Abstract: A terahertz device includes a terahertz element, a sealing resin, a wiring layer and a frame-shaped member. The terahertz element that performs conversion between terahertz waves and electric energy. The terahertz element has an element front surface and an element back surface spaced apart from each other in a first direction. The sealing resin covers the terahertz element. The wiring layer is electrically connected to the terahertz element. A frame-shaped member is made of a conductive material and arranged around the terahertz element as viewed in the first direction. The frame-shaped member has a reflective surface capable of reflecting the terahertz waves.

Abstract: An object of the disclosure is to provide a semiconductor device having enhanced adhesion of the electrode while improving the reverse direction breakdown voltage, which is especially useful for power devices. A semiconductor device including a semiconductor layer and an electrode layer provided on the semiconductor layer and including at least a first electrode layer and a second electrode layer provided on the first electrode layer, wherein an outer edge portion of the second electrode layer is located outside an outer edge portion of the first electrode layer, wherein the semiconductor layer includes an electric field relaxation region with a different electrical resistivity from that of the semiconductor layer, and wherein the electric field relaxation region overlaps at least a part of a portion of the second electrode layer located outside the outer edge portion of the first electrode layer in plan view.

Abstract: Terahertz device includes first resin layer, columnar conductor, wiring layer, terahertz element, second resin layer, and external electrode. Resin layer includes first resin layer obverse face and first resin layer reverse face. Columnar conductor includes first conductor obverse face and first conductor reverse face, penetrating first resin layer in z-direction. Wiring layer spans between first resin layer obverse face and first conductor obverse face. Terahertz element includes element obverse face and element reverse face, and converts between terahertz wave and electric energy. Second resin layer includes second resin layer obverse face and second resin layer reverse face, and covers wiring layer and terahertz element. External electrode, disposed offset in a direction first resin layer reverse face faces with respect to first resin layer, is electrically connected to columnar conductor. Terahertz element is conductively bonded to wiring layer.

Abstract: A terminal includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer that is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

Abstract: Provided is a semiconductor element including at least, a semiconductor layer including a crystalline oxide semiconductor as a major component; an electrode layer laminated on the semiconductor layer; and a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.

Abstract: There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a plurality of resistance elements connected respectively to the PN junction diodes in parallel and connected to each other in series; and a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel.

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel; and a die pad on which at least one of the PN junction diodes and the Schottky barrier diode are mounted commonly.

Abstract: Provided is a power conversion device converting power and supplying the converted power to a load, the power conversion device including: a power conversion circuit connected to the load and configured to supply/receive the power; a coil configured to detect a current passing through the power conversion circuit and to output a voltage corresponding to the detected current; an integration circuit configured to integrate the voltage output from the coil to generate a voltage signal corresponding to a variation of the current; and a control device configured to generate a control signal to the power conversion circuit based on the voltage signal output from the integration circuit.

Abstract: Provided is a semiconductor device, including: a first electrode layer including a first wiring member and a second electrode layer including a second wiring member, the first electrode layer and the second electrode layer being disposed to face each other; a semiconductor element disposed in a gap between the first and second electrode layers, and electrically connected to the first and second electrode layers; and a via disposed in the gap between the first and second electrode layers, electrically connected to the first and second electrode layers, and configured to detect a state of the semiconductor element by being fractured at a predetermined temperature and losing electric connection.

Abstract: A semiconductor device includes a substrate, a wire portion, a bonding portion, a semiconductor element, and an encapsulation resin. The substrate includes substrate main and back surfaces facing in opposite directions. The wire portion includes a conductive layer formed on the substrate main surface. The bonding portion includes a first plated layer formed on an upper surface of the wire portion and a first solder layer formed on an upper surface of the first plated layer. The semiconductor element includes an element main surface facing the substrate main surface, an element electrode formed on the element main surface, and a second plated layer formed on a lower surface of the element electrode and bonded to the first solder layer. The encapsulation resin covers the semiconductor element. The bonding portion is larger than the element electrode as viewed in a thickness-wise direction that is perpendicular to the substrate main surface.

Abstract: The present disclosure provides an electronic device. The electronic device includes a first resin layer, having a first resin layer main surface and a first resin layer inner surface; a first conductor, having a first conductor main surface and a first conductor inner surface; a first wiring layer, formed adjacent to the first resin layer main surface and connected to the first conductor main surface; a first electronic component, electrically connected with the first wiring layer; a second resin layer, having a second resin layer main surface facing same direction as the first resin layer main surface and a second resin layer inner surface being in contact with the first resin layer main surface; an external electrode; and a second conductor, penetrating the second resin layer, wherein the second conductor is disposed on a periphery of the first electronic component.

