Abstract: The present invention relates to a method for producing a radioactive zirconium-labeled complex that can realize a high labeling index in a reaction between a radioactive zirconium ion and a ligand compound. The production method of the present invention includes a step of reacting a radioactive zirconium ion with a ligand compound in a reaction solution containing water to coordinate the radioactive zirconium ion. This step is performed in a state where the pH of the reaction solution is in an acidic region. The reaction solution does not contain an organic solvent but contains a water-soluble organic compound having one or two sulfo groups or carboxy groups in its structure, separately from the ligand compound.

Abstract: The production method of a radioactive metal-labeled antibody of the present invention includes a step of conducting a click reaction of a radioactive metal complex and an antibody site-specifically modified with a peptide to produce a radioactive metal-labeled antibody. The click reaction is performed between a first atomic group of the radioactive metal complex and a second atomic group directly or indirectly linked to the peptide. The second atomic group is an atomic group containing an azide group, or an atomic group containing trans-cyclooctene.

Abstract: The object of the invention is to provide a double-sided circuit non-oxide-based ceramic substrate excellent in radiation property and low in cost, and a method for manufacturing the same. A double-sided circuit non-oxide-based ceramic substrate related to the present invention includes a high heat-conductive non-oxide-based ceramic substrate that includes a through hole, a holding layer that is formed on a wall surface of the through hole, and an electro-conductive metal section that is held inside the through hole by the holding layer and does not include an active metal. The double-sided circuit non-oxide-based ceramic substrate related to the present invention preferably includes electrodes (thin film electrodes) that shield end surfaces of the holding layer and end surfaces of the electro-conductive metal section which are exposed to front and back surfaces of the ceramic substrate.

Abstract: A single crystal silicon carbide substrate includes a substrate of a single crystal silicon carbide; a first wiring film and a second wiring film disposed on one side of the substrate and having therebetween an interstice which is formed continuously without being broken from a first end of the one side to a second end of the one side; and an insulating portion disposed in the interstice between the first wiring film and the second wiring film and including a surface texture of the one side exposed by removing using dry etching a surface contaminated layer which is contaminated by at least one of iron, aluminum, chromium, or nickel adhered thereto.

Abstract: A single crystal silicon carbide substrate includes a substrate of a single crystal silicon carbide; a first wiring film and a second wiring film disposed on one side of the substrate and having therebetween an interstice which is formed continuously without being broken from a first end of the one side to a second end of the one side; and an insulating portion disposed in the interstice between the first wiring film and the second wiring film and including a surface texture of the one side exposed by removing using dry etching a surface contaminated layer which is contaminated by at least one of iron, aluminum, chromium, or nickel adhered thereto.

Abstract: The object of the invention is to provide a double-sided circuit non-oxide-based ceramic substrate excellent in radiation property and low in cost, and a method for manufacturing the same. A double-sided circuit non-oxide-based ceramic substrate related to the present invention includes a high heat-conductive non-oxide-based ceramic substrate that includes a through hole, a holding layer that is formed on a wall surface of the through hole, and an electro-conductive metal section that is held inside the through hole by the holding layer and does not include an active metal. The double-sided circuit non-oxide-based ceramic substrate related to the present invention preferably includes electrodes (thin film electrodes) that shield end surfaces of the holding layer and end surfaces of the electro-conductive metal section which are exposed to front and back surfaces of the ceramic substrate.

Abstract: Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided. A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.

Abstract: The optical mounting package of the present invention is featured by mounting a silicon frame on an insulating substrate for mounting the optical element. The package of the present invention is also featured by that the frame mounted on the insulating substrate for mounting the optical element is made of silicon. A method of manufacturing the package of the present invention is featured by mounting the silicon wafer on the insulating substrate.

Abstract: To provide an electronic circuit board in which a conductive wire is excellently connected to a bonding pad formed directly on a polyimide film. The electronic circuit includes: a first layer metal pattern 3 formed on a substrate 1; a polyimide film 2 formed on the first layer metal pattern 3; and a second layer metal pattern formed on a surface of the polyimide film 2. A conductive bump 4 is formed on the surface of the second layer metal pattern 31 by ball-bonding to provide electrical connection with a semiconductor chip 7 bonded to the first layer metal pattern by die-bonding. The conductive bump 4 is electrically connected to an electrode 72 of the semiconductor chip 7 by wire bonding.

Abstract: Submounts for mounting optical devices which have an excellent heat radiating property and can be formed in a wafer state in batch are provided. A metallized electrode including optical device mounting parts and wiring parts is formed on a surface of a first substrate containing an insulating material as a main component, a through hole is formed in a glass substrate serving as a second substrate, the optical device mounting parts of the first substrate are aligned to be located inside the through hole of the second substrate, and the first substrate and the second substrate are joined together by use of a method such as anodic bonding.

