Patents by Inventor Hideharu Nakajima
Hideharu Nakajima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7462879Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.Type: GrantFiled: March 23, 2005Date of Patent: December 9, 2008Assignee: Sony CorporationInventors: Toyoharu Oohata, Hideharu Nakajima, Yoshiyuki Yanagisawa, Toshiaki Iwafuchi
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Patent number: 7365358Abstract: A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.Type: GrantFiled: April 21, 2004Date of Patent: April 29, 2008Assignee: Sony CorporationInventors: Junichi Sato, Setsuo Usui, Yasuhiro Sakamoto, Yoshifumi Mori, Hideharu Nakajima
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Patent number: 7297566Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.Type: GrantFiled: April 11, 2005Date of Patent: November 20, 2007Assignee: Sony CorporationInventors: Toyoharu Oohata, Hideharu Nakajima, Yoshiyuki Yanagisawa, Toshiaki Iwafuchi
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Patent number: 7297985Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.Type: GrantFiled: May 15, 2002Date of Patent: November 20, 2007Assignee: Sony CorporationInventors: Toyoharu Oohata, Hideharu Nakajima, Yoshiyuki Yanagisawa, Toshiaki Iwafuchi
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Patent number: 7250314Abstract: Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.Type: GrantFiled: March 30, 2005Date of Patent: July 31, 2007Assignee: Sony CorporationInventors: Hideharu Nakajima, Masato Doi
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Patent number: 7091525Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.Type: GrantFiled: April 11, 2005Date of Patent: August 15, 2006Assignee: Sony CorporationInventors: Toyoharu Oohata, Hideharu Nakajima, Yoshiyuki Yanagisawa, Toshiaki Iwafuchi
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Patent number: 7060542Abstract: Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.Type: GrantFiled: September 1, 2004Date of Patent: June 13, 2006Assignee: Sony CorporationInventors: Hideharu Nakajima, Masato Doi
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Publication number: 20050179043Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.Type: ApplicationFiled: April 11, 2005Publication date: August 18, 2005Inventors: Toyoharu Oohata, Hideharu Nakajima, Yoshiyuki Yanagisawa, Toshiaki Iwafuchi
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Publication number: 20050179044Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.Type: ApplicationFiled: April 11, 2005Publication date: August 18, 2005Inventors: Toyoharu Oohata, Hideharu Nakajima, Yoshiyuki Yanagisawa, Toshiaki Iwafuchi
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Publication number: 20050174023Abstract: Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.Type: ApplicationFiled: March 30, 2005Publication date: August 11, 2005Inventors: Hideharu Nakajima, Masato Doi
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Publication number: 20050161686Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.Type: ApplicationFiled: March 23, 2005Publication date: July 28, 2005Inventors: Toyoharu Oohata, Hideharu Nakajima, Yoshiyuki Yanagisawa, Toshiaki Iwafuchi
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Publication number: 20050104125Abstract: A method of fabricating a single crystal thin film includes forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.Type: ApplicationFiled: April 21, 2004Publication date: May 19, 2005Inventors: Junichi Sato, Setsuo Usui, Yasuhiro Sakamoto, Yoshifumi Mori, Hideharu Nakajima
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Publication number: 20050032259Abstract: Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.Type: ApplicationFiled: September 1, 2004Publication date: February 10, 2005Inventors: Hideharu Nakajima, Masato Doi
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Patent number: 6825499Abstract: Disclosed are a display system and a method of producing the same. In the present invention, a hexagonal pyramid shaped GaN semiconductor light-emitting device selectively crystal-grown is fixed on an upper surface of a substrate by embedding it in an insulation layer formed of an epoxy resin. Then the insulation layer is selectively dry etched in an oxygen plasma atmosphere to expose an upper end portion of the GaN semiconductor light-emitting device. A conductor film is formed on the entire surface, and a required portion of the conductor film is left as a lead-out electrode while the unrequired portion is removed by lithography.Type: GrantFiled: February 7, 2002Date of Patent: November 30, 2004Assignee: Sony CorporationInventors: Hideharu Nakajima, Masato Doi
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Patent number: 6773943Abstract: A display unit having a sufficient luminance and a method of fabricating the display unit are provided. The display unit includes micro-sized semiconductor light emitting devices fixedly arrayed on a plane of a base body of the display unit at intervals. Micro-sized GaN based semiconductor light emitting devices formed by selective growth are each buried in a first insulating layer made from an epoxy resin except an upper end portion and a lower end surface thereof, and electrodes of each of the light emitting devices are extracted. These light emitting devices are fixedly arrayed on the upper plane of the base body at intervals. A second insulating layer made from an epoxy resin is formed on the plane of the base body so as to cover the semiconductor light emitting devices each of which has been buried in the first insulating layer.Type: GrantFiled: March 12, 2003Date of Patent: August 10, 2004Assignee: Sony CorporationInventors: Toyoharu Oohata, Hideharu Nakajima, Yoshiyuki Yanagisawa, Toshiaki Iwafuchi
