Patents by Inventor Hideharu Ieki

Hideharu Ieki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6800135
    Abstract: A ZnO/sapphire substrate includes an R-plane sapphire substrate whose (0 1-1 2) planes are parallel to the surface thereof and a ZnO epitaxial film formed on the R-plane sapphire substrate. The (1 1-2 0) planes of the ZnO epitaxial film are disposed with an interplanar spacing in the range of about 1.623 to 1.627 Å parallel to the (0 1-1 2) planes of the R-plane sapphire substrate.
    Type: Grant
    Filed: June 17, 2002
    Date of Patent: October 5, 2004
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Jun Koike, Hideharu Ieki
  • Patent number: 6731046
    Abstract: An inexpensive surface acoustic wave apparatus uses a flip chip bonding technique and is capable of reducing an ohmic loss by reducing an electrode electrical resistance and also operates at a high-frequency range. A surface acoustic wave apparatus has a surface acoustic wave element bonded to a package by using a bonding flip chip technique. In the surface acoustic wave element, on a piezoelectric substrate, an IDT electrode, bus bar electrodes, reflector electrodes, relay electrodes, and electrode pads are disposed. Conductive films are disposed on the electrode pads and define a first metallic film, and the conductive films are also disposed on at least any of the bus bar electrodes and the relay electrodes to define a second metallic film.
    Type: Grant
    Filed: July 5, 2002
    Date of Patent: May 4, 2004
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hiroki Watanabe, Hideharu Ieki
  • Publication number: 20030025422
    Abstract: An inexpensive surface acoustic wave apparatus uses a flip chip bonding technique and is capable of reducing an ohmic loss by reducing an electrode electrical resistance and also operates at a high-frequency range. A surface acoustic wave apparatus has a surface acoustic wave element bonded to a package by using a bonding flip chip technique. In the surface acoustic wave element, on a piezoelectric substrate, an IDT electrode, bus bar electrodes, reflector electrodes, relay electrodes, and electrode pads are disposed. Conductive films are disposed on the electrode pads and define a first metallic film, and the conductive films are also disposed on at least any of the bus bar electrodes and the relay electrodes to define a second metallic film.
    Type: Application
    Filed: July 5, 2002
    Publication date: February 6, 2003
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Hiroki Watanabe, Hideharu Ieki
  • Publication number: 20030005878
    Abstract: A ZnO/sapphire substrate includes an R-plane sapphire substrate whose (0 1 -1 2) planes are parallel to the surface thereof and a ZnO epitaxial film formed on the R-plane sapphire substrate. The (1 1 -2 0) planes of the ZnO epitaxial film are disposed with an interplanar spacing in the range of about 1.623 to 1.627 Å parallel to the (0 1 -1 2) planes of the R-plane sapphire substrate.
    Type: Application
    Filed: June 17, 2002
    Publication date: January 9, 2003
    Inventors: Jun Koike, Hideharu Ieki
  • Patent number: 5770985
    Abstract: A surface acoustic wave (SAW) filter includes a plurality of interdigital transducers located on a piezoelectric substrate along a surface wave propagation direction, at least a single one-port SAW resonator being connected in parallel with an output side of the SAW filter, while the resonance frequency (f.sub.0) of the SAW resonator is set in frequency region level which is lower than the pass band of the SAW filter.
    Type: Grant
    Filed: June 27, 1996
    Date of Patent: June 23, 1998
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Tadamasa Ushiroku, Hideharu Ieki
  • Patent number: 5694096
    Abstract: A surface acoustic wave (SAW) filter includes a plurality of interdigital transducers located on a piezoelectric substrate along a surface wave propagation direction, at least a single one-port SAW resonator connected in series with an output side of the SAW filter, while the resonance frequency of the SAW resonator is set at a level which is higher than the passband of the SAW filter.
    Type: Grant
    Filed: June 3, 1996
    Date of Patent: December 2, 1997
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Tadamasa Ushiroku, Hideharu Ieki
  • Patent number: 5569548
    Abstract: When a zinc oxide piezoelectric crystal film is epitaxially grown on an R-plane sapphire substrate by sputtering, a target containing not more than 4.5 percent by weight of Cu with respect to the total content of Zn and Cu is employed so that the zinc oxide piezoelectric film contains Cu. Thus, it is possible to obtain a zinc oxide piezoelectric crystal film having excellent orientation.
