Abstract: To manufacture a semiconductor device, a first heat treatment for curing a first adhesive material of a conductive paste type is performed, after a semiconductor chip is mounted on a die pad of a lead frame via the first adhesive material. After that, a metal plate is disposed on a pad of the semiconductor chip such that the metal plate faces the pad of the semiconductor chip via a second adhesive material of a conductive paste type, and a second heat treatment is performed for curing each of the first adhesive material and the second adhesive material. A time of the first heat treatment is less than a time of the second heat treatment. After the first adhesive material is cured by the first heat treatment, the first adhesive material is further cured by the second heat treatment.

Abstract: A semiconductor device manufacturing method which enhances the reliability of a semiconductor device. The method includes a step in which a source wire is connected with a semiconductor chip while jigs are pressed against a die pad. The jigs each have a first support portion with a first projection and a second support portion with a second projection. Using the jigs thus structured, the first projection is made to contact with a first point on the front surface of the die pad and then the second projection is made to contact with a second point on the front surface of the die pad located closer to a suspension lead than the first point.

Abstract: A semiconductor device manufacturing method which enhances the reliability of a semiconductor device. The method includes a step in which a source wire is connected with a semiconductor chip while jigs are pressed against a die pad. The jigs each have a first support portion with a first projection and a second support portion with a second projection. Using the jigs thus structured, the first projection is made to contact with a first point on the front surface of the die pad and then the second projection is made to contact with a second point on the front surface of the die pad located closer to a suspension lead than the first point.

Abstract: A semiconductor device manufacturing method which enhances the reliability of a semiconductor device. The method includes a step in which a source wire is connected with a semiconductor chip while jigs are pressed against a die pad. The jigs each have a first support portion with a first projection and a second support portion with a second projection. Using the jigs thus structured, the first projection is made to contact with a first point on the front surface of the die pad and then the second projection is made to contact with a second point on the front surface of the die pad located closer to a suspension lead than the first point.

Abstract: A semiconductor device manufacturing method which enhances the reliability of a semiconductor device. The method includes a step in which a source wire is connected with a semiconductor chip while jigs are pressed against a die pad. The jigs each have a first support portion with a first projection and a second support portion with a second projection. Using the jigs thus structured, the first projection is made to contact with a first point on the front surface of the die pad and then the second projection is made to contact with a second point on the front surface of the die pad located closer to a suspension lead than the first point.

Abstract: The bonding time of a metallic ribbon is shortened in the semiconductor device which connects a lead frame with the bonding pad of a semiconductor chip with a metallic ribbon. The bottom of the wedge tool is divided into two by the V-groove at the first branch and the second branch. In order to do bonding of the Al ribbon to the source pad of the silicon chip, and the source post of the lead frame, first, the first branch and second branch of the wedge tool are contacted by pressure to Al ribbon on the source pad, and supersonic vibration is applied to it. Subsequently, the first branch is contacted by pressure to Al ribbon on the source post, and supersonic vibration is applied to it. Here, since the width of the first branch is narrower than the width of the source post, Al ribbon is not joined at the end surface of the width direction of the source post.

Abstract: The bonding time of a metallic ribbon is shortened in the semiconductor device which connects a lead frame with the bonding pad of a semiconductor chip with a metallic ribbon. The bottom of the wedge tool is divided into two by the V-groove at the first branch and the second branch. In order to do bonding of the Al ribbon to the source pad of the silicon chip, and the source post of the lead frame, first, the first branch and second branch of the wedge tool are contacted by pressure to Al ribbon on the source pad, and supersonic vibration is applied to it. Subsequently, the first branch is contacted by pressure to Al ribbon on the source post, and supersonic vibration is applied to it. Here, since the width of the first branch is narrower than the width of the source post, Al ribbon is not joined at the end surface of the width direction of the source post.

Abstract: The bonding time of a metallic ribbon is shortened in the semiconductor device which connects a lead frame with the bonding pad of a semiconductor chip with a metallic ribbon. The bottom of the wedge tool is divided into two by the V-groove at the first branch and the second branch. In order to do bonding of the Al ribbon to the source pad of the silicon chip, and the source post of the lead frame, first, the first branch and second branch of the wedge tool are contacted by pressure to Al ribbon on the source pad, and supersonic vibration is applied to it. Subsequently, the first branch is contacted by pressure to Al ribbon on the source post, and supersonic vibration is applied to it. Here, since the width of the first branch is narrower than the width of the source post, Al ribbon is not joined at the end surface of the width direction of the source post.