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Patent number: 6746942Abstract: A method of fabricating a single crystal thin film includes: forming a non-single crystal thin film on an insulating base; subjecting the non-single crystal thin film to a first heat-treatment, thereby forming a polycrystalline thin film in which polycrystalline grains are aligned in an approximately regular pattern; and subjecting the polycrystalline thin film to a second heat-treatment, thereby forming a single crystal thin film in which the polycrystalline grains are bonded to each other. In this method, either the first heat-treatment or the second heat-treatment may be performed by irradiation of laser beams, preferably, emitted from an excimer laser. A single crystal thin film formed by this fabrication method has a performance higher than a related art polycrystalline thin film and is suitable for fabricating a device having stable characteristics. The single crystal thin film can be fabricated for a short-time by using laser irradiation as the heat-treatments.Type: GrantFiled: September 5, 2001Date of Patent: June 8, 2004Assignee: Sony CorporationInventors: Junichi Sato, Setsuo Usui, Yasuhiro Sakamoto, Yoshifumi Mori, Hideharu Nakajima
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Patent number: 6628347Abstract: An optical writing type liquid crystal light valve apparatus is composed so as to have at least first and second transparent substates, a photoconductive layer, first and second electrodes which are arranged so as to contract with and sandwich the photoconductive layer or arranged on one surface of the photoconductive layer, an optical reflective layer, a liquid crystal layer and a third electrode. The second electrode is composed of split electrode sections obtained by splitting the second electrode into a plurality of electrode sections. Opposing areas, which face each other via the photoconductive layer, of the photoconductive layer which the first electrode and the split electrode sections of the second electrode are set to be smaller than an area of the split electrode section of the second electrode.Type: GrantFiled: July 26, 1999Date of Patent: September 30, 2003Assignee: Sony CorporationInventors: Toyoharu Oohata, Hideharu Nakajima
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Publication number: 20030157741Abstract: An inexpensive display unit having a sufficient luminance and a method of fabricating the display unit are disposed, wherein micro-sized semiconductor light emitting devices are fixedly arrayed on a plane of a base body of the display unit at intervals. Micro-sized GaN based semiconductor light emitting devices (11) formed by selective growth are each buried in a first insulating layer (21) made from an epoxy resin except an upper end portion and a lower end surface thereof, and electrodes (18) and (19) of each of the light emitting devices (11) are extracted. These light emitting devices (11) are fixedly arrayed on the upper plane of the base body (31) at intervals.Type: ApplicationFiled: March 12, 2003Publication date: August 21, 2003Inventors: Toyoharu Oohata, Hideharu Nakajima, Yoshiyuki Yanagisawa, Toshiaki Iwafuchi
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Publication number: 20030148566Abstract: A method of manufacturing a flat panel display capable of manufacturing and preparing TFT of a pixel part and TFT of a scanning part with high reliability, comprising the steps of forming an amorphous silicon thin film on a substrate comprising a pixel part and a drive part, removing hydrogen from the amorphous silicon thin film formed in the drive part by irradiating a laser beam while without irradiating the amorphous silicon thin film formed in the pixel part, and crystallizing the amorphous silicon thin film formed in the drive part by irradiating a laser beam further, thereby changing the amorphous silicon thin film into a polycrystalline silicon thin film.Type: ApplicationFiled: April 1, 2003Publication date: August 7, 2003Inventors: Takashi Noguchi, Setsuo Usui, Hideharu Nakajima
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Publication number: 20020171090Abstract: A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by two-dimensionally arraying such light emitting devices on a base body. Since the display device is modularized by burying a light emitting device finely formed in an insulating material, to re-shape the light emitting device into a size easy to handle, it is possible to suppress the production cost of the display unit using such display devices, and to ensure a desirable handling performance of the light emitting device; for example, facilitate the carrying of the light emitting device or the mounting thereof on a base body.Type: ApplicationFiled: May 15, 2002Publication date: November 21, 2002Inventors: Toyoharu Oohata, Hideharu Nakajima, Yoshiyuki Yanagisawa, Toshiaki Iwafuchi