Abstract: A submount for a light emitting diode and its manufacturing method, the submount including a reflector and having a compact size. The submount for the light emitting diode comprises a Si base substrate having input/output terminals formed on a front side thereof, and a Si reflector having a sloped through hole and a reflecting film formed at least on a slope defining the through hole. The Si reflector is mounted on the Si base substrate and is fixedly joined to the Si base substrate. The Si reflector and the Si base substrate are joined to each other by a thin film solder.

Abstract: A chip mounting substrate for bonding a semiconductor chip to a substrate, comprises a solder layer on the substrate, the solder layer being connectable to a semiconductor chip, wherein the solder layer comprises a layer including ?-phase crystal grains of an Au—Sn alloy at a surface of the solder layer. The solder layer comprising a layer including ?-phase crystal grains of an Au—Sn alloy is formed at a surface of the solder layer. On mounting a semiconductor chip on the substrate, the substrate and the solder layer are heated and an image of the solder layer is shot to perform an image evaluation to detect the timing of mounting the semiconductor chip on the solder layer of the substrate and a position of the chip.

Abstract: A chip mounting substrate for bonding a semiconductor chip to a substrate, comprises a solder layer on the substrate, the solder layer being connectable to a semiconductor chip, wherein the solder layer comprises a layer including ?-phase crystal grains of an Au—Sn alloy at a surface of the solder layer. The solder layer comprising a layer including ?-phase crystal grains of an Au—Sn alloy is formed at a surface of the solder layer. On mounting a semiconductor chip on the substrate, the substrate and the solder layer are heated and an image of the solder layer is shot to perform an image evaluation to detect the timing of mounting the semiconductor chip on the solder layer of the substrate and a position of the chip.

Abstract: A chip mounting substrate for bonding a semiconductor chip to a substrate, comprises a solder layer on the substrate, the solder layer being connectable to a semiconductor chip, wherein the solder layer comprises a layer including ?-phase crystal grains of an Au—Sn alloy at a surface of the solder layer. The solder layer comprising a layer including ?-phase crystal grains of an Au—Sn alloy is formed at a surface of the solder layer. On mounting a semiconductor chip on the substrate, the substrate and the solder layer are heated and an image of the solder layer is shot to perform an image evaluation to detect the timing of mounting the semiconductor chip on the solder layer of the substrate and a position of the chip.

Abstract: The optical mounting package of the present invention is featured by mounting a silicon frame on an insulating substrate for mounting the optical element. The package of the present invention is also featured by that the frame mounted on the insulating substrate for mounting the optical element is made of silicon. A method of manufacturing the package of the present invention is featured by mounting the silicon wafer on the insulating substrate.

Abstract: A submount for a light emitting diode and its manufacturing method, the submount including a reflector and having a compact size. The submount for the light emitting diode comprises a Si base substrate having input/output terminals formed on a front side thereof, and a Si reflector having a sloped through hole and a reflecting film formed at least on a slope defining the through hole. The Si reflector is mounted on the Si base substrate and is fixedly joined to the Si base substrate. The Si reflector and the Si base substrate are joined to each other by a thin film solder.

Abstract: A chip mounting substrate for bonding a semiconductor chip to a substrate, comprises a solder layer on the substrate, the solder layer being connectable to a semiconductor chip, wherein the solder layer comprises a layer including ?-phase crystal grains of an Au—Sn alloy at a surface of the solder layer. The solder layer comprising a layer including ?-phase crystal grains of an Au—Sn alloy is formed at a surface of the solder layer. On mounting a semiconductor chip on the substrate, the substrate and the solder layer are heated and an image of the solder layer is shot to perform an image evaluation to detect the timing of mounting the semiconductor chip on the solder layer of the substrate and a position of the chip.

Abstract: An optical element-mounting substrate that makes it easy to optically couple the optical semiconductor element to the optical fiber or to the lens and that can be highly integrated while suppressing deterioration in the high-frequency signals. The optical element-mounting substrate for optically coupling the optical semiconductor element to the optical fiber through the lens, comprises an insulating film formed on the surface of the optical element-mounting substrate, grooves formed on the substrate for installing the optical fiber and the lens, a thin-film electrode formed on the insulating film, a thin-film capacitor and a thin-film temperature sensor arranged maintaining a distance from the thin-film electrode, and a solder film formed on the insulating film in a region where the optical semiconductor element is mounted so as to be electrically connected to the thin-film electrode.

Abstract: The optical mounting package of the present invention is featured by mounting a silicon frame on an insulating substrate for mounting the optical element. The package of the present invention is also featured by that the frame mounted on the insulating substrate for mounting the optical element is made of silicon. A method of manufacturing the package of the present invention is featured by mounting the silicon wafer on the insulating substrate.

Abstract: An optical bench for mounting an optical element includes a silicon substrate, a first dielectric substrate and a second dielectric substrate which are arranged on the silicon substrate, on the first substrate, there are arranged mounting sections of a laser diode, a wiring, and a mounting section of the photodiode, and on the silicon substrate, there is arranged a mounting section of a lens or an optical fiber, obtaining an optical bench, which is not easily curved with temperature, for mounting an optical element.