    Type: Grant
    Filed: August 2, 1994
    Date of Patent: October 29, 1996
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Jun Koike, Hideharu Ieki
  • Patent number: 5568002
    Abstract: An IIDT type surface acoustic wave filter (41) comprising a piezoelectric substrate and at least three IDTs (44 to 46) which are arranged on a surface of the piezoelectric substrate along the direction of surface wave propagation, the IDT (44) being inverted in phase with respect to the other IDT (46) while these IDTs (44) and (46) are connected in series to each other through the ground potential, thereby balancing inputs or outputs.
    Type: Grant
    Filed: October 10, 1995
    Date of Patent: October 22, 1996
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Takaharu Kawakatsu, Yutaka Tada, Hideharu Ieki
  • Patent number: 5532537
    Abstract: When a zinc oxide piezoelectric crystal film is epitaxially grown on an R-plane sapphire substrate by sputtering, a target containing not more than 4.5 percent by weight of Cu with respect to the total content of Zn and Cu is employed so that the zinc oxide piezoelectric film contains Cu. Thus, it is possible to obtain a zinc oxide piezoelectric crystal film having excellent orientation.
    Type: Grant
    Filed: March 22, 1995
    Date of Patent: July 2, 1996
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Jun Koike, Hideharu Ieki
  • Patent number: 5432397
    Abstract: Disclosed herein is a zinc oxide piezoelectric crystal film which is grown on an R-plane sapphire substrate to orient its c-axis in parallel with the substrate surface. In order to improve orientation of the zinc oxide piezoelectric crystal film used is a Zn target for forming the zinc oxide piezoelectric crystal film by sputtering contains not more than 5 percent by weight of nickel or not more than 4.5 percent by weight of iron with respect to Zn.
    Type: Grant
    Filed: January 13, 1994
    Date of Patent: July 11, 1995
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Jun Koike, Hideharu Ieki
  • Patent number: 5162690
    Abstract: Interdigital transducers (3, 4) and reflectors (5, 6) are formed on a piezoelectric substrate (2) by an aluminum film. The aluminum film is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum film is suppressed.
    Type: Grant
    Filed: April 12, 1990
    Date of Patent: November 10, 1992
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hideharu Ieki, Atsushi Sakurai, Koji Kimura
  • Patent number: 5152864
    Abstract: Interdigital transducers and reflectors are formed on a piezoelectric substrate from an aluminum film. The aluminum film is formed by electron beam deposition at a film forming rate which is controlled to be at least 20 .ANG. per second. The aluminum film formed in this way is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum film is suppressed.
    Type: Grant
    Filed: July 18, 1991
    Date of Patent: October 6, 1992
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hideharu Ieki, Atsushi Sakurai, Koji Kimura
  • Patent number: 5061870
    Abstract: A surface accoustic wave device includes a substrate which is made up of single-crystalline dielectric member and a piezoelectric thin film epitaxially grown thereon. An aluminum electrode defining an interdigital electrode is formed along the interface between the dielectric member and the piezoelectric thin film. This aluminum electrode is formed of an aluminum film which is crystallographically oriented in a constant direction, whereby stressmigration of the aluminum electrode is suppressed, while enabling epitaxial growth of the piezoelectric thin film over the entire surface insert.
    Type: Grant
    Filed: July 6, 1990
    Date of Patent: October 29, 1991
    Assignee: Murata Mfg. Co., Ltd.
    Inventors: Hideharu Ieki, Atsushi Sakurai, Koji Kimura
  • Patent number: 4752709
    Abstract: A surface acoustic wave device comprising a surface acoustic wave substrate member composed by forming an aluminum oxide film and a thin zinc oxide film successively on a glass substrate. The thickness h.sub.1 of the aluminum oxide film and the thickness h.sub.2 of the zinc oxide film are set within ranges of 0.1.ltoreq.h.sub.1 /.lambda..ltoreq.10 and 0.05.ltoreq.h.sub.2 /.lambda..ltoreq.0.35 (where .lambda. is representative of wavelength of Sezawa wave) respectively, thereby to utilize Sezawa wave or a similar mode wave transmitted on the surface acoustic wave substrate member in multi-layer structure.
