Patents by Inventor Hidefumi Nakata

Hidefumi Nakata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6746912
    Abstract: A downsized, high-capacity MIM capacitor provided on a compound semiconductor includes a lower electrode comprising a plurality of metal layers including a top layer, an upper electrode, and a dielectric layer positioned between the lower electrode and the upper electrode. The entire surface of the top metal layer is oxidized to form an insulating metal oxide layer.
    Type: Grant
    Filed: March 10, 2003
    Date of Patent: June 8, 2004
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Hidefumi Nakata
  • Publication number: 20040087082
    Abstract: A downsized, high-capacity MIM capacitor provided on a compound semiconductor includes a lower electrode comprising a plurality of metal layers including a top metal layer, an upper electrode, and a dielectric layer positioned between the lower electrode and the upper electrode. The entire surface of the top metal layer is oxidized to form an insulating metal oxide layer.
    Type: Application
    Filed: March 10, 2003
    Publication date: May 6, 2004
    Applicant: Murata Manufacturing Co.,Ltd.
    Inventor: Hidefumi Nakata
  • Publication number: 20020179952
    Abstract: A downsized, high-capacity MIM capacitor provided on a compound semiconductor includes a lower electrode comprising a plurality of metal layers including a top metal layer, an upper electrode, and a dielectric layer positioned between the lower electrode and the upper electrode. The entire surface of the top metal layer is oxidized to form an insulating metal oxide layer.
    Type: Application
    Filed: November 21, 2001
    Publication date: December 5, 2002
    Applicant: Murata Manufacturing Co., Ltd
    Inventor: Hidefumi Nakata
  • Patent number: 4600833
    Abstract: A solid state image sensing device comprises a photosensitive semiconductor element having a plurality of photocells on a surface thereof. A protective layer is disposed on the photosensitive semiconductor element, and an inorganic layer is disposed on the protective layer. A plurality of color filter layers each comprising a coloring agent having a color absorption characteristic are mixed into a portion of the inorganic layer in locations overlying the photocell, and a surface protective coating is disposed on a surface of the color filter layers.
    Type: Grant
    Filed: March 15, 1983
    Date of Patent: July 15, 1986
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Hiroshi Shibata, Hiroyasu Toyoda, Hidefumi Nakata