Abstract: A power system includes a voltage detection IC which outputs a reset signal to a microcomputer when an input voltage is equal to or lower than a reset release voltage, releases outputting of the reset signal when the input voltage exceeds the reset release voltage, and outputs the reset signal to the microcomputer again after the input voltage exceeds the reset release voltage when the input voltage is equal to or lower than a reset detection voltage which is lower than the reset release voltage and a voltage conversion circuit which sets a first voltage associated with a change of a power voltage as the input voltage before start of operation of the microcomputer and sets a second voltage which is associated with a change of the power voltage and is lower than the first voltage as the input voltage after the start of operation the microcomputer.

Abstract: Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.

Abstract: A substrate liquid processing apparatus includes a liquid processing unit configured to process a substrate by a processing liquid, and a controller. The controller processes the substrate in the liquid processing unit, and switches the processing liquid discharged from a discharge line, from a recycling line, to a waste line in which the processing liquid is discarded through the discharge line to the outside, according to a concentration of an elution component eluted from the substrate.

Abstract: A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.

Abstract: A learning means 71 learns, based on learning data containing the meaning of a column in a table and the meaning of the table, a model indicating regularity between the meaning of the column in the table and the meaning of the table. An estimation means 72 estimates the meaning of the table based on the meaning of a column of a table to be input and the model.

Abstract: An electronic device includes a first substrate, a wiring substrate (second substrate) disposed over the first substrate, and an enclosure (case) in which the first substrate and the wiring substrate are accommodated and that has a first side and a second side. A driver component (semiconductor component) is mounted on the wiring substrate. A gate electrode of a first semiconductor component is electrically connected to the driver component via a lead disposed on a side of the first side and a wiring disposed between the driver component and the first side. A gate electrode of a second semiconductor component is electrically connected to the driver component via a lead disposed on a side of the second side and a wiring disposed between the driver component and the second side.

Abstract: A substrate liquid processing apparatus includes a processing tub 34 which is configured to store therein a processing liquid and in which a processing of a substrate is performed by immersing the substrate in the stored processing liquid; a circulation line 50 connected to the processing tub; a pump 51 provided at the circulation line and configured to generate a flow of the processing liquid flowing out from the processing tub and returning back to the processing tub after passing through the circulation line; and a heater 52 provided at the circulation line and configured to heat the processing liquid. At least two temperature sensors 81 to 83 are provided at different positions within a circulation system including the processing tub and the circulation line. Controllers 90 and 100 control a heat generation amount of the heater based on detection temperatures of the at least two temperature sensors.

Abstract: The present invention pertains to the improvement of a miRNA inhibitor (a synthesized Tough Decoy (S-TuD)). The present invention provides a miRNA inhibitory complex including RNA or an analog thereof, wherein the RNA inhibitory complex includes at least one double-stranded structure and a miRNA binding sequence, each of two strands of the miRNA binding sequence being bound to two strands of at least one end of the double-stranded structure, and the miRNA inhibitory complex further includes at least one crosslinked nucleic acid.

Abstract: Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.

Abstract: A substrate liquid treatment method in one embodiment includes, storing a phosphoric acid solution in a processing bath provided in a liquid treatment unit, and immersing a substrate into the stored phosphoric acid solution to process the substrate, draining a phosphoric acid solution at a first drainage flow rate from the liquid treatment unit, and supplying a phosphoric acid solution to the liquid treatment unit, in a first time period in which the substrate is immersed in the phosphoric acid solution in the processing bath, and draining a phosphoric acid solution at a second drainage flow rate different from the first drainage flow rate, from the liquid treatment unit, and supplying a phosphoric acid solution to the liquid treatment unit, in a second time period in which the substrate is immersed in the phosphoric acid solution in the processing bath.

Abstract: An aluminum heat exchanger is made by disposing an inner fin in a closed space formed by overlapping edge portions of a formed single tube plate or a plurality of formed tube plates, and brazing a first joint obtained by overlapping the edge portions of the tube plate and a second joint obtained by causing the inner fin to abut against the tube plate, wherein an Al—Si-based brazing filler material is interposed at the first and second joints, and brazing is carried out in an inert gas atmosphere without using flux, wherein the inner fin is constituted of a brazing sheet obtained by cladding a core material of an aluminum alloy, on both surfaces thereof, with the Al—Si-based brazing filler material having a solidus temperature of 570° C. or lower, the solidus temperature being lower than a solidus temperature of the Al—Si-based brazing filler material interposed at the first joint.

Abstract: According to an embodiment, a communication device includes an acquirer and a determiner. The acquirer is configured to acquire a first history value for each of one or more applications that use an encryption key. The first history value indicates a history value of a volume of the encryption key used by the each of one or more applications. The determiner is configured to determine a volume of the encryption key to be assigned to the corresponding application, according to the first history value.

