Patents by Inventor Hidefumi Matsui
Hidefumi Matsui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230357931Abstract: A parameter selection method for causing a computer to execute processing steps including: (a) acquiring a plurality of parameters in measurement data of a plurality of sensors regarding a process in a substrate processing apparatus and result data of the process corresponding to the measurement data; (b) classifying the acquired parameters into a plurality of groups by a specific clustering method; (c) selecting parameters having a large effect on the result data based on a threshold value for each of the plurality of groups; (d) repeating the step of (c) in a tournament format between the groups for the parameters selected for each of the groups; and (e) selecting parameters highly correlated with the result data by correlation analysis between the parameters selected in the step of (d).Type: ApplicationFiled: August 23, 2021Publication date: November 9, 2023Inventor: Hidefumi MATSUI
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Publication number: 20230115637Abstract: Provided are a process estimation system and a process data estimation method for appropriately estimating process data, and a program. The process estimation system includes: an input part configured to input actual sensor data detected by a sensor of a substrate processing apparatus; a virtual sensor data generation part configured to generate virtual sensor data for a virtual sensor based on the actual sensor data and a physical model; and a process data estimation part configured to estimate process data based on the virtual sensor data.Type: ApplicationFiled: January 27, 2021Publication date: April 13, 2023Inventors: Naoshige FUSHIMI, Hidefumi MATSUI
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Publication number: 20230085325Abstract: A substrate processing apparatus includes: an imaging portion configured to acquire a surface image of a film formed on a surface of a substrate; an optical property estimation portion configured to estimate an optical property of the film based on process information acquired during formation of the film; and a film thickness estimation portion configured to estimate a film thickness of the film based on the surface image and an estimation result of the optical property.Type: ApplicationFiled: September 6, 2022Publication date: March 16, 2023Inventors: Hirokazu KYOKANE, Hidefumi MATSUI, Toshiyuki FUKUMOTO, Satoshi ITOH, Masashi IMANAKA, Toyohisa TSURUDA, Masashi ENOMOTO, Masahiro YANAGISAWA
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Publication number: 20230062662Abstract: A measurement system including an imaging device and a plasma processing device having a plasma generator configured to generate plasma from a gas supplied into a processing chamber and a controller. The imaging device is configured to generate optical information of the plasma from image data of imaged plasma in the processing chamber, and the controller is configured to convert the generated optical information of the plasma into a plasma parameter that determines physical characteristics of the plasma with reference to a storage that stores correlation information between the optical information of the plasma and measurement results of the plasma parameter.Type: ApplicationFiled: January 29, 2021Publication date: March 2, 2023Inventors: Ayuta SUZUKI, Hidefumi MATSUI, Atsushi KUBO
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Publication number: 20200126829Abstract: There is provided a maintenance control method of controlling a processing device including determining whether a temperature of a component part of the processing device that processes a substrate changes at least 5° C. or a preset temperature is changed by at least 5° C., determining whether at least a predetermined number of a first vibration is included in vibration data detected by a vibration sensor provided in the processing device in response to a timing when the temperature of the component part of the processing device that processes the substrate is determined to change at least 5° C. or the preset temperature is determined to be changed by at least 5° C.Type: ApplicationFiled: April 10, 2017Publication date: April 23, 2020Inventors: Hidefumi MATSUI, Yudo SUGAWARA, Hiroshi NAGAIKE, Yasutoshi UMEHARA
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Patent number: 9209010Abstract: A substrate cleaning method includes removing a foreign material attached to a substrate while preventing deterioration of the substrate and any film formed on or above the substrate. A cleaning gas at a pressure between 0.3 MPa and 2.0 MPa is sprayed towards a wafer W with attached foreign material 22 placed in a near-vacuum, producing clusters 21 made up of a multitude of gas molecules 20, and the clusters 21 collide with the wafer W without undergoing ionization.Type: GrantFiled: February 3, 2011Date of Patent: December 8, 2015Assignees: TOKYO ELECTRON LIMITED, IWATANI CORPORATIONInventors: Hidefumi Matsui, Tsuyoshi Moriya, Masaki Narushima
