Abstract: The invention has a function of preparing a data base for a relation between a defect shape and an arrangement for the optical system capable of detecting the shape at high sensitivity and automatically adjusting the arrangement for the optical system. As the method of preparing the data base, a method of using optical simulation or an experimental method of using a sample having an optical shape is applied. A pinhole position and a beam size are adjusted automatically so as to attain the optimal arrangement for the optical system to an inputted defect shape based on the data base.

Abstract: Applying an alternating current to a magnetic head as a sample generates an alternate-current magnetic field from the sample. A cantilever includes a probe that is made of a magnetic material or is coated with a magnetic material. The cantilever is displaced when it approaches the sample. Detecting the displacement of the cantilever detects distribution of the magnetic field from the sample. It is possible to fast measure distribution of the magnetic field generated from the sample when a frequency of the alternating current applied to the sample differs from a resonance frequency of the cantilever.

Abstract: In spectral detection for detecting the shape of repeating pattern structures uniformly formed on a surface of a test object, it is advantageous to use light having a wide wavelength range in a short wavelength region. However, it is not easy to realize a relatively simple optical system capable of spectral detection of light having a wide wavelength range in a short wavelength region, namely in ultraviolet region. The present invention provides an inspection apparatus for detecting pattern defects. The inspection apparatus includes a spectral detection optical system capable of spectral detection of light in a wavelength range from deep ultraviolet to near infrared. The spectral detection optical system includes a spatially partial mirror serving as a half mirror and a reflecting objective provided with an aperture stop for limiting the angle and direction of light to be applied to and reflected by a test object.

Abstract: This invention relates to a pattern shape inspection method and an apparatus thereof for conducting a first step of irradiating wideband illuminating light which contains far ultraviolet light to a sample from a perpendicular direction, inspecting a shape of the pattern based on a spectral waveform of reflecting light detected from the sample, and detecting an edge roughness of the pattern based on the spectral waveform of the reflecting light detected from the sample, and a second step of irradiating a laser beam to the sample from an oblique direction, and detecting the edge roughness of the pattern based on scattered light detected from the sample.

Abstract: An inspection region is specified using the design information to perform region division for measurement through a scatterometry method. The obtained detection data is classified by pattern into a periodic region and a non-periodic region. A spectroscopic characteristic is detected by an optical sensor to extract features. The extracted features are compared with features stored in a feature map database for each region to evaluate a state of a patterned medium.

Abstract: A defect generated during a nano-imprint process is inspected by a scatterometry method. The scatterometry method is to illuminate the surface of a medium with light having a plurality of wave lengths by means of a first illuminator through a half mirror and an objective lens and cause light reflected on the medium to be incident on a spectrometer through the objective lens and the half mirror. A second illuminator illuminates a foreign material or scratch on the surface of the medium from an oblique direction with respect to the surface of the medium. Light is scattered from the foreign material or scratch and detected by first and second detectors. The first detector is placed in a direction defining a first elevation angle with the surface of the medium. The second detector is placed in a direction defining a second elevation angle with the surface of the medium.

Abstract: An apparatus for inspecting a pattern shape of a magnetic record medium or its stamper includes: a moving mechanism, on which an object to be inspected where a pattern is formed is placed and which moves the object to be inspected in a radial direction while rotating the object; an irradiating optical system that applies illuminating light of a wide band including far ultraviolet light to the object to be inspected moved in the radial direction while rotating the object by the moving mechanism in a polarized state suitable for the object to be inspected from an oblique direction; a detecting optical system that detects zero-order reflected light generated from the object to be inspected irradiated by the irradiating optical system; and a shape inspection unit that inspects a pattern shape formed on the object to be inspected based on a spectral reflectance waveform obtained by dispersing the detected zero-order reflected light, thereby inspecting the pattern shape at a high speed and with high sensitivity.

Abstract: The present invention relates to an apparatus for detecting defects on a disk surface which projects light on the disk surface by a light transmitting system, receives specula reflection light and scattered light by a light receiving system, exposes defects by performing a two-dimensional frequency filter process on a signal, and performs a defect determination process to extract a linear-shaped isolative defect candidate. Next, the present invention performs a periodicity determination process to classify and detect the periodically generated linear and circular arc defects and the isolatively generated linear and circular arc defects.

Abstract: The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect).

Abstract: A method for manufacturing a plasma display comprises: a phosphor painting process for painting phosphor layer in ribs formed on a back plate; and a phosphor inspection process that includes the steps of: irradiating the phosphor layer with ultraviolet light; preparing an imaging system so that the imaging system images the emitted light beam to acquire information on brightness; comparing the brightness information with correlation between a shape model of the phosphor layer and brightness signal information that have been obtained in advance; and obtaining a painted state of the phosphor layer painted in the ribs; and a process for feeding back the applied state of the phosphor layer, which has been obtained in the phosphor inspection process, to the phosphor painting process so that the manufacturing equipment is controlled in the phosphor painting process.

Abstract: Making it possible to execute the detection of the particles floating inside a processing chamber with the use of an optical system including one observing window and one unit (An object of the present invention is, by using an optical system including one observing window and one unit, to make it possible to execute the detection of the particles floating inside a processing chamber.) Also, in order to be able to detect exceedingly feeble particle scattered-lights with a high-accuracy, when performing a desired thin-film forming or thin-film processing treatment toward a to-be-processed target inside the processing chamber, the following method is employed: First, the irradiation with a beam is executed into the processing chamber through the observing window.

