Abstract: A charged particle beam exposure equipment includes an exposure module for exposing a resist film, to which an antistatic film is adhered, by means of irradiating a charged particle beam on the resist film, and a post-exposure wafer processing module for process a post-exposure wafer, which includes antistatic film removing means which detaches the antistatic film after exposure; baking means which causes the wafer to undergo a baking process; and post-exposure wafer process controlling means which transfers the post-exposure wafer to the antistatic film removing means, and which causes the antistatic film removing means to remove the antistatic film from the post-exposure wafer, thereafter transferring the resultant wafer to the baking means.

Abstract: The present invention relates to a multicolumn electron-beam lithography system. An object of the present invention is to realize, at low cost, a multicolumn electron-beam lithography system capable of concurrently exposing chips on one wafer. The multicolumn electron-beam lithography system has a plurality of columns (8-1, 8-2, 8-3, 8-4) each includes a main deflector (16), and a sub deflector (14). The main deflector offers a large magnitude of deflection. The sub deflector offers a small magnitude of deflection. The plurality of columns irradiates an electron beam to a sample while deflecting it according to main deflector-related data (62) and sub deflector-related data (61). Herein, the plurality of columns concurrently draws a pattern on one wafer (50). The multicolumn electron-beam lithography system further includes a deviation memory (63) and a correction unit (64). Deviations of the optical axes of the columns measured in advance are stored in the deviation memory.