Patents by Inventor Hideaki Mogi
Hideaki Mogi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128282Abstract: A semiconductor device (10) according to one aspect of the present disclosure includes: a driving section (40) that drives an object to be driven; an abnormality detecting circuit (30), which is one example of an instruction circuit that outputs an instruction signal to the driving section (40); and a light amount detecting section (20) that detects an amount of incident light and invalidates the instruction signal output from the abnormality detecting circuit (30) in accordance with the amount of incident light.Type: ApplicationFiled: February 16, 2022Publication date: April 18, 2024Inventors: Koichi Okamoto, Hideaki Mogi, Takashi Masuda, Shinichirou Saeki, Mitsushi Tabata
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Publication number: 20240006840Abstract: Provided are a light emitting device capable of providing lenses or light emitting elements on a substrate in a suitable manner, and a method for manufacturing the light emitting device. A light emitting device of the present disclosure includes: a first substrate; a light emitting element provided on a lower surface of the first substrate; a lens provided on an upper surface of the first substrate; a first protrusion provided on the upper surface of the first substrate; and a first film provided on the upper surface of the first substrate, the first film including a first portion disposed on the lens or forming the lens, and a second portion disposed on the first protrusion or forming the first protrusion, in which a height of an uppermost portion of the first portion is equal to or less than a height of an uppermost portion of the second portion.Type: ApplicationFiled: October 29, 2021Publication date: January 4, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Hideaki MOGI, Masashi NAKAMURA, Jun IWASHITA, Hiroshi KATO
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Publication number: 20230329017Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and- an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.Type: ApplicationFiled: May 3, 2023Publication date: October 12, 2023Applicants: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yohei HIROSE, Iwao YAGI, Shintarou HIRATA, Hideaki MOGI, Masashi BANDO, Osamu ENOKI
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Publication number: 20230329082Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.Type: ApplicationFiled: June 6, 2023Publication date: October 12, 2023Applicant: Sony Semiconductor Solutions CorporationInventors: Yoshiaki OBANA, Yuki NEGISHI, Yuta HASEGAWA, Ichiro TAKEMURA, Osamu ENOKI, Hideaki MOGI, Nobuyuki MATSUZAWA
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Publication number: 20230309331Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.Type: ApplicationFiled: May 23, 2023Publication date: September 28, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yuta HASEGAWA, Nobuyuki MATSUZAWA, Yoshiaki OBANA, Ichiro TAKEMURA, Norikazu NAKAYAMA, Masami SHIMOKAWA, Tetsuji YAMAGUCHI, Iwao YAGI, Hideaki MOGI
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Publication number: 20230262998Abstract: There is provided an imaging device and an electronic apparatus including an imaging device, where the imaging device includes: a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material, where the second organic semiconductor material comprises a subphthalocyanine material, and where the second organic semiconductor material has a highest occupied molecular orbital level ranging from ?6 eV to ?6.7 eV.Type: ApplicationFiled: February 7, 2023Publication date: August 17, 2023Applicant: Sony Group CorporationInventors: Yuta HASEGAWA, Masashi BANDO, Shintarou HIRATA, Hideaki MOGI, Iwao YAGI, Yasuharu UJIIE, Yuki NEGISHI
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Patent number: 11730004Abstract: A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.Type: GrantFiled: September 17, 2021Date of Patent: August 15, 2023Assignees: SONY GROUP CORPORATION, SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yohei Hirose, Iwao Yagi, Shintarou Hirata, Hideaki Mogi, Masashi Bando, Osamu Enoki
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Patent number: 11716896Abstract: There is provided a photoelectric conversion film including a quinacridone derivative represented by the following General formula and a subphthalocyanine derivative represented by the following General formula.Type: GrantFiled: April 28, 2021Date of Patent: August 1, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yoshiaki Obana, Yuki Negishi, Yuta Hasegawa, Ichiro Takemura, Osamu Enoki, Hideaki Mogi, Nobuyuki Matsuzawa
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Patent number: 11700733Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.Type: GrantFiled: June 3, 2021Date of Patent: July 11, 2023Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yuta Hasegawa, Nobuyuki Matsuzawa, Yoshiaki Obana, Ichiro Takemura, Norikazu Nakayama, Masami Shimokawa, Tetsuji Yamaguchi, Iwao Yagi, Hideaki Mogi
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Publication number: 20230194671Abstract: There are provided a light emitting device capable of suitably forming light from a plurality of light emitting elements and a distance measuring device. A light emitting device according to the present disclosure includes a substrate, a plurality of light emitting elements provided at a first surface of the substrate, and a plurality of lenses provided at a second surface of the substrate. The plurality of lenses includes a first lens other than a spherical lens and an ellipsoidal lens.Type: ApplicationFiled: April 22, 2021Publication date: June 22, 2023Inventors: Jun Iwashita, Hideaki Mogi, Masashi Nakamura
