Abstract: A method for fabricating a semiconductor device comprises the step of depositing an insulation film 32a with a first pressure set in a deposition chamber; the step of gradually decreasing the pressure in the deposition chamber to a second pressure which is lower than the first pressure; and the step of further depositing the insulation film 32b with the second pressure set in the deposition chamber. The insulation film is deposited with the first pressure a little lower than a second pressure set in a deposition chamber, and the insulation film is further deposited with the second pressure lower than the first pressure set in the deposition chamber. Furthermore, the insulation film is not deposited in the state where the pressure in the deposition chamber is extremely low, and an atmosphere in the deposition chamber is unstable. Thus, a semiconductor device having the insulation film with a sufficiently flat surface can be fabricating without using reflow process.

Abstract: A method for fabricating a semiconductor device comprises the step of depositing an insulation film 32a with a first pressure set in a deposition chamber; the step of gradually decreasing the pressure in the deposition chamber to a second pressure which is lower than the first pressure; and the step of further depositing the insulation film 32b with the second pressure set in the deposition chamber. The insulation film is deposited with the first pressure a little lower than a second pressure set in a deposition chamber, and the insulation film is further deposited with the second pressure lower than the first pressure set in the deposition chamber. Furthermore, the insulation film is not deposited in the state where the pressure in the deposition chamber is extremely low, and an atmosphere in the deposition chamber is unstable. Thus, a semiconductor device having the insulation film with a sufficiently flat surface can be fabricating without using reflow process.

Abstract: Disclosed is a process for producing a benzylamine derivative represented by the general formula (3): wherein X1, R1 and R2 are as defined below, which comprises reacting a benzyl derivative represented by the general formula (1): wherein X1 represents a halogen atom and R1 represents an acyl group, with a haloacyl compound represented by the general formula (2): R2—X2??(2) wherein X2 represents a halogen atom and R2 represents an acyl group, in the presence of Lewis acid. According to this method, a benzylamine derivative as an intermediate, which is useful for the preparation of a carbamate-based agricultural or horticultural bactericide, can be preferably prepared.

Abstract: A method for fabricating a semiconductor device comprises the step of depositing an insulation film 32a with a first pressure set in a deposition chamber; the step of gradually decreasing the pressure in the deposition chamber to a second pressure which is lower than the first pressure; and the step of further depositing the insulation film 32b with the second pressure set in the deposition chamber. The insulation film is deposited with the first pressure a little lower than a second pressure set in a deposition chamber, and the insulation film is further deposited with the second pressure lower than the first pressure set in the deposition chamber. Furthermore, the insulation film is not deposited in the state where the pressure in the deposition chamber is extremely low, and an atmosphere in the deposition chamber is unstable. Thus, a semiconductor device having the insulation film with a sufficiently flat surface can be fabricating without using reflow process.

Abstract: Gate length is 110 nm±15 nm or shorter (130 nm or shorter in a design rule) or an aspect ratio of an area between adjacent gate electrode structures thereof (ratio of the height of the gate electrode structure to the distance between the gate electrode structures) is 6 or higher. A PSG (HDP-PSG: Phospho Silicate Glass) film containing a conductive impurity is formed as an interlayer insulating film for burying the gate electrode structures at film-formation temperature of 650° C. or lower by a high-density plasma CVD (HDP-CVD) method.

Abstract: A colored refractory material for lining an instrument/apparatus used at a high temperature is formed by mixing a powder of a raw material containing ceramics with a coloring agent and kneading with a liquid using a binder. The refractory material is put in lining for a portion being in contact with a high temperature molten substance or being exposed to a high temperature atmosphere, and is dried by heating while adjusting a temperature and a heating time on the basis of color change on the surface of the refractory material.

Abstract: Bis(aminophenylthioalkyl)terephthalate having the formula ##STR1## wherein R represents a C.sub.1 -C.sub.3 alkyl group. The compounds are useful as hardeners for a polyurethane elastomer.

Abstract: A method for the preparation of polyurethane elastomers in which polyethyleneglycol-bis(4-aminobenzoate) is used as the curing agent to be admixed with the polyurethane formulations. This curing agent imparts considerably extended pot life to the ready-prepared polyurethane composition to be cured by heating into an elastomer having improved properties.

Abstract: 4-Chloro-3,5-diaminophenyl acetates having the formula ##STR1## wherein R represents an alkyl group are useful as curing agent for polyurethane elastomer and intermediates for pharmaceutical and agrochemical compounds and are produced by simultaneously nitrating hydrolyzing 4-chlorobenzylcyanide and esterifying the resulting 4-chloro-3,5-dinitrophenyl acetic acid and then reducing the resulting ester.

Abstract: 4-Alkoxy-3,5-diamino-.alpha.,.alpha.,.alpha.-trifluoromethylbenzene having the formula ##STR1## wherein R represents an alkyl group.

Abstract: A curing agent for polyurethane which has a melting point at most 110.degree. C and comprises a mixture of at least two compounds of the general formula: ##STR1## Wherein n is zero or a positive integer. This curing agent has a low solidifying point and good solubility in solvents and thus is excellent in workability. This curing agent is used for the production of polyurethane highly stabilized in quality.