Patents by Inventor Hideaki Mogi

Hideaki Mogi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200295088
    Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.
    Type: Application
    Filed: September 7, 2018
    Publication date: September 17, 2020
    Inventors: Yu KATO, Yuta INABA, Masato KANNO, Hideaki MOGI, Miki KIMIJIMA, Sae MIYAJI
  • Publication number: 20200295074
    Abstract: The present disclosure relates to a solid-state image sensor and an electronic apparatus that suppress a decrease in light collection efficiency and degradation in oblique light resistance and enable a reduction in the height of a solid-state image sensor.
    Type: Application
    Filed: March 14, 2017
    Publication date: September 17, 2020
    Inventors: HIDEAKI MOGI, YOHEI HIROSE, SHINTAROU HIRATA, YUYA KUMAGAI, TETSUJI YAMAGUCHI, MASAKI MURATA, YASUHARU UJIIE
  • Publication number: 20200274077
    Abstract: A photoelectric conversion element of the present disclosure includes: a first electrode: a second electrode opposed to the first electrode; and an organic layer provided between the first electrode and the second electrode, and including an organic photoelectric conversion layer, and at least one layer included in the organic layer is formed including at least one kind of organic semiconductor material represented by a general expression (1).
    Type: Application
    Filed: October 30, 2018
    Publication date: August 27, 2020
    Applicants: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yasuharu UJIIE, Yosuke SAITO, Yuta HASEGAWA, Hideaki MOGI, Osamu ENOKI, Yuki NEGISHI
  • Patent number: 10672994
    Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula (1) and a subphthalocyanine derivative represented by the following General formula (2).
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: June 2, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Yoshiaki Obana, Yuki Negishi, Yuta Hasegawa, Ichiro Takemura, Osamu Enoki, Hideaki Mogi, Nobuyuki Matsuzawa
  • Publication number: 20200168815
    Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.
    Type: Application
    Filed: May 7, 2018
    Publication date: May 28, 2020
    Inventors: Yosuke SAITO, Ichiro TAKEMURA, Osamu ENOKI, Yuki NEGISHI, Yuta HASEGAWA, Hideaki MOGI, Yasuharu UJIIE
  • Publication number: 20200161566
    Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.
    Type: Application
    Filed: November 18, 2019
    Publication date: May 21, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yoshiaki OBANA, Yuki NEGISHI, Yuta HASEGAWA, Ichiro TAKEMURA, Osamu ENOKI, Hideaki MOGI, Nobuyuki MATSUZAWA
  • Publication number: 20200119100
    Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).
    Type: Application
    Filed: December 12, 2019
    Publication date: April 16, 2020
    Applicant: SONY CORPORATION
    Inventors: Masaki MURATA, Hideaki MOGI, Shintarou HIRATA, Iwao YAGI, Yasuharu UJIIE, Masashi BANDO, Raku SHIRASAWA, Hajime KOBAYASHI, Mitsunori NAKAMOTO, Yuichi TOKITA
  • Patent number: 10608049
    Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: March 31, 2020
    Assignee: Sony Corporation
    Inventors: Masaki Murata, Hideaki Mogi, Shintarou Hirata, Iwao Yagi, Yasuharu Ujiie, Masashi Bando, Raku Shirasawa, Hajime Kobayashi, Mitsunori Nakamoto, Yuichi Tokita
  • Patent number: 10566548
    Abstract: An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrier blocking layer is formed of a material having the following structural formula (1), and has a thickness of from 5×10?9 to 1.
    Type: Grant
    Filed: April 19, 2016
    Date of Patent: February 18, 2020
    Assignee: Sony Corporation
    Inventors: Yasuharu Ujiie, Masaki Murata, Yuya Kumagai, Hideaki Mogi, Shintarou Hirata
  • Publication number: 20200006435
    Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.
    Type: Application
    Filed: July 3, 2019
    Publication date: January 2, 2020
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yuta HASEGAWA, Nobuyuki MATSUZAWA, Yoshiaki OBANA, Ichiro TAKEMURA, Norikazu NAKAYAMA, Masami SHIMOKAWA, Tetsuji YAMAGUCHI, Iwao YAGI, Hideaki MOGI
  • Publication number: 20190371863
    Abstract: There is provided an imaging device and an electronic apparatus including an imaging device, where the imaging device includes: a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material, where the second organic semiconductor material comprises a subphthalocyanine material, and where the second organic semiconductor material has a highest occupied molecular orbital level ranging from ?6 eV to ?6.7 eV.