    Type: Grant
    Filed: January 29, 1987
    Date of Patent: June 21, 1988
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Satoru Fujishima, Hideharu Ieki
  • Patent number: 4571519
    Abstract: A surface acoustic wave device comprising a surface acoustic wave substrate member composed by forming an aluminum nitride film and a thin zinc oxide film successively on a glass substrate. The thickness h.sub.1 of the aluminum nitride film and the thickness h.sub.2 of the zinc oxide film are set within ranges of 0.1.ltoreq.h.sub.1 /.lambda..ltoreq.10 and 0.05.ltoreq.h.sub.2 /.lambda..ltoreq.0.3 (where .lambda. is representative of wavelength of Sezawa wave) respectively, thereby to utilize Sezawa wave or a similar mode wave transmitted on the surface acoustic wave substrate member in multi-layer structure.
    Type: Grant
    Filed: November 30, 1984
    Date of Patent: February 18, 1986
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Akira Kawabata, Tadashi Shiosaki, Fumio Takeda, Satoru Fujishima, Hideharu Ieki
  • Patent number: 4354129
    Abstract: A surface acoustic wave device includes a piezoelectric substrate, transmitting and receiving transducers provided on the surface of the substrate for propagating acoustic waves between the transducers, and absorbers provided between an end of the substrate and respective transducers for absorbing unwanted acoustic waves. The shape of the absorber is in relation to the energy distribution of the acoustic waves.
    Type: Grant
    Filed: April 16, 1980
    Date of Patent: October 12, 1982
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Hideharu Ieki
  • Patent number: 4297660
    Abstract: A surface acoustic wave device comprises an input and output transducers. A signal is supplied from a signal input circuit to the input transducer and a surface wave corresponding to the input signal is propagated from the input transducer to the output transducer, from which an electrical signal corresponding to the surface wave is withdrawn and is applied to a signal output circuit. An impedance converting circuit is inserted in series between the signal input circuit and the input transducer and/or between the output transducer and the signal output circuit. It has been discovered that this arrangement reduces the electrical triple transit echo.
    Type: Grant
    Filed: December 7, 1979
    Date of Patent: October 27, 1981
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hideharu Ieki, Seiichi Arai
  • Patent number: 4295108
    Abstract: A filter circuit comprises a surface acoustic wave device including input and output transducers. A tuning coil is interposed in series between an input terminal and the input transducer and/or between an output terminal and the output transducer. A piezoelectric resonator is connected in parallel with the tuning coil. The resonance frequency of the piezoelectric resonator is selected to be approximately equal to the frequency where an attenuation pole appears. The tuning coil and a capacitance component of the piezoelectric resonator and a clamp capacitance of the transducer constitute a tuning circuit, which is tuned to a given frequency in the passband.
    Type: Grant
    Filed: September 17, 1980
    Date of Patent: October 13, 1981
    Assignee: Murata Manufacturing Co., Ltd.
    Inventor: Hideharu Ieki
  • Patent number: 4143343
    Abstract: An acoustic surface wave interaction device includes a plate of dielectric material provided with two transducers each having at least one pair of comb-shaped electrode arrays having a plurality of teeth. The teeth in one comb-shaped electrode array of each pair are interleaved with the teeth of the other comb-shaped electrode array. At least one transducer has the pair of comb-shaped electrode arrays divided into two or more pairs of comb-shaped electrode arrays which are electrically connected in series, while the length of teeth is varied so that the tip ends thereof are enveloped by a curve representing the inverse Fourier transform of the transfer function of the device. The number of pairs of interleaving teeth to be included in one divided pair of electrode arrays is determined by the length of interleaving of the teeth in order to provide each divided pair of electrode arrays with the same impedance.
    Type: Grant
    Filed: August 30, 1977
    Date of Patent: March 6, 1979
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Atushi Inoue, Hideharu Ieki
  • Patent number: 4038615
    Abstract: An elastic surface wave device comprises a substrate of dielectric material, a thin layer of piezoelectric material, a plurality of electrodes and a thin layer of dielectric material. The piezoelectric layer is spaced from the electrodes with the thin dielectric layer formed therebetween and is so arranged as to facilitate the employment of a known photo-etching method to form the electrodes.
    Type: Grant
    Filed: March 4, 1976
    Date of Patent: July 26, 1977
    Assignee: Murata Manufacturing Co., Ltd.
    Inventors: Hideki Ishiyama, Atushi Inoue, Hideharu Ieki