Abstract: A medical information processing apparatus comprises an obtaining unit that obtains medical information, a learning unit that performs learning on a function of the medical information processing apparatus using the medical information, an evaluation data holding unit that holds evaluation data in which a correct answer to be obtained by executing the function is known, the evaluation data being for evaluating a learning result of the learning unit, an evaluating unit that evaluates a learning result obtained through learning, based on the evaluation data, and an accepting unit that accepts an instruction to apply a learning result of the learning unit to the function.

Abstract: A molding base material has at least a fiber-reinforced resin prepreg layer, a fiber paper layer, and a partition layer interposed between the prepreg layer and the fiber paper layer; a molded product obtained using the same; and a production method therefor. The resulting product makes it possible to achieve high thermal resistance and heat insulation as well as improved overall space efficiency and weight reduction in a fiber-reinforced resin molded product.

Abstract: A method is provided for manufacturing a polyimide fiber paper intermediate structure, which includes: a short fiber preparing step for preparing shaved short fibers of a non-thermoplastic polyimide; and an intermediate structure forming step for forming a polyimide fiber paper intermediate structure in which the short fibers are temporarily bonded using a water-soluble and/or water-insoluble thermoplastic polymer having a melting point lower than a glass transition point of a polyimide.

Abstract: To provide a method for producing an amidinate metal complex which is represented by [R1—N—C(R3)—N—R2]nM in cost saving and simple manner. A method for producing an amidinate metal complex represented by [R1—N—C(R3)—N—R2]nM including: a first step in which R3X is reacted with a metal Li in a solvent to obtain R3Li solution with LiX suspended therein; a second step in which the R3Li solution with LiX existing therein is reacted with R1—N?C?N—R2 to obtain a [R1—N—C(R3)—N—R2]Li solution with the LiX suspended therein; a third step in which the [R1—N—C(R3)—N—R2]Li solution with the LiX existing therein is reacted with MX to obtain an amidinate metal complex solution, represented by the [R1—N—C(R3)—N—R2]nM, with the LiX suspended therein; and a fourth step for removing the LiX in the solution obtained by the third step.

Abstract: A polyimide fiber paper-manufacturing method is provided that includes a short fiber-preparing step in which shaved short fibers of a non-thermoplastic polyimide are prepared, and a provisionally-bonded paper-forming step in which the short fibers are mixed with water-soluble polymers which are a material having a decomposition temperature lower than a glass transition point of polyimide, and subjected to wet-papermaking to form provisionally-bonded paper.

Abstract: A purpose of the invention is to provide a novel compound. The novel compound is represented by M[i-C3H7NC(R)N-i-C3H7]2 (where, M=Co or Fe; R=n-C3H7 or i-C3H7) that is a liquid under 25° C. (at 1 atmospheric pressure).

Abstract: A polyimide fiber paper-manufacturing method is provided that includes a short fiber-preparing step in which shaved short fibers of a non-thermoplastic polyimide are prepared, and a provisionally-bonded paper-forming step in which the short fibers are mixed with water-soluble polymers which are a material having a decomposition temperature lower than a glass transition point of polyimide, and subjected to wet-papermaking to form provisionally-bonded paper.

Abstract: A semiconductor device includes a semiconductor chip; a substrate including a first region where the semiconductor chip is mounted and a second region separated from the first region; a conductive member provided at a second face of the substrate, the second face of the substrate is a face opposite to a first face to which the semiconductor chip is mounted; a protecting member, provided at the second face of the substrate to cover the conductive member, and including an opening partially exposing a portion of the conductive member placed at the second region; and an external connection terminal connected to the conductive member through the opening. The protecting member contacts the substrate at a portion corresponding to an outer edge of the first region.

Abstract: The present disclosure provides a semiconductor device including: a semiconductor chip; a substrate including a first region where the semiconductor chip is mounted and a second region separated from the first region; a conductive member provided at a second face of the substrate, the second face of the substrate is a face opposite to a first face to which the semiconductor chip is mounted; a protecting member, provided at the second face of the substrate to cover the conductive member, and including an opening partially exposing a portion of the conductive member placed at the second region; and an external connection terminal connected to the conductive member through the opening, wherein the protecting member contacts the substrate at a portion corresponding to an outer edge of the first region.

Abstract: A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.

Abstract: The present invention is directed to a method for forming a copper-based film on a substrate in supercritical fluid, wherein (N,N?-Diisopropylpropion amidinate) copper dimer is dissolved in supercritical fluid and copper is deposited on the substrate to form the copper-based film thereon.

Abstract: To provide a coverlay for a high-frequency circuit substrate, that uses polyimide film and fluororesin, has excellent mechanical properties and heat resistance, and can increase workability during the manufacture of high-frequency circuit substrates. Resolution Means: The coverlay for a high-frequency circuit substrate including a polyimide film and a fluororesin bonded together, and an adhesive strength between the polyimide film layer and the fluororesin layer being greater than 3.0 N/cm.

Abstract: A present invention provide a technique for easily forming a high-quality cobalt base film, which have a small specific resistance. The present invention comprises a transportation process of a Co[i-C3H7NC(C2H5)N-i-C3H7]2, and a film formation process by decomposition of the Co[i-C3H7NC(C2H5)N-i-C3H7]2. The film formation process comprises at least a first film formation process and a second film formation process. In the first film formation process, a film formation chamber is supplied with at least NH3 and/or NH3 product compound, and is not virtually supplied with H2. In the second film formation process, the film formation chamber is supplied with at least NH3 and/or NH3 product compound, and H2. An internal pressure of the film formation chamber in the first film formation process is higher than an internal pressure of the film formation chamber in the second film formation process.

Abstract: A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese.

Abstract: An interlayer insulating film enabling an enhancement in a signal processing speed to be obtained, of which a dielectric constant is 2.2 or less. There is provided a method of forming a film on a substrate in accordance with a chemical vapor deposition process, comprising: the feeding step of feeding (c-C5H9)2Si(OCH3)2 by inert gas bubbling; and the deposition step of causing any of decomposition product resulting from decomposition of the (c-C5H9)2Si(OCH3)2 fed in the above feeding step to deposit on the substrate.

Abstract: A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.

Abstract: A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.

Abstract: An underlayer film-forming material for copper, a method for forming the underlayer, an underlayer film for copper, and a semiconductor device including a substrate, the underlayer and copper wiring film, which prevents copper diffusion as well as provides superior adhesion to a copper wiring film, even if the film is thinner than conventional barrier metals. The underlayer film-forming material for copper is formed from a compound represented by a (R1R2)P—(R)n—Si(X1X2X3), wherein at least one of X1, X2, and X3 represents a hydrolysable group; each of R1 and R2 represents an alkyl group; R represents a divalent linear organic group which is selected from an alkylene group, an aromatic ring, and an alkylene group including an aromatic ring; and n is an integer from 1 to 6.

Abstract: A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminoditungsten, a hexaethylmethylaminoditungsten, and a hexadiethylaminoditungsten.

Abstract: A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.