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Patent number: 8945313Abstract: A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member.Type: GrantFiled: November 30, 2012Date of Patent: February 3, 2015Assignee: Tokyo Electron LimitedInventors: Hidefumi Matsui, Tsuyoshi Moriya, Nobuyuki Nagayama
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Patent number: 8940638Abstract: In a substrate wiring method, copper is embedded all the way to the lowest parts of a wiring pattern formed on a substrate. The method is used to wire a substrate in a processing chamber kept in a vacuum state, the substrate having a wiring pattern formed thereon. The method includes a preprocessing step in which the wiring pattern on the substrate is cleaned using a desired cleaning gas and an embedding step in which, after the preprocessing step, metal nanoparticles are embedded in the wiring pattern using a clustered metal gas.Type: GrantFiled: February 23, 2011Date of Patent: January 27, 2015Assignees: Tokyo Electron Limited, Iwatani CorporationInventors: Satohiko Hoshino, Hidefumi Matsui, Masaki Narushima
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Patent number: 8585831Abstract: There is provided a substrate cleaning method capable of cleaning a substrate on which a fine pattern is being formed in a short time with a simple configuration without having a harmful influence on the fine pattern. In the method, the substrate is transferred from a processing chamber for performing a process on the surface of the substrate therein to a cleaning chamber for cleaning the substrate therein. The substrate is cooled to a temperature in the cleaning chamber. A superfluid is supplied to the surface of the substrate, and contaminant components in the fine pattern are flowed out along with the superfluid as the superfluid flows over from the surface of the substrate.Type: GrantFiled: March 10, 2010Date of Patent: November 19, 2013Assignee: Tokyo Electron LimitedInventors: Hidefumi Matsui, Tsuyoshi Moriya, Eiichi Nishimura, Shinichi Kawaguchi, Jun Yamawaku, Kunio Miyauchi
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Patent number: 8475602Abstract: A substrate cleaning method for cleaning and removing foreign materials adhered to a surface of a substrate includes heating the substrate to peel off the foreign materials from the surface of the substrate by a thermal stress, removing the foreign materials from the surface of the substrate by a temperature gradient created in a proximity of the surface of the substrate, and collecting the foreign materials removed from the surface of the substrate by a collecting unit facing the substrate.Type: GrantFiled: October 23, 2009Date of Patent: July 2, 2013Assignee: Toyko Electron LimitedInventors: Hidefumi Matsui, Tsuyoshi Moriya
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Publication number: 20130056033Abstract: A substrate cleaning method includes removing a foreign material attached to a substrate while preventing deterioration of the substrate and any film formed on or above the substrate. A cleaning gas at a pressure between 0.3 MPa and 2.0 MPa is sprayed towards a wafer W with attached foreign material 22 placed in a near-vacuum, producing clusters 21 made up of a multitude of gas molecules 20, and the clusters 21 collide with the wafer W without undergoing ionization.Type: ApplicationFiled: February 3, 2011Publication date: March 7, 2013Applicants: Iwatani Corporation, Tokyo Electron LimitedInventors: Hidefumi Matsui, Tsuyoshi Moriya, Masaki Narushima
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Publication number: 20130056024Abstract: A substrate cleaning method for cleaning a substrate on which a film is formed with a pattern in a vacuum-state processing chamber includes a preprocessing step where the film formed on the substrate on which the pattern has been formed by an etching process is cleaned by using a cleaning gas; and a consecutive step including an oxidation step where residues attached on a surface of the pattern are oxidized by using an oxidizing gas and a reduction step where the oxidized residues are reduced by using a reducing gas, which are consecutively carried out posterior to the preprocessing step. The gases used in the preprocessing step and the consecutive step are clustered by ejecting the gases into the processing chamber from a gas nozzle whose internal pressure PS is maintained to be higher than an internal pressure PO of the processing chamber.Type: ApplicationFiled: February 23, 2011Publication date: March 7, 2013Applicants: IWATANI CORPORATION, TOKYO ELECTRON LIMITEDInventors: Satohiko Hoshino, Hidefumi Matsui, Masaki Narushima
