Abstract: A recording apparatus includes a conveyance unit that conveys a recording medium in a first direction toward a recording head for ejecting a liquid, a tank including a containing chamber containing the liquid to be supplied to the recording head, and an injection port through which the liquid is injected into the containing chamber, the tank being disposed downstream of the conveyance unit in the first direction, a rotatable lever that holds a tank cap for closing the injection port, and a cover that rotates about a rotation shaft between an open position for exposing the lever and a closed position for covering the lever, the rotation shaft being disposed upstream of the conveyance unit in the first direction. The cover includes a sliding portion that is provided on a surface facing the lever and comes into contact with the lever while the cover is rotating toward the closed position.

Abstract: A recording apparatus includes a tank including a chamber configured to store liquid to be supplied to a recording head that ejects the liquid and a filling port from which the liquid is injected into the chamber, and an injection auxiliary member configured to assist injecting of the liquid into the chamber from the filling port, the injection auxiliary member including a first and a second flow channels each defined by a first or a second upper end portion that opens toward outside of the tank and a first or a second lower end portion that opens toward inside of the tank, wherein the second flow channel has an expansion portion arranged in a middle portion between the second upper end portion and the second lower end portion and configured to form a step to expand a cross-sectional area.

Abstract: A nitride semiconductor device is provided, comprising: a first nitride semiconductor layer of a first conductivity-type; a second nitride semiconductor layer of a second conductivity-type provided above the first nitride semiconductor layer; a junction region of a first conductivity-type which is provided to extend in a direction from a front surface of the second nitride semiconductor layer to the first nitride semiconductor layer and has a doping concentration NJFET equal to or higher than that of the first nitride semiconductor layer; and a source region of a first conductivity-type which is provided more shallowly than the junction region and has a doping concentration equal to or higher than the doping concentration NJFET, wherein a dopant of the source region is an element with an atomic weight larger than that of a dopant in the junction region.

Abstract: A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a distance between a depth position at which an atomic composition of nitrogen element constituting the gallium nitride based semiconductor layer is ½ relative to that at a position on the GaN based semiconductor layer side sufficiently away from the transition layer, and a depth position at which an atomic composition of a metal element is ½ of a value of a maximum if an atomic composition of the metal element constituting an insulating layer has the maximum, or a depth position at which an atomic composition of the metal element is ½ relative to that at a position on the insulating layer side sufficiently away from the transition layer if not having the maximum.

Abstract: A nitride semiconductor device is provided, comprising: a first nitride semiconductor layer of a first conductivity-type; a second nitride semiconductor layer of a second conductivity-type provided above the first nitride semiconductor layer; a junction region of a first conductivity-type which is provided to extend in a direction from a front surface of the second nitride semiconductor layer to the first nitride semiconductor layer and has a doping concentration NJFET equal to or higher than that of the first nitride semiconductor layer; and a source region of a first conductivity-type which is provided more shallowly than the junction region and has a doping concentration equal to or higher than the doping concentration NJFET, wherein a dopant of the source region is an element with an atomic weight larger than that of a dopant in the junction region.

Abstract: A nitride semiconductor device includes a transistor having a channel region in a gallium nitride-based semiconductor layer. The transistor includes: a gate insulating film provided above the gallium nitride-based semiconductor layer; an intermediate layer arranged between the gallium nitride-based semiconductor layer and the gate insulating film, having a band gap smaller than that of the gate insulating film, and having a band offset with the gallium nitride-based semiconductor layer; a gate electrode provided on the gate insulating film; a first conductivity type source region provided in the gallium nitride-based semiconductor layer; and a source electrode provided on the gallium nitride-based semiconductor layer and being in contact with the source region. The intermediate layer is arranged at a position opposed to the gate electrode through the gate insulating film and avoids a source contact region in which the source electrode is in contact with the source region.

Abstract: In a case where a semiconductor layer is epitaxially grown on a step shape formed due to CBL (current blocking layer) formation, the crystallinity of the semiconductor layer lowers. Also, a GaN layer that is epitaxially regrown on the CBL is not formed continuously by epitaxial growth, and therefore the crystallinity of the GaN layer lowers. A vertical semiconductor device manufacturing method is provided that comprises: a step of epitaxially growing a gallium nitride-based n-type semiconductor layer on a gallium nitride-based semiconductor substrate; a step of epitaxially growing a gallium nitride-based p-type semiconductor layer on the n-type semiconductor layer; and a step of ion-implanting p-type impurities to form a p+-type embedded region selectively in a predetermined depth range across the boundary between the n-type semiconductor layer and the p-type semiconductor layer.

Abstract: A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a distance between a depth position at which an atomic composition of nitrogen element constituting the gallium nitride based semiconductor layer is ½ relative to that at a position on the GaN based semiconductor layer side sufficiently away from the transition layer, and a depth position at which an atomic composition of a metal element is ½ of a value of a maximum if an atomic composition of the metal element constituting an insulating layer has the maximum, or a depth position at which an atomic composition of the metal element is ½ relative to that at a position on the insulating layer side sufficiently away from the transition layer if not having the maximum.

Abstract: There is a problem that even if impurities are made to thermally diffuse in a temperature range of 700° C.-1150° C., a good ohmic contact cannot be formed in a p-type group-III nitride semiconductor layer. Provided is a semiconductor device manufacturing method having a group-III nitride semiconductor substrate and a p-type group-III nitride semiconductor layer on the group-III nitride semiconductor substrate, including forming a magnesium containing layer on and in direct contact with the p-type group-III nitride semiconductor layer; and annealing the p-type group-III nitride semiconductor layer at a temperature more than or equal to 1300° C. to form a p+-type region which contains magnesium as an impurity in the p-type group-III nitride semiconductor layer located immediately below the magnesium containing layer.