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Publication number: 20230134972Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.Type: ApplicationFiled: December 20, 2022Publication date: May 4, 2023Inventors: Yu KATO, Yuta INABA, Masato KANNO, Hideaki MOGI, Miki KIMIJIMA, Sae MIYAJI
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Publication number: 20230096300Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode 15a and a second electrode 18 facing each other; and a photoelectric conversion layer 17 provided between the first electrode 15a and the second electrode 18, and including a first quinacridone derivative represented by a formula (1).Type: ApplicationFiled: August 31, 2022Publication date: March 30, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yuta HASEGAWA, Hideaki MOGI, Takuya ITO
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Publication number: 20230054053Abstract: An image can be projected in a wide angular range while an increase in a beam diameter is suppressed. A light source device according to the present disclosure includes: a plurality of light emitting elements divided into a plurality of regions; and an optical unit that includes a plurality of first lens groups having a first focal length and corresponding to the regions of the light source unit on a one-to-one basis, and a second lens group having a second focal length and emitting light having passed through the first lens groups. In the optical unit, for each of the regions, the first focal length is smaller than zero, the second focal length is larger than zero, and each composite focal length of each of the first lens groups and the second lens group is larger than the second focal length.Type: ApplicationFiled: December 24, 2020Publication date: February 23, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Fumihiko HANZAWA, Masashi NAKAMURA, Hideaki MOGI, Go ASAYAMA
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Patent number: 11538863Abstract: [Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.Type: GrantFiled: September 7, 2018Date of Patent: December 27, 2022Assignees: Sony Corporation, Sony Semiconductor Solutions CorporationInventors: Yu Kato, Yuta Inaba, Masato Kanno, Hideaki Mogi, Miki Kimijima, Sae Miyaji
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Publication number: 20220367573Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).Type: ApplicationFiled: June 16, 2022Publication date: November 17, 2022Applicant: SONY GROUP CORPORATIONInventors: Masaki MURATA, Hideaki MOGI, Shintarou HIRATA, Iwao YAGI, Yasuharu UJIIE, Masashi BANDO, Raku SHIRASAWA, Hajime KOBAYASHI, Mitsunori NAKAMOTO, Yuichi TOKITA
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Patent number: 11495696Abstract: A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode 15a and a second electrode 18 facing each other; and a photoelectric conversion layer 17 provided between the first electrode 15a and the second electrode 18, and including a first quinacridone derivative represented by a formula (1).Type: GrantFiled: September 26, 2016Date of Patent: November 8, 2022Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Yuta Hasegawa, Hideaki Mogi, Takuya Ito
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Publication number: 20220285630Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.Type: ApplicationFiled: May 16, 2022Publication date: September 8, 2022Inventors: Yosuke SAITO, Ichiro TAKEMURA, Osamu ENOKI, Yuki NEGISHI, Yuta HASEGAWA, Hideaki MOGI, Yasuharu UJIIE
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Patent number: 11411051Abstract: An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1).Type: GrantFiled: December 12, 2019Date of Patent: August 9, 2022Assignee: SONY CORPORATIONInventors: Masaki Murata, Hideaki Mogi, Shintarou Hirata, Iwao Yagi, Yasuharu Ujiie, Masashi Bando, Raku Shirasawa, Hajime Kobayashi, Mitsunori Nakamoto, Yuichi Tokita
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Publication number: 20220165781Abstract: The present disclosure relates to a solid-state image sensor and an electronic apparatus that suppress a decrease in light collection efficiency and degradation in oblique light resistance and enable a reduction in the height of a solid-state image sensor.Type: ApplicationFiled: December 1, 2021Publication date: May 26, 2022Inventors: HIDEAKI MOGI, YOHEI HIROSE, SHINTAROU HIRATA, YUYA KUMAGAI, TETSUJI YAMAGUCHI, MASAKI MURATA, YASUHARU UJIIE
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Patent number: 11335861Abstract: A photoelectric conversion element uses organic materials and is provided with improved quantum efficiency and response rate. The organic photoelectric conversion element includes, in a photoelectric conversion layer, p-type molecules represented by Formula (1): in which A represents any one of oxygen, sulfur or selenium, any one of R1 to R4 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, the remainder of R1 to R4 each represent hydrogen, any one of R5 to R8 represents a substituted or unsubstituted aryl or heteroaryl having 4 to 30 carbon atoms, and the remainder of R5 to R8 each represent hydrogen.Type: GrantFiled: May 7, 2018Date of Patent: May 17, 2022Assignee: Sony CorporationInventors: Yosuke Saito, Ichiro Takemura, Osamu Enoki, Yuki Negishi, Yuta Hasegawa, Hideaki Mogi, Yasuharu Ujiie