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Publication number: 20130040459Abstract: In a substrate wiring method, copper is embedded all the way to the lowest parts of a wiring pattern formed on a substrate. The method is used to wire a substrate in a processing chamber kept in a vacuum state, the substrate having a wiring pattern formed thereon. The method includes a preprocessing step in which the wiring pattern on the substrate is cleaned using a desired cleaning gas and an embedding step in which, after the preprocessing step, metal nanoparticles are embedded in the wiring pattern using a clustered metal gas.Type: ApplicationFiled: February 23, 2011Publication date: February 14, 2013Applicants: Iwatani Corporation, Tokyo Electron LimitedInventors: Satohiko Hoshino, Hidefumi Matsui, Masaki Narushima
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Publication number: 20120031434Abstract: There is provided a substrate cleaning method capable of cleaning a substrate on which a fine pattern is being formed in a short time with a simple configuration without having a harmful influence on the fine pattern. In the method, the substrate is transferred from a processing chamber for performing a process on the surface of the substrate therein to a cleaning chamber for cleaning the substrate therein. The substrate is cooled to a temperature in the cleaning chamber. A superfluid is supplied to the surface of the substrate, and contaminant components in the fine pattern are flowed out along with the superfluid as the superfluid flows over from the surface of the substrate.Type: ApplicationFiled: March 10, 2010Publication date: February 9, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Hidefumi Matsui, Tsuyoshi Moriya, Eiichi Nishimura, Shinichi Kawaguchi, Jun Yamawaku, Kunio Miyauchi
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Publication number: 20100101608Abstract: A substrate cleaning method for cleaning and removing foreign materials adhered to a surface of a substrate includes heating the substrate to peel off the foreign materials from the surface of the substrate by a thermal stress, removing the foreign materials from the surface of the substrate by a temperature gradient created in a proximity of the surface of the substrate, and collecting the foreign materials removed from the surface of the substrate by a collecting unit facing the substrate.Type: ApplicationFiled: October 23, 2009Publication date: April 29, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Hidefumi MATSUI, Tsuyoshi Moriya
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Publication number: 20100104760Abstract: A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member.Type: ApplicationFiled: October 27, 2009Publication date: April 29, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Hidefumi MATSUI, Tsuyoshi Moriya, Nobuyuki Nagayama
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Patent number: 7401988Abstract: On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.Type: GrantFiled: February 9, 2007Date of Patent: July 22, 2008Assignee: Tokyo Electron LimitedInventors: Takayuki Katano, Hidefumi Matsui, Junichi Kitano, Yo Suzuki, Masami Yamashita, Toru Aoyama, Hiroyuki Iwaki, Satoru Shimura
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Publication number: 20070127916Abstract: On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.Type: ApplicationFiled: February 9, 2007Publication date: June 7, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Junichi Kitano, Yuji Matsuyama, Takahiro Kitano, Takayuki Katano, Hidefumi Matsui, Yo Suzuki, Masami Yamashita, Toru Aoyama, Hiroyuki Iwaki, Satoru Shimura, Masatoshi Deguchi, Kousuke Yoshihara, Naruaki Iida
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Patent number: 7208066Abstract: On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.Type: GrantFiled: August 28, 2003Date of Patent: April 24, 2007Assignee: Tokyo Electron LimitedInventors: Junichi Kitano, Yuji Matsuyama, Takahiro Kitano, Takayuki Katano, Hidefumi Matsui, Yo Suzuki, Masami Yamashita, Toru Aoyama, Hiroyuki Iwaki, Satoru Shimura, Masatoshi Deguchi, Kousuke Yoshihara, Naruaki Iida
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Publication number: 20050130445Abstract: The wafer coated with the resist is deliberately placed in the vapor before being transferred to an aligner that exposes the resist on the wafer, the vapor, for example, the moisture, uniformly adheres onto the resist on the wafer. As a result, the substrate can uniformly be exposed in the following exposing process, and the uniformity of the line width and the like can be improved.Type: ApplicationFiled: January 26, 2005Publication date: June 16, 2005Applicant: TOKYO ELECTRON LIMITEDInventors: Hidefumi Matsui, Junichi Kitano