    Type: Application
    Filed: November 29, 2017
    Publication date: December 5, 2019
    Applicant: SONY CORPORATION
    Inventors: Yuta HASEGAWA, Masashi BANDO, Shintarou HIRATA, Hideaki MOGI, Iwao YAGI, Yasuharu UJIIE, Yuki NEGISHI
  • Publication number: 20190319072
    Abstract: To provide a photo-electric conversion element in which responsiveness and external quantum efficiency are improved. Provided is an organic photo-electric conversion element including: an organic photo-electric conversion layer sandwiched by a first electrode and a second electrode. The organic photo-electric conversion layer contains organic molecules of a quinacridone (QD) derivative and a subphthalocyanine (SubPc) derivative, and at least the quinacridone derivative out of the organic molecules is in random orientation.
    Type: Application
    Filed: October 24, 2017
    Publication date: October 17, 2019
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Takuya ITO, Yuta HASEGAWA, Hideaki MOGI
  • Publication number: 20190319071
    Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an—upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.
    Type: Application
    Filed: July 20, 2017
    Publication date: October 17, 2019
    Applicants: SONY CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yohei HIROSE, Iwao YAGI, Shintarou HIRATA, Hideaki MOGI, Masashi BANDO, Osamu ENOKI
  • Patent number: 10374015
    Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.
    Type: Grant
    Filed: May 19, 2016
    Date of Patent: August 6, 2019
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Yuta Hasegawa, Nobuyuki Matsuzawa, Yoshiaki Obana, Ichiro Takemura, Norikazu Nakayama, Masami Shimokawa, Tetsuji Yamaguchi, Iwao Yagi, Hideaki Mogi
  • Patent number: 10312457
    Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.
    Type: Grant
    Filed: July 10, 2017
    Date of Patent: June 4, 2019
    Assignee: Sony Semiconductors Solutions Corporation
    Inventors: Yoshiaki Obana, Yuki Negishi, Yuta Hasegawa, Ichiro Takemura, Osamu Enoki, Hideaki Mogi, Nobuyuki Matsuzawa
  • Publication number: 20190157331
    Abstract: An imaging element includes an organic photoelectric conversion layer formed of a mixture of an electron transport material, an organic pigment material, and a hole transport material. The electron transport material has higher electron mobility than the organic pigment material. The hole transport material has higher hole mobility than the organic pigment material. A relation between values of electron affinity of the electron transport material and the organic pigment material, a relation between values of ionization potentials of the hole transport material and the organic pigment material, and a relation between a value of the electron affinity of the electron transport material and a value of an ionization potential of the hole transport material have predetermined relations.
    Type: Application
    Filed: June 27, 2017
    Publication date: May 23, 2019
    Applicant: SONY CORPORATION
    Inventors: Masashi BANDO, Hideaki MOGI, Iwao YAGI, Shintarou HIRATA, Tetsuji YAMAGUCHI
  • Publication number: 20180342627
    Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode 15a and a second electrode 18 facing each other; and a photoelectric conversion layer 17 provided between the first electrode 15a and the second electrode 18, and including a first quinacridone derivative represented by a formula (1).
    Type: Application
    Filed: September 26, 2016
    Publication date: November 29, 2018
    Inventors: Yuta HASEGAWA, Hideaki MOGI, Takuya ITO
  • Publication number: 20180219045
    Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).
    Type: Application
    Filed: July 14, 2016
    Publication date: August 2, 2018
    Inventors: Masaki MURATA, Hideaki MOGI, Shintarou HIRATA, Iwao YAGI, Yasuharu UJIIE, Masashi BANDO, Raku SHIRASAWA, Hajime KOBAYASHI, Mitsunori NAKAMOTO, Yuichi TOKITA
  • Publication number: 20180151624
    Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.
    Type: Application
    Filed: May 19, 2016
    Publication date: May 31, 2018
    Inventors: Yuta HASEGAWA, Nobuyuki MATSUZAWA, Yoshiaki OBANA, Ichiro TAKEMURA, Norikazu NAKAYAMA, Masami SHIMOKAWA, Tetsuji YAMAGUCHI, Iwao YAGI, Hideaki MOGI
  • Publication number: 20180114926
    Abstract: An image sensor includes at least a first electrode, a second electrode, an organic photoelectric conversion layer, and a carrier blocking layer. The carrier blocking layer is formed of a material having the following structural formula (1), and has a thickness of from 5×10?9 to 1.
    Type: Application
    Filed: April 19, 2016
    Publication date: April 26, 2018
    Inventors: Yasuharu UJIIE, Masaki MURATA, Yuya KUMAGAI, Hideaki MOGI, Shintarou HIRATA