Abstract: In a case where a semiconductor layer is epitaxially grown on a step shape formed due to CBL (current blocking layer) formation, the crystallinity of the semiconductor layer lowers. Also, a GaN layer that is epitaxially regrown on the CBL is not formed continuously by epitaxial growth, and therefore the crystallinity of the GaN layer lowers. A vertical semiconductor device manufacturing method is provided that comprises: a step of epitaxially growing a gallium nitride-based n-type semiconductor layer on a gallium nitride-based semiconductor substrate; a step of epitaxially growing a gallium nitride-based p-type semiconductor layer on the n-type semiconductor layer; and a step of ion-implanting p-type impurities to form a p+-type embedded region selectively in a predetermined depth range across the boundary between the n-type semiconductor layer and the p-type semiconductor layer.

Abstract: There is a problem that even if impurities are made to thermally diffuse in a temperature range of 700° C.-1150° C., a good ohmic contact cannot be formed in a p-type group-III nitride semiconductor layer. Provided is a semiconductor device manufacturing method having a group-III nitride semiconductor substrate and a p-type group-III nitride semiconductor layer on the group-III nitride semiconductor substrate, including forming a magnesium containing layer on and in direct contact with the p-type group-III nitride semiconductor layer; and annealing the p-type group-III nitride semiconductor layer at a temperature more than or equal to 1300° C. to form a p+-type region which contains magnesium as an impurity in the p-type group-III nitride semiconductor layer located immediately below the magnesium containing layer.

Abstract: A film forming process is performed on a substrate in a deposition chamber. A first electrode is provided in the deposition chamber and is grounded. A second electrode is provided in the deposition chamber to face the first electrode. A radio frequency power supply supplies radio frequency power to the second electrode. A DC power supply supplies a DC bias voltage to the second electrode. A control unit adjusts a bias voltage to be less than the potential of the second electrode when the radio frequency power is supplied, but the bias voltage is not supplied. In this way, it is possible to improve film quality while preventing a reduction in the deposition rate of a film during deposition.

Abstract: A film forming process is performed on a substrate in a deposition chamber. A first electrode is provided in the deposition chamber and is grounded. A second electrode is provided in the deposition chamber to face the first electrode. A radio frequency power supply supplies radio frequency power to the second electrode. A DC power supply supplies a DC bias voltage to the second electrode. A control unit adjusts a bias voltage to be less than the potential of the second electrode when the radio frequency power is supplied, but the bias voltage is not supplied. In this way, it is possible to improve film quality while preventing a reduction in the deposition rate of a film during deposition.

Abstract: A method and an apparatus for forming a hard film, such as a hard carbon film, using only ions in a plasma. A shielding member in the form of a magnet is disposed between a plasma source and a substrate. A plasma CVD method is applied for decomposing a raw material in the plasma. The film is formed from the decomposed material.

Abstract: A magnetic recording medium that is resistant to the spin-off phenomenon caused by high speed rotation is disclosed. The medium has a thin lubricating layer suitable for higher recording density. A manufacturing method for making the magnetic recording medium also is disclosed. The magnetic recording medium is successively laminated with at least a magnetic film, protective film, and lubricating layer on a non-magnetic substrate. The lubricating layer is an average of one molecule or less in thickness and 90% or more of the area of the lubricating layer is not chemically adsorbed to the protective film. Fluorine termination of the protective-film surface prevents the chemical adsorption of lubricant, preventing the formation of a bonded lubricating layer and leaving behind a mobile lubricating layer of approximately one molecule in thickness that is not spun off. The resistance to spin-off is due to the fact that the protective-film surface and the lubricant both consist of carbon fluoride.

Abstract: A carbon protective film of a magnetic recording medium includes a surface region having a high nitrogen concentration. The nitrogen-doped surface region enhances surface energy and improves wettability of the protective film with a liquid lubricant. The nitrogen is implanted by plasma treatment to produce a surface region in the protective film that includes from 6 to 20 at % of nitrogen in the surface region within 30 Å from the film surface. The treatment reduces the contact angle of the film surface with water to the range from of 10 to 30 degrees.

Abstract: The formation of a gap in a magnetic head core or the junction of a thin magnetic film of a metal with an oxide substrate of a magnetic head made of a composite of a thin magnetic film of a metal with an oxide material are conducted by the thermal diffusion between gold layers themselves at a low temperature. Then, chromium or titanium is provided between the gold layer and the junction surface to prevent deterioration of magnetic characteristics and generation of a false gap and, at the same time, to heighten the junction strength. The thermal diffusion between the gold layers themselves is effected at a temperature lower than that of glass fusion to suppress the deterioration of magnetic characteristics, distortion caused by thermal expansion, and diffusion reaction on the interface. The chromium or titanium layer works to maintain function strength between the thin magnetic layer or the oxide substrate and the gold layer.

Abstract: A novel soft magnetic amorphous alloy thin film which, on account of the composition of the film consisting in a combination of a transition metal, a metalloid or semiconducting element, namely B, C or Si and an oxide derived from the starting material, is endowed with a comminuted and dispersed structure of a magnetic amorphous phase and a nonmagnetic amorphous phase. The soft magnetic amorphous alloy thin film may be applied to a magnetic head for short wavelength recording which is required to cope with high frequency characteristics and high coercivity of the recording medium.