Abstract: Provided is an etching method including: an etching step of performing an etching processing using an etching liquid on a workpiece accommodated in an etching processing unit; and an interval step between the etching step on the workpiece and a next etching step on another workpiece. The etching step includes a first partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a first set amount, and supplying a new etching liquid into the etching processing unit by a second set amount, and the interval step includes a second partial replacement pattern including discharging the etching liquid in the etching processing unit provided for the etching processing by a third set amount, and supplying a new etching liquid into the etching processing unit by a fourth set amount.

Abstract: Provided are a sulfuric acid adding facility and an operation method therefor which enable an increase in the maximum capacity and the operation rate of a sulfuric acid supply pump provided in the sulfuric acid adding facility. In a sulfuric acid adding facility, sulfuric acid is added to an autoclave used in a leaching step of a high pressure acid leaching (HPAL) method for a nickel oxide ore. The sulfuric acid adding facility is provided with the same number (n+1) (n is an integer, at least 1) of each of the following: a plurality of sulfuric acid adding pipes for adding sulfuric acid into the autoclave; and a plurality of sulfuric acid supply pumps for supplying sulfuric acid to the sulfuric acid adding pipes. Each of the first through n+1th sulfuric acid supply pumps includes at least three diaphragms and discharge ports of the same number as that of the diaphragms.

Abstract: Disclosed is a substrate liquid processing apparatus including a processing liquid storage unit that stores a processing liquid; a processing liquid supply unit that supplies the processing liquid to the processing liquid storage unit; a processing liquid circulation unit that circulates the processing liquid inside the processing liquid storage unit; a processing liquid discharge unit that discharges the processing liquid; a concentration sensor that measures a concentration in the processing liquid; and a controller that controls the processing liquid supply unit.

Abstract: A swash plate compressor 100 includes a swash plate 111 that rotates with a drive shaft 110, a pair of shoes 137a and 137b placed to sandwich a portion of the swash plate 111 close to a periphery of the swash plate 111, and a piston 136 connected to the swash plate 111 via the pair of shoes 137a and 137b. The piston 136 reciprocates in a cylinder bore 101a as the swash plate 111 rotates due to the rotation of the drive shaft 110. In the swash plate compressor 100, a zinc phosphate film is formed on each portion of the piston 136 at which the corresponding shoe 137a, 137b is in sliding contact. This reduces occurrence of galling or seizing at the sliding contact portions between the piston 136 and the shoes 137a and 137b.

Abstract: A substrate liquid processing apparatus includes a liquid processing unit configured to process a substrate by a processing liquid, and a controller. The controller processes the substrate in the liquid processing unit, and switches the processing liquid discharged from a discharge line, from a recycling line, to a waste line in which the processing liquid is discarded through the discharge line to the outside, according to a concentration of an elution component eluted from the substrate.

Abstract: Disclosed is a substrate processing apparatus, a substrate processing method and a computer-readable medium capable of recovering an extended amount of discharged solution from a processing unit thereby reducing the amount of deionized water for the processing and the cost. The substrate processing apparatus includes, inter alia, a first and second discharge solution lines each connected to a downstream side of a discharge unit, and the discharged solution from each of the first and second discharge solution lines is independently delivered to the processing solution supply unit as a recovered solution. Also, the substrate processing apparatus includes a converting unit that converts flow of the discharged solution from the discharge unit either to the first discharge solution line or to the second discharge solution line. The processing solution supply unit selectively delivers the recovered solution from the first and second discharge solution lines to the processing unit.

Abstract: Provided are non-aggregating immunostimulatory oligonucleotides. The present invention also provides a delivery agent for an immunostimulatory-oligonucleotide nucleic acid medicine, said delivery agent including a nucleic acid that contains a phosphorothioated nucleotide. According to another aspect, the present invention further provides an oligonucleotide including a bioactive core, and a nucleic acid that contains a phosphorothioated nucleotide. The present invention yet further provides an immunostimulator including the bioactive core of a type A/D, type B/K, or type C immunostimulatory oligonucleotide.

Abstract: A power system includes a voltage detection IC which outputs a reset signal to a microcomputer when an input voltage is equal to or lower than a reset release voltage, releases outputting of the reset signal when the input voltage exceeds the reset release voltage, and outputs the reset signal to the microcomputer again after the input voltage exceeds the reset release voltage when the input voltage is equal to or lower than a reset detection voltage which is lower than the reset release voltage and a voltage conversion circuit which sets a first voltage associated with a change of a power voltage as the input voltage before start of operation of the microcomputer and sets a second voltage which is associated with a change of the power voltage and is lower than the first voltage as the input voltage after the start of operation the microcomputer.