Abstract: A shower head for plasma processing includes a body part having a first surface, a second surface opposite to the first surface, and a plurality of inner side surfaces. The plurality of inner side surfaces is configured to define a plurality of gas holes penetrating through the body part from the first surface to the second surface. The second surface is made of a first corrosion-resistant material.

Abstract: A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.

Abstract: An evacuation method used for a vacuum processing apparatus including a vacuum processing chamber is provided. The vacuum processing chamber is evacuated by an exhaust device for a first predetermined period of time by opening a valve connecting the exhaust device with the vacuum processing chamber. A pressure in the vacuum processing chamber is urged to increase by closing the valve and leaving the valve closed for a second predetermined period of time after evacuating the vacuum processing chamber. Evacuating the vacuum processing chamber and urging the pressure in the vacuum processing chamber to increase are performed so as to reduce the pressure in the vacuum processing chamber to a pressure between 6.7 Pa and 13.3×102 Pa (between 5 Torr and 10 Torr) without freezing moisture in the vacuum processing chamber.

Abstract: A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.

Abstract: An evacuation method used for a vacuum processing apparatus including a vacuum processing chamber is provided. The vacuum processing chamber is evacuated by an exhaust device for a first predetermined period of time by opening a valve connecting the exhaust device with the vacuum processing chamber. A pressure in the vacuum processing chamber is urged to increase by closing the valve and leaving the valve closed for a second predetermined period of time after evacuating the vacuum processing chamber. Evacuating the vacuum processing chamber and urging the pressure in the vacuum processing chamber to increase are performed so as to reduce the pressure in the vacuum processing chamber to a pressure between 6.7 Pa and 13.3×102 Pa (between 5 Torr and 10 Torr) without freezing moisture in the vacuum processing chamber.

Abstract: A Ti-containing remaining in a chamber of a plasma processing apparatus can be simply and efficiently removed. In a Low-k film etching process, immediately after a dry etching process (process S2) is finished, a dry cleaning process is performed in the presence of a wafer while the wafer is held on an electrostatic chuck 40 (process S3). The dry cleaning process (process S3) is performed to mainly remove the Ti-containing reactant remaining in the chamber 10. To this end, a cleaning gas containing a H2 gas and a N2 gas is introduced into the chamber 10 from a processing gas supply unit 70 at a preset flow rate ratio. Then, a first high frequency power HF for plasma generation is applied to a susceptor 12 at a preset power level, so that plasma is generated within the chamber 10 by the high frequency discharge of the cleaning gas.

Abstract: A particle backflow preventing part, which is disposed inside of an evacuation pipe connecting a process chamber and an evacuation device, includes a first plate part, and a second plate part that has an opening and is spaced from the first plate part by a first gap and positioned closer to the evacuation device than the first plate part. The opening is covered by the first plate part in plan view.

Abstract: An evacuation method which can reduce evacuation time without causing moisture-related problems. In a vacuum processing apparatus including a vacuum processing chamber, during the evacuation for the vacuum processing chamber, the pressure in the vacuum processing chamber is maintained at a pressure lower than or equal to the atmospheric pressure but higher than or equal to 6.7×102 Pa (5 Torr).

Abstract: A foreign material detecting method for detecting a foreign material attached to a substrate surface includes a spraying step of spraying an organic solvent or an oil-phase material containing a halogen element to the substrate surface, a condensing step of emphasizing the foreign material by condensing the sprayed organic solvent or oil-phase material around the foreign material attached to the substrate surface by controlling a temperature of the substrate surface, and a surface inspecting step of detecting the foreign material emphasized by the condensation of the organic solvent or the oil-phase material by a surface inspecting device.

Abstract: A foreign material detecting method for detecting a foreign material attached to a substrate surface includes a spraying step of spraying an organic solvent or an oil-phase material containing a halogen element to the substrate surface, a condensing step of emphasizing the foreign material by condensing the sprayed organic solvent or oil-phase material around the foreign material attached to the substrate surface by controlling a temperature of the substrate surface, and a surface inspecting step of detecting the foreign material emphasized by the condensation of the organic solvent or the oil-phase material by a surface inspecting device.

Abstract: An evacuation method which can reduce evacuation time without causing moisture-related problems. In a vacuum processing apparatus including a vacuum processing chamber, during the evacuation for the vacuum processing chamber, the pressure in the vacuum processing chamber is maintained at a pressure lower than or equal to the atmospheric pressure but higher than or equal to 6.7×102 Pa (5 Torr).