Abstract: The present invention includes: a position detection unit (55) detecting positions of semiconductor chips and storing each detected position in a position database (56); a position correction unit (57) outputting a corrected bonding position; and a bonding control unit (58) performing bonding of the semiconductor chips based on the corrected bonding position input from the position correction unit (57). The position correction unit (57) calculates position shift amounts between the semiconductor chips of respective stages and an accumulated position shift amount, and when the accumulated position shift amount is greater than or equal to a predetermined threshold value, corrects the position of the semiconductor chip by the accumulated position shift amount and outputs it as the corrected bonding position, and the bonding control unit (58) performs bonding of the semiconductor chip of the next stage at the corrected bonding position input from the position correction unit.

Abstract: A sintered electrode in a discharge tube comprises a sintered compact body and a cesium compound layer deposited on the sintered compact body. The sintered compact body comprises a gas getter such as titanium in the range of 5 to 50% by weight of the body, an additive for sintering such as silicon oxide in the range 0.1 to 1.0% by weight of the body and the remainder formed by a high melting point metal such as tantalum.

Abstract: A nitrogen-emitting composition which is adapted to be used with flash getter materials. Said composition comprising iron, germanium, and nitrogen. These materials are used within cathode ray tubes to produce a getter film which is deposited on the inner walls of the cathode ray tube.

Abstract: A mercury emitting structure with an annular receptacle having a groove at the upper end, in which a face-centered cubic lattice type intermetallic compound consisting mainly of yttrium, nickel and mercury is filled.