Abstract: There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

Abstract: Terahertz device A1 includes first resin layer 21, columnar conductor 31, wiring layer 32, terahertz element 11, second resin layer 22, and external electrode 40. Resin layer 21 includes first resin layer obverse face 211 and first resin layer reverse face 212. Columnar conductor 31 includes first conductor obverse face 311 and first conductor reverse face 312, penetrating first resin layer 21 in z-direction. Wiring layer 32 spans between first resin layer obverse face 221 and first conductor obverse face 311. Terahertz element 11 includes element obverse face 111 and element reverse face 112, and converts between terahertz wave and electric energy. Second resin layer 22 includes second resin layer obverse face 221 and second resin layer reverse face 222, and covers wiring layer 32 and terahertz element 11. External electrode 40, disposed offset in a direction first resin layer reverse face 222 faces with respect to first resin layer 32, is electrically connected to columnar conductor 31.

Abstract: An electronic device includes: a first resin layer having a first resin layer main surface and a first resin layer inner surface; a columnar conductor having a columnar conductor main surface and a columnar conductor inner surface and penetrating the first resin layer in direction z; a wiring layer connecting the first resin layer main surface and the first conductor main surface; an electronic component being electrically connected and joined to the wiring layer; a second resin layer having a second resin layer main surface facing the same direction as the first resin layer main surface and a second resin layer inner surface being in contact with the first resin layer main surface, covering the wiring layer and the electronic component; and an external electrode closer to the side where the first resin layer inner surface faces than the first resin layer and is electrically connected to the columnar conductor.

Abstract: There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

Abstract: Terahertz device includes first resin layer, columnar conductor, wiring layer, terahertz element, second resin layer, and external electrode. Resin layer includes first resin layer obverse face and first resin layer reverse face. Columnar conductor includes first conductor obverse face and first conductor reverse face, penetrating first resin layer in z-direction. Wiring layer spans between first resin layer obverse face and first conductor obverse face. The terahertz element includes element obverse face and element reverse face, and converts between terahertz wave and electric energy. Second resin layer includes second resin layer obverse face and second resin layer reverse face, and covers wiring layer and terahertz element. External electrode, disposed offset in a direction first resin layer reverse face faces with respect to first resin layer, is electrically connected to columnar conductor.

Abstract: An object of the disclosure is to provide a semiconductor device having enhanced adhesion of the electrode while improving the reverse direction breakdown voltage, which is especially useful for power devices. A semiconductor device including a semiconductor layer and an electrode layer provided on the semiconductor layer and including at least a first electrode layer and a second electrode layer provided on the first electrode layer, wherein an outer edge portion of the second electrode layer is located outside an outer edge portion of the first electrode layer, wherein the semiconductor layer includes an electric field relaxation region with a different electrical resistivity from that of the semiconductor layer, and wherein the electric field relaxation region overlaps at least a part of a portion of the second electrode layer located outside the outer edge portion of the first electrode layer in plan view.

Abstract: A semiconductor device includes: a substrate including a main surface; a wiring portion including a first conductive layer formed on the main surface, and a first plating layer which is provided on the first conductive layer and on which an oxide film is formed; a semiconductor element including an element mounting surface and an element electrode formed on the element mounting surface; a bonding portion including a second plating layer made of the same material as the first plating layer and laminated on the first conductive layer, and a solder layer laminated on the second plating layer and bonded to the element electrode; and a sealing resin covering the semiconductor element.

Abstract: Terahertz device A1 includes first resin layer 21, columnar conductor 31, wiring layer 32, terahertz element 11, second resin layer 22, and external electrode 40. Resin layer 21 includes first resin layer obverse face 211 and first resin layer reverse face 212. Columnar conductor 31 includes first conductor obverse face 311 and first conductor reverse face 312, penetrating first resin layer 21 in z-direction. Wiring layer 32 spans between first resin layer obverse face 221 and first conductor obverse face 311. Terahertz element 11 includes element obverse face 111 and element reverse face 112, and converts between terahertz wave and electric energy. Second resin layer 22 includes second resin layer obverse face 221 and second resin layer reverse face 222, and covers wiring layer 32 and terahertz element 11. External electrode 40, disposed offset in a direction first resin layer reverse face 222 faces with respect to first resin layer 32, is electrically connected to columnar conductor 31.