two metals selected from the same metals. The process of joining the mounting substrate and the semiconductor chip includes intervening a joining layer which is formed, at least for its outermost layer, by the melt layer, maintaining the temperature to be higher than the melting point of the melt layer, then forming an alloy layer which has a higher melting point than the melt layer by liquid phase diffusion.

Abstract: An electrode is steeped in a solution of Mg and B and a negative voltage is applied to the electrode so as to precipitate superconductive MgB2 on the electrode. Superconductive MgB2 is easily manufactured in various forms and at low costs without any special device.

Abstract: A very small amount of copper chloride or zinc oxide is added to a mixture of magnesium chloride, potassium chloride, sodium chloride and magnesium borate, a mixed salt is melted under heat, electrodes are inserted into a molten salt and a metallic material employed as a cathode is electroplated with a magnesium diboride (MgB2) film.

Abstract: A multi-chip press-connected type semiconductor device comprises: a plurality of active element chips to control an electric current flowing in one direction; a plurality of diode chips that transmit the current in a direction opposite to the current transmitting direction of said active element chip; and electrode plates for said active element chip and for said diode chip, said electrode plates pressing from above and under with said plurality of active element chips and said plurality of diode chips being interposed therebetween; wherein said diode chips are disposed in all of outermost peripheral chip positions with no-existence of other chips adjacent to at least one side of a chip in a chip disposing region, and are disposed in internal layout positions surrounded with the outermost peripheral chip positions, and said diode chips to be disposed in the internal layout positions are arranged in order of a total number of other chips from the smallest that exist adjacently to at least one of a side and a v

Abstract: A method for electrochemical synthesis of a superconducting boron compound MgB2 which comprises the steps of preparing a powder mixture of magnesium chloride, sodium chloride, potassium chloride and magnesium borate, drying the mixture by electrical heating at a temperature of 400° C. or below under an inert gas atmosphere, and further heating the mixture electrically at a temperature of 400° C. or above so that it is melted and undergoes chemical reaction.

Abstract: A multi-chip press-connected type semiconductor device comprises: a plurality of active element chips to control an electric current flowing in one direction; a plurality of diode chips that transmit the current in a direction opposite to the current transmitting direction of said active element chip; and electrode plates for said active element chip and for said diode chip, said electrode plates pressing from above and under with said plurality of active element chips and said plurality of diode chips being interposed therebetween; wherein said diode chips are disposed in all of outermost peripheral chip positions with no-existence of other chips adjacent to at least one side of a chip in a chip disposing region, and are disposed in internal layout positions surrounded with the outermost peripheral chip positions, and said diode chips to be disposed in the internal layout positions are arranged in order of a total number of other chips from the smallest that exist adjacently to at least one of a side and a v

Abstract: A very small amount of copper chloride or zinc oxide is added to a mixture of magnesium chloride, potassium chloride, sodium chloride and magnesium borate, a mixed salt is melted under heat, electrodes are inserted into a molten salt and a metallic material employed as a cathode is electroplated with a magnesium diboride (MgB2) film.

Abstract: An electrode is steeped in a solution of Mg and B and a negative voltage is applied to the electrode so as to precipitate superconductive MgB2 on the electrode. Superconductive MgB2 is easily manufactured in various forms and at low costs without any special device.

Abstract: Provided a pressure-contact type semiconductor device including: a plurality of semiconductor chips; a heat buffer plate provided on one surface side of the plural semiconductor chips; and a metal electrode plate provided on the heat buffer plate on a side opposite the plural semiconductor chips, a surface thereof at any position not facing the plural semiconductor chips on the heat buffer plate side having a region which alleviates elastic deformation of the heat buffer plate. Also provided is a pressure-contact type semiconductor device including: a plurality of semiconductor chips; a heat buffer plate provided on one surface side of the plural semiconductor chips; and a metal electrode plate provided on the heat buffer plate on a side opposite the plural semiconductor chips, a peripheral shape thereof extending beyond and thus being larger than a peripheral shape of the heat buffer plate.

Abstract: A method for electrochemical synthesis of a superconducting boron compound MgB2 which comprises the steps of preparing a powder mixture of magnesium chloride, sodium chloride, potassium chloride and magnesium borate, drying the mixture by electrical heating at a temperature of 400° C. or below under an inert gas atmosphere, and further heating the mixture electrically at a temperature of 400° C. or above so that it is melted and undergoes chemical reaction.

Abstract: A new boron-carbon system superconductive substance has a nominal composition expressed R.sub.3 M.sub.4-x B.sub.4-y C.sub.3-z (where R is at least one element selected from the group consisting of Y, Sc and lanthanide series elements, M is at least one metal element categorized in VIII group of periodic table, and 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z<3, except a case of x=y=1 and z=0).