Abstract: The present invention provides a bump shape measuring apparatus comprising an illumination optical system which illuminates bumps arranged on a board with illumination light of a low tilt angle to a surface of the board; a detection optical system where reflected light from the bumps is condensed for detection of image signals of the bumps by a high tilt angle to the surface of the board; an image processing unit where an outline of the tip and the base of each of the bumps is calculated based on the image signals of each of the bumps, and geometric characteristics including at least a position and height of each of the bumps are calculated based on the outline of the tip and the base of each of the bumps; and a main control unit where information on the calculated geometric characteristics of the bumps is displayed on a display unit.

Abstract: In order to realize individually and easily optimization of exposure conditions such as exposure dose and focus by photolithography in a production process of semiconductor devices, the present invention is such that: light is radiated onto a pattern on a semiconductor wafer; by an optical system that detects information on a pattern shape using scattered light by its reflection, waveforms of an FEM sample wafer having a plurality of shape deformation patterns prepared in advance are detected and stored; one or more characteristic points on a spectral waveform generated in association with a pattern change is recorded; and a variation model of the characteristic points is obtained. As to a pattern to be measured, a spectral waveform is detected in the same manner as that described above, and deviations (exposure dose deviation and focus deviation) of the formation conditions are estimated from a displacement of the characteristic points on the waveform using the variation model.

Abstract: In an exposure process or etching process, an image feature amount useful for estimating a cross-sectional shape of a target evaluation pattern, process conditions for the pattern, or device characteristics of the pattern is calculated from an SEM image. The image feature amount is compared with learning data that correlates data preliminarily stored in a database, which data includes cross-sectional shapes of patterns, process conditions for the patterns, or device characteristics of the patterns, to the image feature amount calculated from the SEM image. Thereby, the cross-sectional shape of the target evaluation pattern, the process conditions of the pattern, or the device characteristics of the pattern are nondestructively calculated.

Abstract: In order to realize individually and easily optimization of exposure conditions such as exposure dose and focus by photolithography in a production process of semiconductor devices, the present invention is such that: light is radiated onto a pattern on a semiconductor wafer; by an optical system that detects information on a pattern shape using scattered light by its reflection, waveforms of an FEM sample wafer having a plurality of shape deformation patterns prepared in advance are detected and stored; one or more characteristic points on a spectral waveform generated in association with a pattern change is recorded; and a variation model of the characteristic points is obtained. As to a pattern to be measured, a spectral waveform is detected in the same manner as that described above, and deviations (exposure dose deviation and focus deviation) of the formation conditions are estimated from a displacement of the characteristic points on the waveform using the variation model.

Abstract: A method for recording information on a rewritable recording medium includes recording synchronizing signal information in a synchronizing signal portion on the medium, recording data information in a data portion of the medium after the synchronizing signal portion by forming marks in the data portion, and substantially randomly inverting the marks and spaces between the marks each time the information is recorded. The marks for particular areas of the medium are different in a physical property from other areas of the medium and data information is recorded in association with both ends of each of the marks. Upon rewriting of at least the recorded synchronizing signal information, a length of the synchronizing signal portion changes and a start position of the synchronizing signal portion changes, and wherein a change of the synchronizing signal information start position is smaller than a change of the length of the synchronizing signal portion.

Abstract: In size measurement of a semiconductor device, profiles of a pattern formed in a resist process are determined through an exposure/development simulation in respect of individual different combinations of exposure values and focus values to form a profile matrix and scattered light intensity distributions corresponding to the individual profiles are determined through calculation to form a scattered light library, thereby forming a profile library consisting of the profile matrix and scattered light library. A scattered light intensity distribution of an actually measured pattern is compared with the scattered light intensity distributions of the scattered light library and a profile of profile matrix corresponding to a scattered light intensity distribution of scattered light library having the highest coincidence is determined as a three-dimensional shape of the actually measured pattern.

Abstract: A method for recording information on a rewritable recording medium includes recording first synchronizing signal information in a first synchronizing signal portion on the rewritable recording medium, recording second synchronizing signal information in a second synchronizing signal portion following the first synchronizing signal portion on the rewritable recording medium, recording data information in a data portion of the rewritable recording medium after the second synchronizing signal portion by forming marks in the data portion. The data information corresponds to both ends of each the marks. The marks and spaces between the marks are substantially randomly inverted each time the information is recorded and a length of the first synchronizing signal portion changes and a start position of the first synchronizing signal portion changes. A change of the start position of the first synchronizing signal portion is smaller than a change of the length of the first synchronizing signal portion.

Abstract: The present invention relates to a dimension measuring SEM system and a circuit pattern evaluating system capable of achieving accurate, minute OPC evaluation, the importance of which increase with the progressive miniaturization of design pattern of a circuit pattern for a semiconductor device, and a circuit pattern evaluating method. Design data and measured data on an image of a resist pattern formed by photolithography are superposed for the minute evaluation of differences between a design pattern defined by the design data and the image of the resist pattern, and one- or two-dimensional geometrical features representing differences between the design pattern and the resist pattern are calculated. In some cases, the shape of the resist pattern differs greatly from the design pattern due to OPE effect (optical proximity effect).

Abstract: A method for recording information on a rewritable recording medium includes recording synchronizing signal information in a synchronizing signal portion on the medium, recording data information in a data portion of the medium after the synchronizing signal portion by forming marks in the data portion, and substantially randomly inverting the marks and spaces between the marks each time the information is recorded. The marks for particular areas of the medium are different in a physical property from other areas of the medium and data information is recorded in association with both ends of each of the marks. Upon rewriting of at least the recorded synchronizing signal information, a length of the synchronizing signal portion changes and a start position of the synchronizing signal portion changes, and wherein a change of the synchronizing signal information start position is smaller than a change of the length of the synchronizing signal portion.