Abstract: A substrate cleaning device and a substrate cleaning method reduces liquid drops remaining on a substrate to prevent the irregular heating of the substrate by a heating process due to liquid drops or water marks remaining on the substrate. A cleaning liquid is poured through a cleaning liquid pouring nozzle onto the surface of a substrate such that a region onto which the cleaning liquid is poured moves from a central part toward the circumference of the substrate. A gas is jetted radially outward at a region on the surface of the substrate behind a region onto which the cleaning liquid is poured with respect to the rotating direction of the substrate. The gas forces a liquid film of the cleaning liquid flowing on the surface of the substrate to flow in a circumferential direction and a radially outward direction.

Abstract: A heat processing device that bakes a substrate having a resist coating film containing a volatile substance, includes a hot plate 2, a hot plate temperature control unit 3, a box member 1a, 5, 32 that defines a heat space 30 and a fluid space 31, air supply unit 18, 18A and suction unit 10, 10A that create an air current flowing in a horizontal direction in the fluid space 31, and a controller 22, 22A that controls the hot plate temperature control unit 3, the air supply unit 18, 18A, suction unit 10, 10A and the gas temperature control unit 19 so that a relationship of TF<TH?TS?TP is satisfied where TP represents a temperature of the hot plate, TS represents an upper surface temperature of the substrate W, TH represents a temperature of the heat space and TF represents a temperature of the fluid space.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: A solution-receiving plate having solution-passing holes for passing a developer solution therethrough toward the back side of the plate is provided. Respective surfaces of the solution-receiving plate and a substrate are at the same height, and the solution-receiving plate is placed on the front-end side of the substrate and separated slightly from the front end of the substrate. A supply nozzle is moved to apply a developer solution. Accordingly, when the developer solution extended continuously between the perimeter of the substrate and the supply nozzle is severed, the severed developer solution is prevented from returning to the developer solution already spread over the substrate and thus flow and waves are prevented from occurring in the developer solution spread on the surface of the substrate. A resist pattern with a highly uniform line width is thus produced.

Abstract: A solution-receiving plate having solution-passing holes for passing a developer solution therethrough toward the back side of the plate is provided. Respective surfaces of the solution-receiving plate and a substrate are at the same height, and the solution-receiving plate is placed on the front-end side of the substrate and separated slightly from the front end of the substrate. A supply nozzle is moved to apply a developer solution. Accordingly, when the developer solution extended continuously between the perimeter of the substrate and the supply nozzle is severed, the severed developer solution is prevented from returning to the developer solution already spread over the substrate and thus flow and waves are prevented from occurring in the developer solution spread on the surface of the substrate. A resist pattern with a highly uniform line width is thus produced.

Abstract: In a developing processing of a wafer having a resist film low in the dissolving rate in a developing solution formed thereon and subjected to an exposure treatment, a developing solution of a low concentration is supplied first onto a wafer and the wafer is left to stand for a prescribed time to permit a developing reaction to proceed, followed by further supplying a developing solution having a concentration higher than that of the developing solution supplied first onto the wafer, leaving the substrate to stand and subsequently rinsing the wafer, thereby improving the uniformity of the line width in the central portion and the peripheral portion of the wafer.

Abstract: The present invention is a method of supplying a developing solution to an entire face of a substrate to perform a developing treatment, including the steps of: moving a developing solution supply nozzle at a predetermined speed at least from one end to another end of the substrate while the developing solution is being supplied; measuring an amplitude of a wave on a solution face of the developing solution supplied on the substrate after the supply of the developing solution; and changing the predetermined speed of the developing solution supply nozzle based on a measured value. Accordingly, it is unnecessary to measure a line width or the like which is finally formed on the substrate before correction as in the conventional art, and thus the correction can be made earlier as compared with the conventional case, resulting in a reduced number of defective items and improved yield.

Abstract: The present invention is a method of supplying a developing solution to an entire face of a substrate to perform a developing treatment, including the steps of: moving a developing solution supply nozzle at a predetermined speed at least from one end to another end of the substrate while the developing solution is being supplied; measuring an amplitude of a wave on a solution face of the developing solution supplied on the substrate after the supply of the developing solution; and changing the predetermined speed of the developing solution supply nozzle based on a measured value. Accordingly, it is unnecessary to measure a line width or the like which is finally formed on the substrate before correction as in the conventional art, and thus the correction can be made earlier as compared with the conventional case, resulting in a reduced number of defective items and improved yield.